Femtosecond tracking of carrier relaxation in germanium with extreme ultraviolet transient reflectivity

Kaplan, Christopher J.; Kraus, Peter M.; Ross, Andrew D.; Zürch, Michael; Cushing, Scott K.; Jager, Marieke F.; Chang, Hung-Tzu; Gullikson, Eric M.; Neumark, Daniel M.; Leone, Stephen R.

doi:10.1103/physrevb.97.205202

Title: Femtosecond tracking of carrier relaxation in germanium with extreme ultraviolet transient reflectivity

Journal Article · Tue May 08 00:00:00 EDT 2018 · Physical Review B

DOI:https://doi.org/10.1103/physrevb.97.205202· OSTI ID:1581312

Kaplan, Christopher J. ^[1]; Kraus, Peter M. ^[1]; Ross, Andrew D. ^[1]; Zürch, Michael ^[1]; Cushing, Scott K. ^[1]; Jager, Marieke F. ^[1]; Chang, Hung-Tzu ^[1]; Gullikson, Eric M. ^[2]; Neumark, Daniel M. ^[3]; Leone, Stephen R. ^[3]

Univ. of California, Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Extreme ultraviolet (XUV) transient reflectivity around the germanium M_4,5 edge (3d core-level to valence transition) at 30 eV is advanced to obtain the transient dielectric function of crystalline germanium [100] on femtosecond to picosecond time scales following photoexcitation by broadband visible-to-infrared (VIS/NIR) pulses. By fitting the transient dielectric function, carrier-phonon induced relaxations are extracted for the excited carrier distribution. The measurements reveal a hot electron relaxation rate of 3.2±0.2ps attributed to the X-L intervalley scattering and a hot hole relaxation rate of 600±300fs ascribed to intravalley scattering within the heavy hole (HH) band, both in good agreement with previous work. An overall energy shift of the XUV dielectric function is assigned to a thermally induced band gap shrinkage by formation of acoustic phonons, which is observed to be on a timescale of 4-5 ps, in agreement with previously measured optical phonon lifetimes. The results reveal that the transient reflectivity signal at an angle of 66° with respect to the surface normal is dominated by changes to the real part of the dielectric function, due to the near critical angle of incidence of the experiment (66°-70° for the range of XUV energies used. Finally, this work provides a methodology for interpreting XUV transient reflectivity near core-level transitions, and it demonstrates the power of the XUV spectral region for measuring ultrafast excitation dynamics in solids.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE); Swiss National Science Foundation (SNSF); US Army Research Office (ARO); US Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: AC02-05CH11231; P2EZP2_165252; P300P2_174293; WN911NF- 14-1-0383; A9550-15-1-0037

OSTI ID:: 1581312

Alternate ID(s):: OSTI ID: 1436379

Journal Information:: Physical Review B, Vol. 97, Issue 20; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 36 works

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Lasing in strained germanium microbridges Pilon, Francesco Taro Armand; Lyasota, Alexey; Niquet, Yann-Michel ETH Zurich https://doi.org/10.3929/ethz-b-000351277	text	January 2019

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