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Title: Hydrogenation Mechanisms of Poly-Si/SiO x Passivating Contacts by Different Capping Layers

Abstract

Herein, posttreatment techniques of phosphorus-doped poly-Si/SiO x passivating contacts, including forming gas annealing (FGA), atomic layer deposition (ALD) of hydrogenated aluminum oxide (AlO x:H), and plasma-enhanced chemical vapor deposition (PECVD) of hydrogenated silicon nitride (SiN x:H), are investigated and compared in terms of their application to silicon solar cells. A simple FGA posttreatment produces a significant increase in the implied open circuit voltage (iV oc) and the effective minority-carrier lifetime (teff) of high-resistivity crystalline Si (c-Si) samples, whereas low-resistivity samples show a minimal change. Treatment by means of AlO x:H and/or SiN x:H followed by postdeposition FGA results in a universal increase in t eff and iV oc for all substrate resistivities (as high as 12.5 ms and 728 mV for 100 Ω cm and 5.4 ms and 727 mV for 2 Ω cm n-type c-Si substrates). In addition, both the FGA and AlO x:H + FGA techniques can inject sufficient hydrogen into the samples to passivate defects at the SiO x/c-Si and poly-Si/SiO x interfaces. However, this hydrogen concentration is insufficient to neutralize both the nonradiative defects inside the poly-Si films and dangling bonds associated with the amorphous Si phase present in them. The hydrogen injected by the SiNmore » x:H + FGA technique can passivate both the interfaces and the defects and dangling bonds within the poly-Si film. These results are confirmed by low-temperature photoluminescence spectroscopy, Fourier transform infrared spectroscopy, and dynamic secondary-ion mass spectrometry measurements.« less

Authors:
ORCiD logo [1];  [1];  [2];  [1];  [3];  [3];  [1];  [1];  [1]
  1. Australian National Univ., Canberra, ACT (Australia)
  2. Australian National Univ., Canberra, ACT (Australia); Nanchang Univ. (China)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
Australian Renewable Energy Agency (ARENA); USDOE
OSTI Identifier:
1596623
Report Number(s):
NREL/JA-5K00-75263
Journal ID: ISSN 2367-198X
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Solar RRL
Additional Journal Information:
Journal Name: Solar RRL; Journal ID: ISSN 2367-198X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; aluminum oxide; doped polycrystalline silicon; forming gas anneal; hydrogenation; passivating contacts; silicon nitride

