Boron–oxygen complex yields n-type surface layer in semiconducting diamond
Abstract
Diamond is a wide-bandgap semiconductor possessing exceptional physical and chemical properties with the potential to miniaturize high-power electronics. Whereas boron-doped diamond (BDD) is a well-known p-type semiconductor, fabrication of practical diamond-based electronic devices awaits development of an effective n-type dopant with satisfactory electrical properties. Here we report the synthesis of n-type diamond, containing boron (B) and oxygen (O) complex defects. We obtain high carrier concentration (~0.778 × 10 21cm -3) several orders of magnitude greater than previously obtained with sulfur or phosphorous, accompanied by high electrical conductivity. In high-pressure high-temperature (HPHT) boron-doped diamond single crystal we formed a boron-rich layer ~1–1.5 μm thick in the {111} surface containing up to 1.4 atomic % B. We show that under certain HPHT conditions the boron dopants combine with oxygen defects to form B–O complexes that can be tuned by controlling the experimental parameters for diamond crystallization, thus giving rise to n-type conduction. First-principles calculations indicate that B 3O and B 4O complexes with low formation energies exhibit shallow donor levels, elucidating the mechanism of the n-type semiconducting behavior.
- Authors:
-
[1];
[4]
- Qufu Normal Univ., Shandong (China); Northwestern Univ., Evanston, IL (United States)
- Univ. of Missouri, Columbia, MO (United States)
- Univ. of Alberta, Edmonton, AB (Canada)
- Northwestern Univ., Evanston, IL (United States)
- Univ. of Bayreuth (Germany)
- Publication Date:
- Research Org.:
- George Washington Univ., Washington, DC (United States); Univ. of Missouri, Columbia, MO (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA), Office of Defense Programs (DP); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1599893
- Grant/Contract Number:
- NA0003858; SC0019114; AC02-06CH11357
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Proceedings of the National Academy of Sciences of the United States of America
- Additional Journal Information:
- Journal Volume: 116; Journal Issue: 16; Journal ID: ISSN 0027-8424
- Publisher:
- National Academy of Sciences
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; diamond; boron; defects; semiconductor; high pressure
Citation Formats
Liu, Xiaobing, Chen, Xin, Singh, David J., Stern, Richard A., Wu, Jinsong, Petitgirard, Sylvain, Bina, Craig R., and Jacobsen, Steven D. Boron–oxygen complex yields n-type surface layer in semiconducting diamond. United States: N. p., 2019.
Web. doi:10.1073/pnas.1821612116.
Liu, Xiaobing, Chen, Xin, Singh, David J., Stern, Richard A., Wu, Jinsong, Petitgirard, Sylvain, Bina, Craig R., & Jacobsen, Steven D. Boron–oxygen complex yields n-type surface layer in semiconducting diamond. United States. https://doi.org/10.1073/pnas.1821612116
Liu, Xiaobing, Chen, Xin, Singh, David J., Stern, Richard A., Wu, Jinsong, Petitgirard, Sylvain, Bina, Craig R., and Jacobsen, Steven D. Mon .
"Boron–oxygen complex yields n-type surface layer in semiconducting diamond". United States. https://doi.org/10.1073/pnas.1821612116. https://www.osti.gov/servlets/purl/1599893.
@article{osti_1599893,
title = {Boron–oxygen complex yields n-type surface layer in semiconducting diamond},
author = {Liu, Xiaobing and Chen, Xin and Singh, David J. and Stern, Richard A. and Wu, Jinsong and Petitgirard, Sylvain and Bina, Craig R. and Jacobsen, Steven D.},
abstractNote = {Diamond is a wide-bandgap semiconductor possessing exceptional physical and chemical properties with the potential to miniaturize high-power electronics. Whereas boron-doped diamond (BDD) is a well-known p-type semiconductor, fabrication of practical diamond-based electronic devices awaits development of an effective n-type dopant with satisfactory electrical properties. Here we report the synthesis of n-type diamond, containing boron (B) and oxygen (O) complex defects. We obtain high carrier concentration (~0.778 × 1021cm-3) several orders of magnitude greater than previously obtained with sulfur or phosphorous, accompanied by high electrical conductivity. In high-pressure high-temperature (HPHT) boron-doped diamond single crystal we formed a boron-rich layer ~1–1.5 μm thick in the {111} surface containing up to 1.4 atomic % B. We show that under certain HPHT conditions the boron dopants combine with oxygen defects to form B–O complexes that can be tuned by controlling the experimental parameters for diamond crystallization, thus giving rise to n-type conduction. First-principles calculations indicate that B3O and B4O complexes with low formation energies exhibit shallow donor levels, elucidating the mechanism of the n-type semiconducting behavior.},
doi = {10.1073/pnas.1821612116},
url = {https://www.osti.gov/biblio/1599893},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
issn = {0027-8424},
number = 16,
volume = 116,
place = {United States},
year = {2019},
month = {4}
}
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Works referenced in this record:
Generalized Gradient Approximation Made Simple
journal, October 1996
- Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
- Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
On the substitutional nitrogen donor in diamond
journal, May 1969
- Farrer, R. G.
