Chapter 5: Metamorphic Growth and Multijunction III-V Solar Cells

Karam, Nasser H.; Fetzer, Chris M.; Liu, Xing-Quan; Steiner, Myles A; Schulte, Kevin L

doi:10.1002/9781119313021.ch5

Chapter 5: Metamorphic Growth and Multijunction III-V Solar Cells

Book · 30 August 2019

DOI:https://doi.org/10.1002/9781119313021.ch5· OSTI ID:1580326

Karam, Nasser H. ^[1]; Fetzer, Chris M. ^[2]; Liu, Xing-Quan ^[2]; ^[3]; Schulte, Kevin L ^[3]

Karamco USA Inc
Boeing-Spectrolab
National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Metal organic vapor phase epitaxy (MOVPE) has proved to be the primary materials growth technique for low-cost, high-volume III-V multijunction (MJ) solar cells. This chapter shows the typical applications that drive volume production for MJ solar cells using MOVPE. The two commonly used structures for lattice-mismatched MJ solar cells are the upright metamorphic (UMM) structure and the inverted metamorphic (IMM) structure. The chapter discusses the key aspects of reactor technology pertinent to UMM and IMM solar cell growth. The main commercial low-pressure, As/P MOVPE reactor technology are vertical chambers where wafers are held on a planar rotating graphite susceptor, acting to aid the laminar flow or subplanetary rotation used to planarize the growth. The in situ monitoring becomes a critical component when considering lattice-mismatched growth, in particular the measurement of wafer curvature. One may relate the wafer curvature to the net strain at growth temperature through the use of Stoney's equation.

🛈

OSTI does not have a digital full text copy available. For more information, please see document availability, search WorldCat, or search Google Scholar.

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1580326

Report Number(s):: NREL/CH-5900-70117

Country of Publication:: United States

Language:: English

References (64)

