Characterization of FeCl3 Intercalation Doped CVD Few-Layer Graphene
- Univ. of California, Santa Barbara, CA (United States)
Historically, intercalation doping has been theoretically and experimentally studied on Chemical Vapor Deposition (CVD) synthesized few-layer graphene. Density Functional Theory calculations identified FeCl3 as a good dopant to reduce the sheet resistance of few-layer graphene. A simple vapor transfer approach is employed to dope graphene. The successful doping is confirmed by the Raman spectra as well as electrical measurements. After doping, graphene shows p-type conducting behavior and its conductance is significantly enhanced compared with that of undoped graphene. 3-layer graphene exhibited a sheet resistance of 40 Ω/$$\square$$, while 4-layer graphene has even smaller sheet resistance of 20 Ω/$$\square$$, with transmittance ≥ 90% for both cases. which offer the best combination of sheet resistance and transmittance among all previously reported transparent conductors.
- Research Organization:
- Stanford Univ., CA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- Grant/Contract Number:
- EE0004946
- OSTI ID:
- 1579875
- Journal Information:
- IEEE Electron Device Letters, Vol. 37, Issue 9; ISSN 0741-3106
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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