Characterization of FeCl₃ Intercalation Doped CVD Few-Layer Graphene

Journal Article · Tue Aug 02 00:00:00 EDT 2016 · IEEE Electron Device Letters

DOI:https://doi.org/10.1109/LED.2016.2597099· OSTI ID:1579875

Liu, Wei ^[1]; Kang, Jiahao ^[1]; Banerjee, Kaustav  ^[1]

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1. Univ. of California, Santa Barbara, CA (United States)

Historically, intercalation doping has been theoretically and experimentally studied on Chemical Vapor Deposition (CVD) synthesized few-layer graphene. Density Functional Theory calculations identified FeCl₃ as a good dopant to reduce the sheet resistance of few-layer graphene. A simple vapor transfer approach is employed to dope graphene. The successful doping is confirmed by the Raman spectra as well as electrical measurements. After doping, graphene shows p-type conducting behavior and its conductance is significantly enhanced compared with that of undoped graphene. 3-layer graphene exhibited a sheet resistance of 40 Ω/$$\square$$, while 4-layer graphene has even smaller sheet resistance of 20 Ω/$$\square$$, with transmittance ≥ 90% for both cases. which offer the best combination of sheet resistance and transmittance among all previously reported transparent conductors.

• Research Organization: Stanford Univ., CA (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
• Grant/Contract Number: EE0004946
• OSTI ID: 1579875
• Journal Information: IEEE Electron Device Letters, Vol. 37, Issue 9; ISSN 0741-3106
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
Chemical vapor deposition
few-layer graphene
intercalation doping
solar cells
transparent electrodes