- Solid State Communications, Vol. 7, Issue 9
Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films
journal, August 1997
- Koizumi, S.; Kamo, M.; Sato, Y.
- Applied Physics Letters, Vol. 71, Issue 8
N-type control of single-crystal diamond films by ultra-lightly phosphorus doping
journal, October 2016
- Kato, Hiromitsu; Ogura, Masahiko; Makino, Toshiharu
- Applied Physics Letters, Vol. 109, Issue 14
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996
- Kresse, G.; Furthmüller, J.
- Computational Materials Science, Vol. 6, Issue 1, p. 15-50
Thermodynamic and experimental conditions for the fabrication of a boron carbide layer on high-modulus carbon fiber surfaces by RCVD
journal, January 1992
- Vincent, H.; Vincent, C.; Scharff, J. P.
- Carbon, Vol. 30, Issue 3
Role of native defects in wide-band-gap semiconductors
journal, February 1991
- Laks, D. B.; Van de Walle, C. G.; Neumark, G. F.
- Physical Review Letters, Vol. 66, Issue 5
Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers
journal, June 2003
- Teukam, Zéphirin; Chevallier, Jacques; Saguy, Cécile
- Nature Materials, Vol. 2, Issue 7
Sulfur: A potential donor in diamond
journal, August 2000
- Saada, D.; Adler, Joan; Kalish, R.
- Applied Physics Letters, Vol. 77, Issue 6
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996
- Kresse, G.; Furthmüller, J.
- Physical Review B, Vol. 54, Issue 16, p. 11169-11186
Ultraviolet Emission from a Diamond pn Junction
journal, June 2001
- Koizumi, S.
- Science, Vol. 292, Issue 5523
Visible-Light-Responsive β-Rhombohedral Boron Photocatalysts
journal, April 2013
- Liu, Gang; Yin, Li-Chang; Niu, Ping
- Angewandte Chemie International Edition, Vol. 52, Issue 24
Inhomogeneous Electron Gas
journal, November 1964
- Hohenberg, P.; Kohn, W.
- Physical Review, Vol. 136, Issue 3B, p. B864-B871
High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
journal, September 2002
- Isberg, Jan; Hammersberg, Johan; Johansson, Erik
- Science, Vol. 297, Issue 5587, p. 1670-1672
Atomic layers of hybridized boron nitride and graphene domains
journal, February 2010
- Ci, Lijie; Song, Li; Jin, Chuanhong
- Nature Materials, Vol. 9, Issue 5, p. 430-435
Electrons dance in diamond
journal, July 2013
- Nebel, Christoph E.
- Nature Materials, Vol. 12, Issue 8
Limitations to n ‐type doping in diamond: The phosphorus‐vacancy complex
journal, October 1996
- Jones, R.; Lowther, J. E.; Goss, J.
- Applied Physics Letters, Vol. 69, Issue 17
Shallow Donor State Due to Nitrogen-Hydrogen Complex in Diamond
journal, January 2002
- Miyazaki, Takehide; Okushi, Hideyo; Uda, Tsuyoshi
- Physical Review Letters, Vol. 88, Issue 6
High thermoelectric performance due to nano-inclusions and randomly distributed interface potentials in N-type (PbTe 0.93−x Se 0.07 Cl x ) 0.93 (PbS) 0.07 composites
journal, January 2017
- Ginting, Dianta; Lin, Chan-Chieh; Rathnam, Lydia
- Journal of Materials Chemistry A, Vol. 5, Issue 26
Superconductivity in diamond
journal, May 2010
- Sidorov, V. A.; Ekimov, E. A.