Carbon doping and etching in GaxIn1−xAsyP1−y on GaAs substrates using CBr4 by metalorganic chemical vapor deposition Tateno, Kouta; Amano, Chikara Journal of Electronic Materials, Vol. 28, Issue 1 https://doi.org/10.1007/s11664-999-0196-6	journal	January 1999
AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application Jung, D.; Parker, C. A.; Ramdani, J. Journal of Applied Physics, Vol. 74, Issue 3, p. 2090-2093 https://doi.org/10.1063/1.354753	journal	August 1993
Quadruple-Junction Inverted Metamorphic Concentrator Devices France, Ryan M.; Geisz, John F.; Garcia, Ivan IEEE Journal of Photovoltaics, Vol. 5, Issue 1 https://doi.org/10.1109/JPHOTOV.2014.2364132	journal	January 2015
Lattice-Mismatched 0.7-eV GaInAs Solar Cells Grown on GaAs Using GaInP Compositionally Graded Buffers France, Ryan M.; Garcia, Ivan; McMahon, William E. IEEE Journal of Photovoltaics, Vol. 4, Issue 1 https://doi.org/10.1109/JPHOTOV.2013.2281724	journal	January 2014
Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates Andre, C. L.; Boeckl, J. J.; Wilt, D. M. Applied Physics Letters, Vol. 84, Issue 18 https://doi.org/10.1063/1.1736318	journal	May 2004
Carbon doping and etching effects of CBr4 during metalorganic chemical vapor deposition of GaAs and AlAs Tateno, Kouta; Kohama, Yoshitaka; Amano, Chikara Journal of Crystal Growth, Vol. 172, Issue 1-2 https://doi.org/10.1016/S0022-0248(96)00737-3	journal	February 1997
MOVPE grown Ga_1−xIn_xAs solar cells for GaInP/GaInAs tandem applications Dimroth, F.; Lanyi, P.; Schubert, U. Journal of Electronic Materials, Vol. 29, Issue 1, p. 42-46 https://doi.org/10.1007/s11664-000-0092-6	journal	January 2000
Experimental Results From Performance Improvement and Radiation Hardening of Inverted Metamorphic Multijunction Solar Cells Patel, P.; Aiken, D.; Boca, A. IEEE Journal of Photovoltaics, Vol. 2, Issue 3 https://doi.org/10.1109/JPHOTOV.2012.2198048	journal	July 2012
Reduced dislocation density in GaxIn1−xP compositionally graded buffer layers through engineered glide plane switch Schulte, K. L.; France, R. M.; McMahon, W. E. Journal of Crystal Growth, Vol. 464 https://doi.org/10.1016/j.jcrysgro.2016.11.050	journal	April 2017
Influence of the surface morphology on the relaxation of low-strained InxGa1 − xAs linear buffer structures Valtueña, J. F.; Sacedón, A.; Alvarez, A. L. Journal of Crystal Growth, Vol. 182, Issue 3-4 https://doi.org/10.1016/S0022-0248(97)00377-1	journal	December 1997
25.5% efficient Ga/sub 0.35/In/sub 0.65/P/Ga/sub 0.83/In/sub 0.17/As tandem solar cells grown on GaAs substrates Dimroth, F.; Schubert, U.; Bett, A. W. IEEE Electron Device Letters, Vol. 21, Issue 5 https://doi.org/10.1109/55.841298	journal	May 2000
Improvements in the MOVPE growth of multi-junction solar cells for very high concentration Rey-Stolle, I.; Garcia, I.; Galiana, B. Journal of Crystal Growth, Vol. 298 https://doi.org/10.1016/j.jcrysgro.2006.10.093	journal	January 2007
Crystallographic tilting of heteroepitaxial layers Ayers, J. E.; Ghandhi, S. K.; Schowalter, L. J. Journal of Crystal Growth, Vol. 113, Issue 3-4 https://doi.org/10.1016/0022-0248(91)90077-I	journal	September 1991
Dislocation dynamics in relaxed graded composition semiconductors Fitzgerald, E. A.; Kim, A. Y.; Currie, M. T. Materials Science and Engineering: B, Vol. 67, Issue 1-2 https://doi.org/10.1016/S0921-5107(99)00209-3	journal	December 1999
Defects in epitaxial multilayers: II. Dislocation pile-ups, threading dislocations, slip lines and cracks Matthews, J. W.; Blakeslee, A. E. Journal of Crystal Growth, Vol. 29, Issue 3, p. 273-280 https://doi.org/10.1016/0022-0248(75)90171-2	journal	July 1975
Band gap-voltage offset and energy production in next-generation multijunction solar cells King, R. R.; Bhusari, D.; Boca, A. Progress in Photovoltaics: Research and Applications, Vol. 19, Issue 7 https://doi.org/10.1002/pip.1044	journal	November 2010
