Effect of selenium and chlorine co-passivation in polycrystalline CdSeTe devices

Guo, Jinglong; Mannodi-Kanakkithodi, Arun; Sen, Fatih G.; Schwenker, Eric; Barnard, E. S.; Munshi, Amit; Sampath, W.; Chan, Maria K. Y.; Klie, Robert F.

doi:10.1063/1.5123169

Title: Effect of selenium and chlorine co-passivation in polycrystalline CdSeTe devices

Journal Article · Mon Oct 07 00:00:00 EDT 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5123169· OSTI ID:1576757

Guo, Jinglong ^[1];

^[2]; Sen, Fatih G. ^[2]; Schwenker, Eric ^[2];

^[3]; Munshi, Amit ^[4]; Sampath, W. ^[4];

^[2]; Klie, Robert F. ^[1]

Univ. of Illinois at Chicago, Chicago, IL (United States)
Argonne National Lab. (ANL), Lemont, IL (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Colorado State University, Fort Collins, CO (United States)

CdTe-based solar cell efficiency has rapidly improved over the last few years. Some of the reasons have been a change to the absorber composition including the incorporation of selenium, and better front contact and emitter materials in CdTe photovoltaic devices. In addition to the increase in short-circuit current by reducing the bandgap, Se plays other important roles in passivation of defects thus improving the conversion efficiency of CdSeTe/CdTe graded absorber photovoltaic devices. Here, we combine structural and optical characterizations with first principles calculations to investigate the role of Se and Cl segregation in CdSeTe devices. We find that in the presence of Se and Cl, the minority carrier lifetime improves due to a reduction of midgap defect states. We also correlate this effect with defect passivation in CdSeTe devices and suggest innovative ways to further improve CdTe-based photovoltaic efficiency.

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Research Organization:: University of Illinois, Chicago, IL (United States); Colorado State Univ., Fort Collins, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Contributing Organization:: Center for Nanoscale Materials, Argonne National Laboratory; Lawrence Berkeley National Laboratory

Grant/Contract Number:: EE0007545; EE0008557; EE00007545; AC02-06CH11357; AC02-05CH11231; EE0008177

OSTI ID:: 1576757

Alternate ID(s):: OSTI ID: 1570059; OSTI ID: 1670784

Journal Information:: Applied Physics Letters, Vol. 115, Issue 15; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 25 works

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