Phototuning Selectively Hole and Electron Transport in Optically Switchable Ambipolar Transistors

Rekab, Wassima; Leydecker, Tim; Hou, Lili; Chen, Hu; Kirkus, Mindaugas; Cendra, Camila; Herder, Martin; Hecht, Stefan; Salleo, Alberto; McCulloch, Iain; Orgiu, Emanuele; Samorì, Paolo

doi:10.1002/adfm.201908944

Title: Phototuning Selectively Hole and Electron Transport in Optically Switchable Ambipolar Transistors

Journal Article · Wed Dec 04 00:00:00 EST 2019 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201908944· OSTI ID:1594962

Rekab, Wassima ^[1]; Leydecker, Tim ^[1]; Hou, Lili ^[1]; Chen, Hu ^[2]; Kirkus, Mindaugas ^[2]; Cendra, Camila ^[3]; Herder, Martin ^[4]; Hecht, Stefan ^[4]; Salleo, Alberto ^[3]; McCulloch, Iain ^[5]; Orgiu, Emanuele ^[1];

^[1]

Univ. de Strasbourg (France)
King Abdullah Univ. of Science and Technology (KAUST), Thuwal (Saudi Arabia)
Stanford Univ., CA (United States)
Humboldt‐Univ. zu Berlin (Germany)
King Abdullah Univ. of Science and Technology (KAUST), Thuwal (Saudi Arabia); Imperial College, London (United Kingdom)

One of the grand challenges in organic electronics is to develop multicomponent materials wherein each component imparts a different and independently addressable property to the hybrid system. In this way, the combination of the pristine properties of each component is not only preserved but also combined with unprecedented properties emerging from the mutual interaction between the components. Here for the first time, that tri–component materials comprised of an ambipolar diketopyrrolopyrrole–based semiconducting polymer combined with two different photochromic diarylethene molecules possessing ad hoc energy levels can be used to develop organic field–effect transistors, in which the transport of both, holes and electrons, can be photo–modulated. A fully reversible light–switching process is demonstrated, with a light–controlled 100–fold modulation of p–type charge transport and a tenfold modulation of n–type charge transport. Furthermore, these findings pave the way for photo–tunable inverters and ultimately for completely re–addressable high–performance circuits comprising optical storage units and ambipolar field–effect transistors.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: GA‐257305; ANR‐10‐LABX‐0026 CSC; SFB 658; SFB 951; AC02‐76SF00515

OSTI ID:: 1594962

Alternate ID(s):: OSTI ID: 1577023

Journal Information:: Advanced Functional Materials, Vol. 30, Issue 5; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 23 works

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36 MATERIALS SCIENCE
ambipolar transport
diarylethenes
organic field‐effect transistors
photochromic molecules
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Title: Phototuning Selectively Hole and Electron Transport in Optically Switchable Ambipolar Transistors

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