Solution-based electrical doping of semiconducting polymer films over a limited depth

Kolesov, Vladimir A.; Fuentes-Hernandez, Canek; Chou, Wen -Fang; Aizawa, Naoya; Larrain, Felipe A.; Wang, Ming; Perrotta, Alberto; Choi, Sangmoo; Graham, Samuel; Bazan, Guillermo C.; Nguyen, Thuc -Quyen; Marder, Seth R.; Kippelen, Bernard

doi:10.1038/NMAT4818

Title: Solution-based electrical doping of semiconducting polymer films over a limited depth

Journal Article · Mon Dec 05 00:00:00 EST 2016 · Nature Materials

DOI:https://doi.org/10.1038/NMAT4818· OSTI ID:1579840

Kolesov, Vladimir A. ^[1]; Fuentes-Hernandez, Canek ^[1]; Chou, Wen -Fang ^[1];

^[2]; Larrain, Felipe A. ^[1]; Wang, Ming ^[3]; Perrotta, Alberto ^[4]; Choi, Sangmoo ^[1]; Graham, Samuel ^[1]; Bazan, Guillermo C. ^[3]; Nguyen, Thuc -Quyen ^[3]; Marder, Seth R. ^[1]; Kippelen, Bernard ^[1]

Georgia Inst. of Technology, Atlanta, GA (United States)
Kyushu Univ., Fukuoka (Japan)
Univ. of California, Santa Barbara, CA (United States)
Eindhoven Univ. of Technology, Eindhoven (Netherlands)

Solution-based electrical doping protocols may allow more versatility in the design of organic electronic devices; yet, controlling the diffusion of dopants in organic semiconductors and their stability has proven challenging. Here we present a solution-based approach for electrical p-doping of films of donor conjugated organic semiconductors and their blends with acceptors over a limited depth with a decay constant of 10–20 nm by post-process immersion into a polyoxometalate solution (phosphomolybdic acid, PMA) in nitromethane. PMA-doped films show increased electrical conductivity and work function, reduced solubility in the processing solvent, and improved photo-oxidative stability in air. Here, this approach is applicable to a variety of organic semiconductors used in photovoltaics and field-effect transistors. PMA doping over a limited depth of bulk heterojunction polymeric films, in which amine-containing polymers were mixed in the solution used for film formation, enables single-layer organic photovoltaic devices, processed at room temperature, with power conversion efficiencies up to 5.9 ± 0.2% and stable performance on shelf-lifetime studies at 60 °C for at least 280 h.

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Research Organization:: Stanford Univ., CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: EE0004946; N00014-14-1-0580; N00014-16-1-2520; N00014-04-1-0313

OSTI ID:: 1579840

Journal Information:: Nature Materials, Vol. 16, Issue 4; ISSN 1476-1122

Publisher:: Springer Nature - Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 98 works

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