In-situ Annealing Studies of Radiation Induced Defects in InAs/InAsSb Type-II Superlattices under Ion Irradiation.
Conference
·
OSTI ID:1575172
- SNL
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1575172
- Report Number(s):
- SAND2018-3886C; 670113
- Resource Relation:
- Conference: Proposed for presentation at the Hardened Electronics And Radiation Technology held April 16-20, 2018 in Tucson, Arizona, United States of America.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Radiation Induced Defects in InAs/InAsSb Type II Superlattices Characterized with Time-resolved Microwave Reflectance and DFT.
Comparing Radiation Induced Lifetime Degradation in InAs/InAsSb Type-II Superlattices using 4.5 and 63 MeV Proton Irradiations.
Effects of 4.5 MeV and 63 MeV Proton Irradiation on Carrier Lifetime of InAs/InAsSb Type-II Superlattices.
Conference
·
2018
·
OSTI ID:1532823
+6 more
Comparing Radiation Induced Lifetime Degradation in InAs/InAsSb Type-II Superlattices using 4.5 and 63 MeV Proton Irradiations.
Conference
·
2017
·
OSTI ID:1464086
+5 more
Effects of 4.5 MeV and 63 MeV Proton Irradiation on Carrier Lifetime of InAs/InAsSb Type-II Superlattices.
Conference
·
2017
·
OSTI ID:1464068
+11 more