Effects of trifluoromethyl substituents on interfacial and bulk polarization of polystyrene gate dielectrics

Plunkett, Evan; Kale, Tejaswini S.; Zhang, Qingyang; Katz, Howard E.; Reich, Daniel H.

doi:10.1063/1.5080951

Title: Effects of trifluoromethyl substituents on interfacial and bulk polarization of polystyrene gate dielectrics

Journal Article · Mon Jan 14 00:00:00 EST 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5080951· OSTI ID:1594540

Plunkett, Evan ^[1]; Kale, Tejaswini S. ^[1]; Zhang, Qingyang ^[1]; Katz, Howard E. ^[1];

^[1]

Johns Hopkins Univ., Baltimore, MD (United States)

The ability to control the bulk and interfacial polarization of dielectric polymers is important to their application in organic electronics. As such, we examine the effect of the trifluoromethyl substituent on poly(3-trifluoromethylstyrene) (P3TFMS) as compared to unsubstituted polystyrene (PS) on the I-V relationships of pentacene-based organic field-effect transistors (OFETs). Single- and double-layered films of these polymers were used, with lower layers crosslinked through vinylbenzocyclobutene comonomers before deposition of upper layers. Control experiments verified that the electronic effect of the crosslinking was negligible. We find that the TFM substituent markedly and independently affects both the initial threshold voltage V_th and the nonvolatile, shifted Vth observed after application of static gate voltage, depending on its position adjacent or apart from the pentacene. The trifluoromethyl-bearing polymers exhibit significantly lower magnitude initial threshold voltages (V_th,i of ca. -17 V for P3TFMS compared to -35 V for PS), large threshold voltage shifts after charging by application of static electric fields (ΔV_th of ca. 32 V for P3TFMS and 17 V for PS) and greater stability of the ΔV_th under repeated charge/discharge cycles. These results are consistent with P3TFMS having fewer interfacial trap states but more stable bulk trap states. The results are applicable to organo-electronic systems such as piezoelectrics for energy harvesting and nonvolatile OFETs as memory, sensing, and logic elements.

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Research Organization:: Johns Hopkins Univ., Baltimore, MD (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-07ER46465

OSTI ID:: 1594540

Journal Information:: Applied Physics Letters, Vol. 114, Issue 2; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 3 works

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