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Title: Nucleation and Growth of Metamorphic Epitaxial Aluminum on Silicon (111) 7 x 7 and v3 x v3 surfaces

Abstract

The nucleation and growth of Al on 7×7 and v3×v3 R30 Al reconstructed Si (111) that result in strain-free Al overgrown films are grown with an atomically abrupt metamorphic interface are compared. The reconstructed surfaces and abrupt strain relaxation are verified using reflection high energy electron diffraction. The topography evolution is studied with atomic force microscopy. The growth of Al on both the surfaces exhibit 3D island growth, but the island evolution of growth is dramatically different. On the 7×7 surface, mounds form uniformly distributed across the substrate, and growth appears to proceed uniformly. Alternatively, on the v3×v3 R30 surface, Al atoms exhibit a clear preference to form mounds near the step edges. During Al growth, mounds increase in size and number, expanding out from step edges until they cover the whole substrate.

Authors:
 [1];  [1];  [2];  [2];  [1]
  1. University of Maryland at College Park
  2. BATTELLE (PACIFIC NW LAB)
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1592708
Report Number(s):
PNNL-SA-128876
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Journal of Materials Research
Additional Journal Information:
Journal Volume: 32; Journal Issue: 21
Country of Publication:
United States
Language:
English

Citation Formats

Alexander, Ashish, McSkimming, Brian M., Arey, Bruce W., Arslan, Ilke, and Richardson, Christopher J. Nucleation and Growth of Metamorphic Epitaxial Aluminum on Silicon (111) 7 x 7 and v3 x v3 surfaces. United States: N. p., 2017. Web. doi:10.1557/jmr.2017.322.
Alexander, Ashish, McSkimming, Brian M., Arey, Bruce W., Arslan, Ilke, & Richardson, Christopher J. Nucleation and Growth of Metamorphic Epitaxial Aluminum on Silicon (111) 7 x 7 and v3 x v3 surfaces. United States. https://doi.org/10.1557/jmr.2017.322
Alexander, Ashish, McSkimming, Brian M., Arey, Bruce W., Arslan, Ilke, and Richardson, Christopher J. 2017. "Nucleation and Growth of Metamorphic Epitaxial Aluminum on Silicon (111) 7 x 7 and v3 x v3 surfaces". United States. https://doi.org/10.1557/jmr.2017.322.
@article{osti_1592708,
title = {Nucleation and Growth of Metamorphic Epitaxial Aluminum on Silicon (111) 7 x 7 and v3 x v3 surfaces},
author = {Alexander, Ashish and McSkimming, Brian M. and Arey, Bruce W. and Arslan, Ilke and Richardson, Christopher J.},
abstractNote = {The nucleation and growth of Al on 7×7 and v3×v3 R30 Al reconstructed Si (111) that result in strain-free Al overgrown films are grown with an atomically abrupt metamorphic interface are compared. The reconstructed surfaces and abrupt strain relaxation are verified using reflection high energy electron diffraction. The topography evolution is studied with atomic force microscopy. The growth of Al on both the surfaces exhibit 3D island growth, but the island evolution of growth is dramatically different. On the 7×7 surface, mounds form uniformly distributed across the substrate, and growth appears to proceed uniformly. Alternatively, on the v3×v3 R30 surface, Al atoms exhibit a clear preference to form mounds near the step edges. During Al growth, mounds increase in size and number, expanding out from step edges until they cover the whole substrate.},
doi = {10.1557/jmr.2017.322},
url = {https://www.osti.gov/biblio/1592708}, journal = {Journal of Materials Research},
number = 21,
volume = 32,
place = {United States},
year = {Tue Nov 14 00:00:00 EST 2017},
month = {Tue Nov 14 00:00:00 EST 2017}
}

Works referenced in this record:

Charge-insensitive qubit design derived from the Cooper pair box
journal, October 2007


Novel plastic strain‐relaxation mode in highly mismatched III‐V layers induced by two‐dimensional epitaxial growth
journal, April 1995


Effects of Si reconstruction on growth mode in studied by scanning tunneling microscopy
journal, June 1996


Different Growth Modes of Al on Si(111)7 ×7 and Si(111)$\mbi{\sqrt{3}\times\sqrt{3}}$–Al Surfaces
journal, August 1999


Planar superconducting resonators with internal quality factors above one million
journal, March 2012


Crystal Interfaces. Part II. Finite Overgrowths
journal, January 1963


Metamorphic growth of relaxed single crystalline aluminum on silicon (111)
journal, December 2016

  • McSkimming, Brian M.; Alexander, Ashish; Samuels, Margaret H.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 35, Issue 2
  • https://doi.org/10.1116/1.4971200

Interface accommodation mechanism for weakly interacting epitaxial systems
journal, July 2013


Theoretical considerations in growing uniform epilayers
journal, March 1993


Crystal Interfaces. Part I. Semi‐Infinite Crystals
journal, January 1963


Molecular beam epitaxy growth and characterization of thin (<2 mu m) GaSb layers on GaAs(100) substrates
journal, March 1993


Equilibrium Structure of a Thin Epitaxial Film
journal, October 1970


Correct substrate temperature monitoring with infrared optical pyrometer for molecular-beam epitaxy of III–V semiconductors
journal, November 1988


Surface loss simulations of superconducting coplanar waveguide resonators
journal, September 2011


Premelting of Al nonperfect (111) surface
journal, March 2010


InSb quantum-well structures for electronic device applications
journal, March 2009


Optical, Hall and cyclotron resonance measurements of GaSb grown by molecular beam epitaxy
journal, December 1988


Superconducting quantum circuits at the surface code threshold for fault tolerance
journal, April 2014


Reflection high-energy electron diffraction evaluation of thermal deoxidation of chemically cleaned Si, SiGe, and Ge layers for solid-source molecular beam epitaxy
journal, November 2012


Fabrication artifacts and parallel loss channels in metamorphic epitaxial aluminum superconducting resonators
journal, April 2016


Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffraction
journal, December 1985


Comparison of Si(111) surfaces prepared using aqueous solutions of NH 4 F versus HF
journal, April 1991


Computed epitaxial monolayer structures
journal, April 1981


Structural study of Al deposited surface on Si(1 1 1)-Al
journal, January 2001


Mechanisms for the stability of Al and B adatoms on the Si ( 111 ) 3 × 3 R 30 ° surface
journal, January 1999


Direct observation of the thickness distribution of ultra thin AlO x barriers in Al/AlO x /Al Josephson junctions
journal, September 2015


Characterization and reduction of microfabrication-induced decoherence in superconducting quantum circuits
journal, August 2014


Si ( 111 ) 3 × 3 -Al: An Adatom-Induced Reconstruction
journal, August 1984


Improved GaSb-based quantum well laser performance through metamorphic growth on GaAs substrates
journal, March 2015


Misfit accommodation at interfaces by dislocations
journal, July 1982


Cavity quantum electrodynamics for superconducting electrical circuits: An architecture for quantum computation
journal, June 2004


Surface reactions of silicon with aluminum and with indium
journal, January 1964


Migration process of an Al adatom on the Si(111) surface
journal, March 1999


Revisiting the Al/Al2O3 Interface: Coherent Interfaces and Misfit Accommodation
journal, March 2014


The size dependence of equilibrium elastic strain in finite epitaxial islands
journal, June 1972


Experimental evidence for a surface distribution of two-level systems in superconducting lithographed microwave resonators
journal, April 2008


Metamorphic epitaxial materials
journal, March 2016