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Title: Synthesis of Armchair Graphene Nanoribbons on Germanium-on-Silicon

Abstract

The synthesis of graphene nanoribbons on complementary metal– oxide–semiconductor-compatible substrates is a significant challenge hindering their integration into commercial semiconductor electronics. Here, the bottom-up synthesis of armchair graphene nanoribbons on epilayers of Ge on Si(001) via chemical vapor deposition is demonstrated. The synthesis leverages the previous discovery that graphene crystal growth can be driven with an extreme shape anisotropy on Ge(001) surfaces to directly form nanoribbons. However, compared to nanoribbon synthesis on Ge(001), synthesis on Ge/Si(001) is complicated by the possibility of Si diffusion to the Ge surface and the presence of threading dislocations. Herein, we demonstrate that similar to Ge(001), armchair nanoribbons with faceted edges and sub-10 nm widths can indeed be grown on Ge/Si(001). The nanoribbon synthesis proceeds faster than the diffusion of Si to the Ge surface if a sufficiently thick Ge epilayer is used (e.g., 3 μm), thereby avoiding competing reactions that form SiC. Moreover, threading dislocations in the Ge epilayer are not observed to affect the nucleation or anisotropic growth kinetics of the nanoribbons. Furthermore, these results demonstrate that previous successes in graphene nanoribbon synthesis on Ge(001) can be extended to Si(001) by using epilayers of Ge, motivating the future exploration of this promising platformmore » for hybrid semiconducting graphene/Si electronics.« less

Authors:
ORCiD logo [1];  [2];  [3]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [4];  [1]
  1. Univ. of Wisconsin−Madison, Madison, WI (United States). Dept. of Materials Science & Engineering
  2. IHP—Libniz-Insitut für Innovative Mikroelektronik, Frankfurt (Oder) (Germany)
  3. National Inst. of Aerospace, Hampton, VA (United States)
  4. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1576744
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Physical Chemistry. C
Additional Journal Information:
Journal Volume: 123; Journal Issue: 30; Journal ID: ISSN 1932-7447
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; Ge/Si(001); Graphene; chemical vapor deposition; nanoelectronics; nanoribbons; post-CMOS; threading dislocations

Citation Formats

Saraswat, Vivek, Yamamoto, Yuji, Kim, Hyun Jung, Jacobberger, Robert M., Jinkins, Katherine R., Way, Austin J., Guisinger, Nathan P., and Arnold, Michael S. Synthesis of Armchair Graphene Nanoribbons on Germanium-on-Silicon. United States: N. p., 2019. Web. doi:10.1021/acs.jpcc.9b04390.
Saraswat, Vivek, Yamamoto, Yuji, Kim, Hyun Jung, Jacobberger, Robert M., Jinkins, Katherine R., Way, Austin J., Guisinger, Nathan P., & Arnold, Michael S. Synthesis of Armchair Graphene Nanoribbons on Germanium-on-Silicon. United States. doi:10.1021/acs.jpcc.9b04390.
Saraswat, Vivek, Yamamoto, Yuji, Kim, Hyun Jung, Jacobberger, Robert M., Jinkins, Katherine R., Way, Austin J., Guisinger, Nathan P., and Arnold, Michael S. Tue . "Synthesis of Armchair Graphene Nanoribbons on Germanium-on-Silicon". United States. doi:10.1021/acs.jpcc.9b04390.
@article{osti_1576744,
title = {Synthesis of Armchair Graphene Nanoribbons on Germanium-on-Silicon},
author = {Saraswat, Vivek and Yamamoto, Yuji and Kim, Hyun Jung and Jacobberger, Robert M. and Jinkins, Katherine R. and Way, Austin J. and Guisinger, Nathan P. and Arnold, Michael S.},
abstractNote = {The synthesis of graphene nanoribbons on complementary metal– oxide–semiconductor-compatible substrates is a significant challenge hindering their integration into commercial semiconductor electronics. Here, the bottom-up synthesis of armchair graphene nanoribbons on epilayers of Ge on Si(001) via chemical vapor deposition is demonstrated. The synthesis leverages the previous discovery that graphene crystal growth can be driven with an extreme shape anisotropy on Ge(001) surfaces to directly form nanoribbons. However, compared to nanoribbon synthesis on Ge(001), synthesis on Ge/Si(001) is complicated by the possibility of Si diffusion to the Ge surface and the presence of threading dislocations. Herein, we demonstrate that similar to Ge(001), armchair nanoribbons with faceted edges and sub-10 nm widths can indeed be grown on Ge/Si(001). The nanoribbon synthesis proceeds faster than the diffusion of Si to the Ge surface if a sufficiently thick Ge epilayer is used (e.g., 3 μm), thereby avoiding competing reactions that form SiC. Moreover, threading dislocations in the Ge epilayer are not observed to affect the nucleation or anisotropic growth kinetics of the nanoribbons. Furthermore, these results demonstrate that previous successes in graphene nanoribbon synthesis on Ge(001) can be extended to Si(001) by using epilayers of Ge, motivating the future exploration of this promising platform for hybrid semiconducting graphene/Si electronics.},
doi = {10.1021/acs.jpcc.9b04390},
journal = {Journal of Physical Chemistry. C},
issn = {1932-7447},
number = 30,
volume = 123,
place = {United States},
year = {2019},
month = {7}
}

Journal Article:
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