Thermal neutron-induced single-event upsets in microcontrollers containing boron-10

Journal Article · Wed Nov 06 00:00:00 EST 2019 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/TNS.2019.2951996· OSTI ID:1574802

Auden, Elizabeth C. ^[1]; Quinn, Heather M. ^[1]; Wender, Stephen A. ^[1]; O'Donnell, John M. ^[1]; Lisowski, Paul W. ^[1]; George, Jeffrey S. ^[1]; Xu, Ning ^[1]; Black, Dolores A. ^[2]; Black, Jeffrey D. ^[2]

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1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000; 89233218CNA000001
• OSTI ID: 1574802
• Alternate ID(s): OSTI ID: 1608680
• Report Number(s): SAND2019-7606J; LA-UR-19-26094; 677058; TRN: US2001204
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 67, Issue 1; Conference: Nuclear and Space Radiation Effects Conference (NSREC) ; 2019-07-08 - 2019-07-12 ;; ISSN 0018-9499
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

73 NUCLEAR PHYSICS AND RADIATION PHYSICS
microcontrollers
neutron
radiation effects
semiconductor device doping
semiconductor device modeling
single event effects
SRAM cells