Citation Formats

Truong, Thien N., Yan, Di, Chen, Wenhao, Tebyetekerwa, Mike, Young, Matthew R., Al-Jassim, Mowafak M., Cuevas, Andres, Macdonald, Daniel, and Nguyen, Hieu T. Hydrogenation Mechanisms of Poly-Si/SiO x Passivating Contacts by Different Capping Layers. United States: N. p., 2019. Web. doi:10.1002/solr.201900476.
Truong, Thien N., Yan, Di, Chen, Wenhao, Tebyetekerwa, Mike, Young, Matthew R., Al-Jassim, Mowafak M., Cuevas, Andres, Macdonald, Daniel, & Nguyen, Hieu T. Hydrogenation Mechanisms of Poly-Si/SiO x Passivating Contacts by Different Capping Layers. United States. doi:10.1002/solr.201900476.
Truong, Thien N., Yan, Di, Chen, Wenhao, Tebyetekerwa, Mike, Young, Matthew R., Al-Jassim, Mowafak M., Cuevas, Andres, Macdonald, Daniel, and Nguyen, Hieu T. Wed . "Hydrogenation Mechanisms of Poly-Si/SiO x Passivating Contacts by Different Capping Layers". United States. doi:10.1002/solr.201900476.
@article{osti_1596623,
title = {Hydrogenation Mechanisms of Poly-Si/SiO x Passivating Contacts by Different Capping Layers},
author = {Truong, Thien N. and Yan, Di and Chen, Wenhao and Tebyetekerwa, Mike and Young, Matthew R. and Al-Jassim, Mowafak M. and Cuevas, Andres and Macdonald, Daniel and Nguyen, Hieu T.},
abstractNote = {Herein, posttreatment techniques of phosphorus-doped poly-Si/SiOx passivating contacts, including forming gas annealing (FGA), atomic layer deposition (ALD) of hydrogenated aluminum oxide (AlOx:H), and plasma-enhanced chemical vapor deposition (PECVD) of hydrogenated silicon nitride (SiNx:H), are investigated and compared in terms of their application to silicon solar cells. A simple FGA posttreatment produces a significant increase in the implied open circuit voltage (iVoc) and the effective minority-carrier lifetime (teff) of high-resistivity crystalline Si (c-Si) samples, whereas low-resistivity samples show a minimal change. Treatment by means of AlOx:H and/or SiNx:H followed by postdeposition FGA results in a universal increase in teff and iVoc for all substrate resistivities (as high as 12.5 ms and 728 mV for 100 Ω cm and 5.4 ms and 727 mV for 2 Ω cm n-type c-Si substrates). In addition, both the FGA and AlOx:H + FGA techniques can inject sufficient hydrogen into the samples to passivate defects at the SiOx/c-Si and poly-Si/SiOx interfaces. However, this hydrogen concentration is insufficient to neutralize both the nonradiative defects inside the poly-Si films and dangling bonds associated with the amorphous Si phase present in them. The hydrogen injected by the SiNx:H + FGA technique can passivate both the interfaces and the defects and dangling bonds within the poly-Si film. These results are confirmed by low-temperature photoluminescence spectroscopy, Fourier transform infrared spectroscopy, and dynamic secondary-ion mass spectrometry measurements.},
doi = {10.1002/solr.201900476},
journal = {Solar RRL},
issn = {2367-198X},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {11}
}

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Works referenced in this record:

Sub-Bandgap Luminescence from Doped Polycrystalline and Amorphous Silicon Films and Its Application to Understanding Passivating-Contact Solar Cells
journal, October 2018

  • Nguyen, Hieu T.; Liu, Anyao; Yan, Di
  • ACS Applied Energy Materials, Vol. 1, Issue 11
  • DOI: 10.1021/acsaem.8b01561

Tunnel oxide passivated contacts as an alternative to partial rear contacts
journal, December 2014


Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence
journal, January 2014

  • Nguyen, Hieu T.; Rougieux, Fiacre E.; Mitchell, Bernhard
  • Journal of Applied Physics, Vol. 115, Issue 4
  • DOI: 10.1063/1.4862912

Development of the PERC Solar Cell
journal, May 2019


Hydrogenation and dehydrogenation of amorphous and crystalline silicon
journal, April 1978

  • Pankove, J. I.; Lampert, M. A.; Tarng, M. L.
  • Applied Physics Letters, Vol. 32, Issue 7
  • DOI: 10.1063/1.90078

A contactless photoconductance technique to evaluate the quantum efficiency of solar cell emitters
journal, February 2002


Tunnel oxide passivating electron contacts as full-area rear emitter of high-efficiency p-type silicon solar cells
journal, November 2017

  • Richter, Armin; Benick, Jan; Müller, Ralph
  • Progress in Photovoltaics: Research and Applications, Vol. 26, Issue 8
  • DOI: 10.1002/pip.2960

The Effect of Bifacial AlOx Deposition on PERC Solar Cell Performance
journal, November 2017


Roles of hydrogen atoms in p-type Poly-Si/SiO x passivation layer for crystalline silicon solar cell applications
journal, April 2019

  • Lozac’h, Mickaël; Nunomura, Shota; Umishio, Hiroshi
  • Japanese Journal of Applied Physics, Vol. 58, Issue 5
  • DOI: 10.7567/1347-4065/ab14fe

Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
journal, October 2011

  • Hoex, B.; van de Sanden, M. C. M.; Schmidt, J.
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 6, Issue 1, p. 4-6
  • DOI: 10.1002/pssr.201105445

