Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction
Abstract
A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.
- Inventors:
- Publication Date:
- Research Org.:
- Beijing Apollo Ding Rong Solar Technology Co., Ltd., Beijing (China); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Univ. of Illinois at Urbana-Champaign, IL (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1600169
- Patent Number(s):
- 10,446,706
- Application Number:
- 15/153,478
- Assignee:
- Beijing Apollo Ding Rong Solar Technology Co., Ltd. (Beijing, CN); Lawrence Livermore National Security, LLC (Livermore, CA); The Board of Trustees of the University of Illinois (Urbana, IL)
- DOE Contract Number:
- CPS 25853
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 05/12/2016
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Mackie, Neil M., Zapalac, Jr., Geordie H., Zhang, Weijie, Corson, John F., He, Xiaoqing, Rockett, Angus A., Varley, Joel, and Lordi, Vincenzo. Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction. United States: N. p., 2019.
Web.
Mackie, Neil M., Zapalac, Jr., Geordie H., Zhang, Weijie, Corson, John F., He, Xiaoqing, Rockett, Angus A., Varley, Joel, & Lordi, Vincenzo. Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction. United States.
Mackie, Neil M., Zapalac, Jr., Geordie H., Zhang, Weijie, Corson, John F., He, Xiaoqing, Rockett, Angus A., Varley, Joel, and Lordi, Vincenzo. 2019.
"Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction". United States. https://www.osti.gov/servlets/purl/1600169.
@article{osti_1600169,
title = {Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction},
author = {Mackie, Neil M. and Zapalac, Jr., Geordie H. and Zhang, Weijie and Corson, John F. and He, Xiaoqing and Rockett, Angus A. and Varley, Joel and Lordi, Vincenzo},
abstractNote = {A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.},
doi = {},
url = {https://www.osti.gov/biblio/1600169},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 15 00:00:00 EDT 2019},
month = {Tue Oct 15 00:00:00 EDT 2019}
}
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