X-ray diffraction from low-dimensional structures Fewster, P. F. Semiconductor Science and Technology, Vol. 8, Issue 11 https://doi.org/10.1088/0268-1242/8/11/001	journal	November 1993
The Tension of Metallic Films Deposited by Electrolysis Stoney, G. G. Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 82, Issue 553 https://doi.org/10.1098/rspa.1909.0021	journal	May 1909
Heat transfer and mass transport in a multiwafer MOVPE reactor: modelling and experimental studies Bergunde, T.; Dauelsberg, M.; Kadinski, L. Journal of Crystal Growth, Vol. 170, Issue 1-4 https://doi.org/10.1016/S0022-0248(96)00551-9	journal	January 1997
Generation of misfit dislocations in semiconductors Marée, P. M. J.; Barbour, J. C.; van der Veen, J. F. Journal of Applied Physics, Vol. 62, Issue 11 https://doi.org/10.1063/1.339078	journal	December 1987
Organometallic vapor phase epitaxy growth of upright metamorphic multijunction solar cells Liu, X. Q.; Fetzer, C. M.; Rehder, E. Journal of Crystal Growth, Vol. 352, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.10.024	journal	August 2012
Thin Film Materials Freund, L. B.; Suresh, S. https://doi.org/10.1017/CBO9780511754715	book	July 2010
Band-gap control of GaInP using Sb as a surfactant Shurtleff, J. K.; Lee, R. T.; Fetzer, C. M. Applied Physics Letters, Vol. 75, Issue 13 https://doi.org/10.1063/1.124869	journal	September 1999
Design Flexibility of Ultrahigh Efficiency Four-Junction Inverted Metamorphic Solar Cells France, Ryan M.; Geisz, John F.; Garcia, Ivan IEEE Journal of Photovoltaics, Vol. 6, Issue 2 https://doi.org/10.1109/JPHOTOV.2015.2505182	journal	March 2016
Dislocation injection in strained multilayer structures Kamat, S. V.; Hirth, J. P. Journal of Applied Physics, Vol. 67, Issue 11 https://doi.org/10.1063/1.345074	journal	June 1990
Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight Guter, Wolfgang; Schöne, Jan; Philipps, Simon P. Applied Physics Letters, Vol. 94, Issue 22 https://doi.org/10.1063/1.3148341	journal	June 2009
Development of High-Bandgap AlGaInP Solar Cells Grown by Organometallic Vapor-Phase Epitaxy Perl, Emmett E.; Simon, John; Geisz, John F. IEEE Journal of Photovoltaics, Vol. 6, Issue 3 https://doi.org/10.1109/JPHOTOV.2016.2537543	journal	May 2016
Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell Geisz, John F.; Steiner, Myles A.; Jain, Nikhil IEEE Journal of Photovoltaics, Vol. 8, Issue 2 https://doi.org/10.1109/JPHOTOV.2017.2778567	journal	March 2018
Efficiency calculations of thin‐film GaAs solar cells on Si substrates Yamaguchi, Masafumi; Amano, Chikara Journal of Applied Physics, Vol. 58, Issue 9 https://doi.org/10.1063/1.335737	journal	November 1985
29.5%‐efficient GaInP/GaAs tandem solar cells Bertness, K. A.; Kurtz, Sarah R.; Friedman, D. J. Applied Physics Letters, Vol. 65, Issue 8 https://doi.org/10.1063/1.112171	journal	August 1994
Dislocations and strain relief in compositionally graded layers Tersoff, J. Applied Physics Letters, Vol. 62, Issue 7 https://doi.org/10.1063/1.108842	journal	February 1993
Analysis of tellurium as n-type dopant in GaInP: Doping, diffusion, memory effect and surfactant properties García, I.; Rey-Stolle, I.; Galiana, B. Journal of Crystal Growth, Vol. 298 https://doi.org/10.1016/j.jcrysgro.2006.10.099	journal	January 2007
Crosshatched surface morphology in strained III‐V semiconductor films Chang, Kevin H.; Gilbala, Ronald; Srolovitz, David J. Journal of Applied Physics, Vol. 67, Issue 9 https://doi.org/10.1063/1.344968	journal	May 1990
Progress in large area organometallic vapor phase epitaxy for III–V multijunction photovoltaics Fetzer, C. M.; Liu, X. Q.; Chang, J. Journal of Crystal Growth, Vol. 352, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.11.010	journal	August 2012