Passivation property of ultrathin SiOx:H / a-Si:H stack layers for solar cell applications
journal, October 2018


Photoluminescence of hydrogenated amorphous silicon
journal, October 1977

  • Pankove, J. I.; Carlson, D. E.
  • Applied Physics Letters, Vol. 31, Issue 7
  • DOI: 10.1063/1.89737

Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy: Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy
journal, August 2013

  • Hoex, Bram; Bosman, Michel; Nandakumar, Naomi
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 7, Issue 11
  • DOI: 10.1002/pssr.201308081

Phosphorus-diffused polysilicon contacts for solar cells
journal, November 2015


Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO 2 /plasma SiN stacks
journal, February 2001

  • Schmidt, Jan; Kerr, Mark; Cuevas, Andrés
  • Semiconductor Science and Technology, Vol. 16, Issue 3
  • DOI: 10.1088/0268-1242/16/3/308

Effect of PECVD silicon oxynitride film composition on the surface passivation of silicon wafers
journal, January 2012


Passivating contacts for silicon solar cells based on boron-diffused recrystallized amorphous silicon and thin dielectric interlayers
journal, August 2016


Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon
journal, November 2013

  • Wilking, S.; Ebert, S.; Herguth, A.
  • Journal of Applied Physics, Vol. 114, Issue 19
  • DOI: 10.1063/1.4833243

Hydrogen concentration at a-Si:H/c-Si heterointerfaces—The impact of deposition temperature on passivation performance
journal, July 2019

  • Gotoh, Kazuhiro; Wilde, Markus; Kato, Shinya
  • AIP Advances, Vol. 9, Issue 7
  • DOI: 10.1063/1.5100086

Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells
journal, November 2018


Hydrogen passivation of poly-Si/SiO x contacts for Si solar cells using Al 2 O 3 studied with deuterium
journal, May 2018

  • Schnabel, Manuel; van de Loo, Bas W. H.; Nemeth, William
  • Applied Physics Letters, Vol. 112, Issue 20
  • DOI: 10.1063/1.5031118

Photovoltaic technology and visions for the future
journal, July 2019


Solar cell efficiency tables (Version 53)
journal, December 2018

  • Green, Martin A.; Hishikawa, Yoshihiro; Dunlop, Ewan D.
  • Progress in Photovoltaics: Research and Applications, Vol. 27, Issue 1
  • DOI: 10.1002/pip.3102

High efficiency n-type silicon solar cells with passivating contacts based on PECVD silicon films doped by phosphorus diffusion
journal, May 2019


Boron Emitter Passivation With Al2O3 and Al2O3/SiNx Stacks Using ALD Al2O3
journal, January 2013


Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy
journal, February 2016


Hydrogen bonding in plasma-deposited amorphous hydrogenated boron films
journal, August 1997

  • Saß, M.; Annen, A.; Jacob, W.
  • Journal of Applied Physics, Vol. 82, Issue 4
  • DOI: 10.1063/1.365997

The effect of emitter recombination on the effective lifetime of silicon wafers
journal, March 1999


Hydrogenation of Phosphorus-Doped Polycrystalline Silicon Films for Passivating Contact Solar Cells
journal, January 2019

  • Truong, Thien N.; Yan, Di; Samundsett, Christian
  • ACS Applied Materials & Interfaces, Vol. 11, Issue 5
  • DOI: 10.1021/acsami.8b19989

Status and prospects of Al 2 O 3 -based surface passivation schemes for silicon solar cells
journal, July 2012

  • Dingemans, G.; Kessels, W. M. M.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 4
  • DOI: 10.1116/1.4728205

The role of hydrogenation and gettering in enhancing the efficiency of next‐generation Si solar cells: An industrial perspective
journal, June 2017

  • Hallam, Brett; Chen, Daniel; Kim, Moonyong
  • physica status solidi (a), Vol. 214, Issue 7
  • DOI: 10.1002/pssa.201700305

Measuring and interpreting the lifetime of silicon wafers
journal, January 2004