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Title: Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices

Abstract

Techniques for forming an ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices. In one aspect, a method for forming a photovoltaic device includes the steps of: depositing a refractory electrode material onto a substrate; depositing a contact material onto the refractory electrode material, wherein the contact material includes a transition metal oxide; forming an absorber layer on the contact material, wherein the absorber layer includes Ag, Zn, Sn, and at least one of S and Se; annealing the absorber layer; forming a buffer layer on the absorber layer; and forming a top electrode on the buffer layer. The refractory electrode material may be Mo, W, Pt, Ti, TiN, FTO, and combinations thereof. The transition metal oxide may be TiO2, ZnO, SnO, ZnSnO, Ga2O3, and combinations thereof. A photovoltaic device is also provided.

Inventors:
; ; ;
Publication Date:
Research Org.:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1600168
Patent Number(s):
10,446,704
Application Number:
14/984,512
Assignee:
International Business Machines Corporation (Armonk, NY)
DOE Contract Number:  
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 12/30/2015
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; 42 ENGINEERING

Citation Formats

Gershon, Talia S., Gunawan, Oki, Haight, Richard A., and Mankad, Ravin. Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices. United States: N. p., 2019. Web.
Gershon, Talia S., Gunawan, Oki, Haight, Richard A., & Mankad, Ravin. Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices. United States.
Gershon, Talia S., Gunawan, Oki, Haight, Richard A., and Mankad, Ravin. Tue . "Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices". United States. https://www.osti.gov/servlets/purl/1600168.
@article{osti_1600168,
title = {Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices},
author = {Gershon, Talia S. and Gunawan, Oki and Haight, Richard A. and Mankad, Ravin},
abstractNote = {Techniques for forming an ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices. In one aspect, a method for forming a photovoltaic device includes the steps of: depositing a refractory electrode material onto a substrate; depositing a contact material onto the refractory electrode material, wherein the contact material includes a transition metal oxide; forming an absorber layer on the contact material, wherein the absorber layer includes Ag, Zn, Sn, and at least one of S and Se; annealing the absorber layer; forming a buffer layer on the absorber layer; and forming a top electrode on the buffer layer. The refractory electrode material may be Mo, W, Pt, Ti, TiN, FTO, and combinations thereof. The transition metal oxide may be TiO2, ZnO, SnO, ZnSnO, Ga2O3, and combinations thereof. A photovoltaic device is also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {10}
}

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Works referenced in this record:

Heat treatment process and photovoltaic device based on said process
patent, February 2014


Fluorinated tin oxide back contact for AZTSSe photovoltaic devices
patent, March 2017


Current enhanced photovoltaic device
patent, April 1983