A 27.3% efficient Ga_0.5In_0.5P/GaAs tandem solar cell Olson, J. M.; Kurtz, S. R.; Kibbler, A. E. Applied Physics Letters, Vol. 56, Issue 7, p. 623-625 https://doi.org/10.1063/1.102717	journal	February 1990
High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction Geisz, J. F.; Kurtz, Sarah; Wanlass, M. W. Applied Physics Letters, Vol. 91, Issue 2, Article No. 023502 https://doi.org/10.1063/1.2753729	journal	July 2007
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions Geisz, J. F.; Friedman, D. J.; Ward, J. S. Applied Physics Letters, Vol. 93, Issue 12, Article No. 123505 https://doi.org/10.1063/1.2988497	journal	September 2008
High-efficiency quadruple junction solar cells using OMVPE with inverted metamorphic device structures Stan, M.; Aiken, D.; Cho, B. Journal of Crystal Growth, Vol. 312, Issue 8 https://doi.org/10.1016/j.jcrysgro.2009.10.059	journal	April 2010
1.6/1.1eV metamorphic GaInP/GaInAs solar cells grown by MOVPE on Ge Fetzer, C. M.; Yoon, H.; King, R. R. Journal of Crystal Growth, Vol. 276, Issue 1-2 https://doi.org/10.1016/j.jcrysgro.2004.11.401	journal	March 2005
Multijunction Concentrator Solar Cells: An Enabler for Low-Cost Photovoltaic Systems Luque, A.; Viacheslav, A. Springer Series in Optical Sciences https://doi.org/10.1007/978-3-540-68798-6_10	book	January 2007
Very high efficiency triple junction solar cells grown by MOVPE Stan, M.; Aiken, D.; Cho, B. Journal of Crystal Growth, Vol. 310, Issue 23 https://doi.org/10.1016/j.jcrysgro.2008.07.024	journal	November 2008
Tellurium doping of InGaP for tunnel junction applications in triple junction solar cells Ebert, C.; Pulwin, Z.; Byrnes, D. Journal of Crystal Growth, Vol. 315, Issue 1 https://doi.org/10.1016/j.jcrysgro.2010.09.050	journal	January 2011
A two‐junction cascade solar‐cell structure Bedair, S. M.; Lamorte, M. F.; Hauser, J. R. Applied Physics Letters, Vol. 34, Issue 1 https://doi.org/10.1063/1.90576	journal	January 1979
Large scale manufacturing of compound semiconductors by MOVPE Thompson, A. G.; Stall, R. A.; Kroll, W. Journal of Crystal Growth, Vol. 170, Issue 1-4 https://doi.org/10.1016/S0022-0248(96)00552-0	journal	January 1997
Metamorphic Ga _0.76 In _0.24 As/GaAs _0.75 Sb _0.25 tunnel junctions grown on GaAs substrates García, I.; Geisz, J. F.; France, R. M. Journal of Applied Physics, Vol. 116, Issue 7 https://doi.org/10.1063/1.4892773	journal	August 2014
Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation Quitoriano, Nathaniel J.; Fitzgerald, Eugene A. Journal of Applied Physics, Vol. 102, Issue 3 https://doi.org/10.1063/1.2764204	journal	August 2007
High‐efficiency (21.4%) Ga _0.75 In _0.25 As/GaAs ( E _g =1.15 eV) concentrator solar cells and the influence of lattice mismatch on performance Ludowise, M. J.; Dietze, W. T.; Boettcher, R. Applied Physics Letters, Vol. 43, Issue 5 https://doi.org/10.1063/1.94391	journal	September 1983
Highly Transparent Compositionally Graded Buffers for New Metamorphic Multijunction Solar Cell Designs Schulte, Kevin L.; France, Ryan M.; Geisz, John F. IEEE Journal of Photovoltaics, Vol. 7, Issue 1 https://doi.org/10.1109/JPHOTOV.2016.2619183	journal	January 2017
Control of misfit dislocation glide plane distribution during strain relaxation of CuPt-ordered GaInAs and GaInP France, R. M.; McMahon, W. E.; Norman, A. G. Journal of Applied Physics, Vol. 112, Issue 2 https://doi.org/10.1063/1.4739725	journal	July 2012
Ordering and disordering of doped Ga0.5In0.5P Kurtz, Sarah R.; Olson, J. M.; Friedman, D. J. Journal of Electronic Materials, Vol. 23, Issue 5 https://doi.org/10.1007/BF02671225	journal	May 1994
Ordering-enhanced dislocation glide in III-V alloys McMahon, William E.; Kang, Joongoo; France, Ryan M. Journal of Applied Physics, Vol. 114, Issue 20 https://doi.org/10.1063/1.4833244	journal	November 2013
