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Title: Variations in the Chemical and Electronic Impact of Post-Deposition Treatments on Cu(In,Ga)(S,Se)2 Absorbers

Journal Article · · ACS Applied Energy Materials
ORCiD logo [1];  [2];  [1]; ORCiD logo [3];  [1];  [4];  [5];  [4]
  1. Univ. of Nevada, Las Vegas, NV (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  4. Univ. of Nevada, Las Vegas, NV (United States); Karlsruhe Inst. of Technology (KIT) (Germany)
  5. STION Corp., San Jose, CA (United States)

We present a comparative study that focuses on the variability of post-deposition treatments (NaF-PDT and KF-PDT) and their impact on the chemical and electronic structure of chalcopyrite thin film solar cell absorbers. For this purpose, two 'extreme' chalcopyrite absorber systems are studied: Cu(In,Ga)(S,Se)2 with industrial relevance (STION), and Cu(In,Ga)Se2 with 'research grade' properties (NREL). Samples were subjected to NaF-PDT and KF-PDT, and investigated using x-ray and ultra-violet photoelectron spectroscopy, Auger electron spectroscopy, as well as synchrotron-based soft x-ray emission spectroscopy. Considerably different alkali-induced effects are found for the two systems. In particular, we only detect a PDT-related Cu depletion on the NREL absorber surfaces (and only on those leading to high-efficiency devices). We also observe a reduction in the surface S/Se ratio for all alkali-treated STION absorbers, in addition to the presence of sulfates after the KF-PDT. After processing the PDT absorbers to fully operating cells, we find that the PDT temperature has a significant impact on the resulting device efficiencies - both the NREL and STION absorbers can result in high-efficiency and low-efficiency devices, depending on KF-PDT processing parameters. The absorbers of low-efficiency KF-PDT devices show the largest Cu surface content after PDT, causing the valence band maximum to be closer to the Fermi energy, thus possibly leading to less efficient charge-carrier separation and/or enhanced recombination at the interface. Finally, we find varying degrees of Na, K, and/or F residuals on the different absorber surfaces after PDT, indicating a potential 'hidden' parameter in employing PDTs for improved solar cell performance.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
Grant/Contract Number:
AC02-05CH11231; AC36-08GO28308
OSTI ID:
1594942
Alternate ID(s):
OSTI ID: 1576486
Report Number(s):
NREL/JA-5K00-75198; ark:/13030/qt9965x7nn
Journal Information:
ACS Applied Energy Materials, Vol. 2, Issue 2; ISSN 2574-0962
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science