A Two-Dimensional MoS2 Catalysis Transistor by Solid-State Ion Gating Manipulation and Adjustment (SIGMA)

Wu, Yecun; Ringe, Stefan; Wu, Chun -Lan; Chen, Wei; Yang, Ankun; Chen, Hao; Tang, Michael; Zhou, Guangmin; Hwang, Harold Y.; Chan, Karen; Cui, Yi

doi:10.1021/acs.nanolett.9b02888

Title: A Two-Dimensional MoS₂ Catalysis Transistor by Solid-State Ion Gating Manipulation and Adjustment (SIGMA)

Journal Article · Mon Sep 09 00:00:00 EDT 2019 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.9b02888· OSTI ID:1576953

^[1]; Ringe, Stefan ^[2];

^[3];

^[3]; Tang, Michael ^[2];

^[3]; Hwang, Harold Y. ^[4];

^[5];

^[6]

Stanford Univ., Stanford, CA (United States). Dept. of Electrical Engineering
Stanford Univ., Stanford, CA (United States). SUNCAT Center for Interface Science and Catalysis; SLAC National Accelerator Lab., Menlo Park, CA (United States). SUNCAT Center for Interface Science and Catalysis
Stanford Univ., Stanford, CA (United States). Dept. of Materials Science and Engineering
Stanford Univ., Stanford, CA (United States). Dept. of Applied Physics; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Science
Technical Univ. of Denmark, Kongens Lyngby (Denmark). CatTheory Center, Dept. of Physics
Stanford Univ., Stanford, CA (United States). Dept. of Materials Science and Engineering; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Science

A variety of methods including tuning chemical compositions, structures, crystallinity, defects and strain, and electrochemical intercalation have been demonstrated to enhance the catalytic activity. However, none of these tuning methods provide direct dynamical control during catalytic reactions. Here we propose a new method to tune the activity of catalysts through solid-state ion gating manipulation and adjustment (SIGMA) using a catalysis transistor. SIGMA can electrostatically dope the surface of catalysts with a high electron concentration over 5 × 10¹³ cm^–2 and thus modulate both the chemical potential of the reaction intermediates and their electrical conductivity. The hydrogen evolution reaction (HER) on both pristine and defective MoS₂ were investigated as model reactions. Furthermore, our theoretical and experimental results show that the overpotential at 10 mA/cm² and Tafel slope can be in situ, continuously, dynamically, and reversibly tuned over 100 mV and around 100 mV/dec, respectively.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-76SF00515; 9455

OSTI ID:: 1576953

Journal Information:: Nano Letters, Vol. 19, Issue 10; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 32 works

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