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Title: Widely tunable band gap in a multivalley semiconductor SnSe by potassium doping

Abstract

SnSe, a group IV-VI monochalcogenide with layered crystal structure similar to black phosphorus, has recently attracted extensive interest due to its excellent thermoelectric properties and potential device applications. Experimental electronic structure of both the valence and conduction bands is critical for understanding the effects of hole versus electron doping on the thermoelectric properties, and to further reveal possible change of the band gap upon doping. Here, we report the multivalley valence bands with a large effective mass on semiconducting SnSe crystals and reveal single-valley conduction bands through electron doping to provide a complete picture of the thermoelectric physics. Moreover, by electron doping through potassium deposition, the band gap of SnSe can be widely tuned from 1.2 eV to 0.4 eV, providing new opportunities for tunable electronic and optoelectronic devices.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22), Scientific User Facilities Division (SC-22.3 )
OSTI Identifier:
1581053
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Journal Article
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 2; Journal Issue: 5; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English

Citation Formats

Zhang, Kenan, Deng, Ke, Li, Jiaheng, Zhang, Haoxiong, Yao, Wei, Denlinger, Jonathan, Wu, Yang, Duan, Wenhui, and Zhou, Shuyun. Widely tunable band gap in a multivalley semiconductor SnSe by potassium doping. United States: N. p., 2018. Web. doi:10.1103/physrevmaterials.2.054603.
Zhang, Kenan, Deng, Ke, Li, Jiaheng, Zhang, Haoxiong, Yao, Wei, Denlinger, Jonathan, Wu, Yang, Duan, Wenhui, & Zhou, Shuyun. Widely tunable band gap in a multivalley semiconductor SnSe by potassium doping. United States. doi:10.1103/physrevmaterials.2.054603.
Zhang, Kenan, Deng, Ke, Li, Jiaheng, Zhang, Haoxiong, Yao, Wei, Denlinger, Jonathan, Wu, Yang, Duan, Wenhui, and Zhou, Shuyun. Tue . "Widely tunable band gap in a multivalley semiconductor SnSe by potassium doping". United States. doi:10.1103/physrevmaterials.2.054603.
@article{osti_1581053,
title = {Widely tunable band gap in a multivalley semiconductor SnSe by potassium doping},
author = {Zhang, Kenan and Deng, Ke and Li, Jiaheng and Zhang, Haoxiong and Yao, Wei and Denlinger, Jonathan and Wu, Yang and Duan, Wenhui and Zhou, Shuyun},
abstractNote = {SnSe, a group IV-VI monochalcogenide with layered crystal structure similar to black phosphorus, has recently attracted extensive interest due to its excellent thermoelectric properties and potential device applications. Experimental electronic structure of both the valence and conduction bands is critical for understanding the effects of hole versus electron doping on the thermoelectric properties, and to further reveal possible change of the band gap upon doping. Here, we report the multivalley valence bands with a large effective mass on semiconducting SnSe crystals and reveal single-valley conduction bands through electron doping to provide a complete picture of the thermoelectric physics. Moreover, by electron doping through potassium deposition, the band gap of SnSe can be widely tuned from 1.2 eV to 0.4 eV, providing new opportunities for tunable electronic and optoelectronic devices.},
doi = {10.1103/physrevmaterials.2.054603},
journal = {Physical Review Materials},
issn = {2475-9953},
number = 5,
volume = 2,
place = {United States},
year = {2018},
month = {5}
}

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