Metamorphic GayIn1?yP/Ga1?xInxAs tandem solar cells for space and for terrestrial concentrator applications at C > 1000 suns Dimroth, F.; Beckert, R.; Meusel, M. Progress in Photovoltaics: Research and Applications, Vol. 9, Issue 3 https://doi.org/10.1002/pip.362	journal	January 2001
40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells King, R. R.; Law, D. C.; Edmondson, K. M. Applied Physics Letters, Vol. 90, Issue 18 https://doi.org/10.1063/1.2734507	journal	April 2007
Tellurium surfactant effects in the growth of lattice mismatched InAsxP1−x by metal organic vapor-phase epitaxy Newman, Frederick D.; Stan, Mark A.; Murray, Susan L. Journal of Crystal Growth, Vol. 272, Issue 1-4 https://doi.org/10.1016/j.jcrysgro.2004.08.083	journal	December 2004
Reduction of crosshatch roughness and threading dislocation density in metamorphic GaInP buffers and GaInAs solar cells France, R. M.; Geisz, J. F.; Steiner, M. A. Journal of Applied Physics, Vol. 111, Issue 10 https://doi.org/10.1063/1.4721367	journal	May 2012
Numerical analysis for high‐efficiency GaAs solar cells fabricated on Si substrates Yamaguchi, Masafumi; Amano, Chikara; Itoh, Yoshio Journal of Applied Physics, Vol. 66, Issue 2 https://doi.org/10.1063/1.343520	journal	July 1989
Investigations on Al$_{\bm x}$Ga$_{\bm {1-x}}$As Solar Cells Grown by MOVPE Heckelmann, Stefan; Lackner, David; Karcher, Christian IEEE Journal of Photovoltaics, Vol. 5, Issue 1 https://doi.org/10.1109/JPHOTOV.2014.2367869	journal	January 2015
Carbon doping and growth rate reduction by CCl ₄ during metalorganic chemical‐vapor deposition of GaAs Lee, Jeong‐Seok; Kim, In; Choe, Byung‐Doo Journal of Applied Physics, Vol. 76, Issue 9 https://doi.org/10.1063/1.357219	journal	November 1994
Investigation of strain‐symmetrized and pseudomorphic Si _m Ge _n superlattices by x‐ray reciprocal space mapping Koppensteiner, E.; Bauer, G.; Kibbel, H. Journal of Applied Physics, Vol. 76, Issue 6 https://doi.org/10.1063/1.357478	journal	September 1994
Demonstration of Multiple Substrate Reuses for Inverted Metamorphic Solar Cells Adams, Jessica; Elarde, Victor; Hains, Alexander IEEE Journal of Photovoltaics, Vol. 3, Issue 2 https://doi.org/10.1109/JPHOTOV.2013.2245722	journal	April 2013
Enhanced Current Collection in 1.7 eV GaInAsP Solar Cells Grown on GaAs by Metalorganic Vapor Phase Epitaxy Jain, Nikhil; Geisz, John F.; France, Ryan M. IEEE Journal of Photovoltaics, Vol. 7, Issue 3 https://doi.org/10.1109/JPHOTOV.2017.2655035	journal	May 2017
Critical thickness of atomically ordered III-V alloys France, R. M.; McMahon, W. E.; Guthrey, H. L. Applied Physics Letters, Vol. 107, Issue 15 https://doi.org/10.1063/1.4933092	journal	October 2015
High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE Fetzer, C. M.; King, R. R.; Colter, P. C. Journal of Crystal Growth, Vol. 261, Issue 2-3 https://doi.org/10.1016/j.jcrysgro.2003.11.026	journal	January 2004
GaAsP solar cells on GaP/Si with low threading dislocation density Yaung, Kevin Nay; Vaisman, Michelle; Lang, Jordan Applied Physics Letters, Vol. 109, Issue 3 https://doi.org/10.1063/1.4959825	journal	July 2016

Similar Records

Metamorphic Epitaxy for Multijunction Solar Cells

Journal Article · 2016 · MRS Bulletin · OSTI ID:1245126

Printed Assemblies of Microscale Triple-Junction (3J) Inverted Metamorphic (IMM) GaInP/GaAs/InGaAs Solar Cells

Conference · 2018 · OSTI ID:1558580

Printed assemblies of microscale triple–junction inverted metamorphic GaInP/GaAs/InGaAs solar cells

Journal Article · 2019 · Progress in Photovoltaics · OSTI ID:1506617

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
Stoney's equation
in situ monitoring
inverted metamorphic structure
metal organic vapor phase epitaxy
metamorphic growth
multijunction III-V solar cells
reactor technology
upright metamorphic structure
vertical chambers

Chapter 5: Metamorphic Growth and Multijunction III-V Solar Cells

Citation Formats

References (64)

Similar Records

Related Subjects