Strain tolerance of two-dimensional crystal growth on curved surfaces

Wang, Kai; Puretzky, Alexander A.; Hu, Zhili; Srijanto, Bernadeta R.; Li, Xufan; Gupta, Nitant; Yu, Henry; Tian, Mengkun; Mahjouri-Samani, Masoud; Gao, Xiang; Oyedele, Akinola; Rouleau, Christopher M.; Eres, Gyula; Yakobson, Boris I.; Yoon, Mina; Xiao, Kai; Geohegan, David B.

doi:10.1126/sciadv.aav4028

Title: Strain tolerance of two-dimensional crystal growth on curved surfaces

Journal Article · Fri May 31 00:00:00 EDT 2019 · Science Advances

DOI:https://doi.org/10.1126/sciadv.aav4028· OSTI ID:1574020

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^[3]; Tian, Mengkun ^[4];

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^[6]; Yakobson, Boris I. ^[3]; Yoon, Mina ^[1]; Xiao, Kai ^[1];

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Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science
Nanjing Univ. of Aeronautics and Astronautics, Nanjing (China). College of Aerospace Engineering
Rice Univ., Houston, TX (United States). Dept. of Materials Science and NanoEngineering
Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science; Auburn Univ., Auburn, AL (United States). Dept. of Electrical and Computer Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Div.

Two-dimensional (2D) crystal growth over substrate features is fundamentally guided by the Gauss-Bonnet theorem which mandates that rigid, planar crystals cannot conform to surfaces with nonzero Gaussian curvature. Here we reveal how topographic curvature of lithographically-designed substrate features govern the strain and growth dynamics of triangular WS2 monolayer single crystals. Single crystals grow conformally without strain over deep trenches and other features with zero Gaussian curvature, however features with nonzero Gaussian curvature can easily impart sufficient strain to initiate grain boundaries and fractured growth in different directions. Within a strain tolerant regime, however, triangular single crystals can accommodate considerable (< 1.1%) localized strain exerted by surface features that shift the band gap up to 150 meV. Within this regime the crystal growth accelerates in specific directions, which we describe using a growth model. These results present a novel strategy to strain-engineer the growth directions and optoelectronic properties of 2D crystals.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1574020

Alternate ID(s):: OSTI ID: 1607203

Journal Information:: Science Advances, Vol. 5, Issue 5; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 40 works

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