- Diamond and Related Materials, Vol. 19, Issue 5-6
High temperature application of diamond power device
journal, April 2012
- Umezawa, Hitoshi; Nagase, Masanori; Kato, Yukako
- Diamond and Related Materials, Vol. 24
Shallow Donors in Diamond: Chalcogens, Pnictogens, and their Hydrogen Complexes
journal, January 2004
- Sque, S. J.; Jones, R.; Goss, J. P.
- Physical Review Letters, Vol. 92, Issue 1
Theory of boron aggregates in diamond: First-principles calculations
journal, February 2006
- Goss, J. P.; Briddon, P. R.
- Physical Review B, Vol. 73, Issue 8
Synthesis and characterization of boron-doped carbons
journal, January 1995
- Cermignani, William; Paulson, Thomas E.; Onneby, Carina
- Carbon, Vol. 33, Issue 4, p. 367-374
Microwave-Assisted Surface Synthesis of a Boron-Carbon-Nitrogen Foam and its Desorption Enthalpy
journal, May 2012
- Paul, Rajib; Voevodin, Andrey A.; Zemlyanov, Dimitry
- Advanced Functional Materials, Vol. 22, Issue 17
Nitrogen and potential n -type dopants in diamond
journal, April 1991
- Kajihara, S. A.; Antonelli, A.; Bernholc, J.
- Physical Review Letters, Vol. 66, Issue 15
MATERIALS SCIENCE: The New Diamond Age?
journal, March 2008
- May, P. W.
- Science, Vol. 319, Issue 5869
Measurement of the substitutional nitrogen activation energy in diamond films
journal, August 1998
- Li, B. B.; Tosin, M. C.; Peterlevitz, A. C.
- Applied Physics Letters, Vol. 73, Issue 6
Negative Electron Affinity and Low Work Function Surface: Cesium on Oxygenated Diamond (100)
journal, September 1994
- Pickett, Warren E.
- Physical Review Letters, Vol. 73, Issue 12
Sulfonated Graphene for Persistent Aromatic Pollutant Management
journal, July 2011
- Zhao, Guixia; Jiang, Lang; He, Yudong
- Advanced Materials, Vol. 23, Issue 34
Nitrogen- and oxygen-containing activated carbon nanotubes with improved capacitive properties
journal, January 2014
- Zhou, Zhenfang; Zhang, Zhonghua; Peng, Hongrui
- RSC Advances, Vol. 4, Issue 11
Is sulfur a donor in diamond?
journal, February 2000
- Kalish, R.; Reznik, A.; Uzan-Saguy, C.
- Applied Physics Letters, Vol. 76, Issue 6
Ultrahard stitching of nanotwinned diamond and cubic boron nitride in C2-BN composite
journal, July 2016
- Liu, Xiaobing; Chen, Xin; Ma, Hong-An
- Scientific Reports, Vol. 6, Issue 1
Self-Consistent Equations Including Exchange and Correlation Effects
journal, November 1965
- Kohn, W.; Sham, L. J.
- Physical Review, Vol. 140, Issue 4A, p. A1133-A1138
Sulfur: A donor dopant for n -type diamond semiconductors
journal, July 1999
- Sakaguchi, Isao; N. -Gamo, Mikka; Kikuchi, Yuko
- Physical Review B, Vol. 60, Issue 4
Inhomogeneous Electron Gas
journal, March 1973
- Rajagopal, A. K.; Callaway, J.
- Physical Review B, Vol. 7, Issue 5
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Ultrahigh Thermoelectric Performance Realized in Black Phosphorus System by Favorable Band Engineering through Group VA Doping
journal, July 2019
- Duan, Shuai; Cui, Yangfan; Chen, Xin
- Advanced Functional Materials, Vol. 29, Issue 38
Discovery of pressure‐induced monoclinic to monoclinic phase transition above 60 GPa in single crystal NaAlSi 2 O 6 jadeite
journal, January 2020
- Fei, Ge; Song, Jingyan; Chen, Xin
- Journal of Raman Spectroscopy, Vol. 51, Issue 5
Enhanced strength of nano-polycrystalline diamond by introducing boron carbide interlayers at the grain boundaries
journal, January 2020
- Zhao, Bo; Zhang, Shengya; Duan, Shuai
- Nanoscale Advances, Vol. 2, Issue 2
Tailoring of nitrogen-vacancy colour centers in diamond epilayers by in situ sulfur and nitrogen anion engineering
journal, December 2019
- Hao, L. C.; Shen, Y.; Yang, X. D.
- Journal of Physics D: Applied Physics, Vol. 53, Issue 7