Charge Transfer and Built-in Electric Fields Between a Crystalline Oxide and Silicon

doi:10.1103/PhysRevLett.123.026805

Title: Charge Transfer and Built-in Electric Fields Between a Crystalline Oxide and Silicon

Abstract

We report charge transfer and built-in electric fields across the epitaxial SrNbxTi1-xO3-d / Si(001) interface. Electrical transport measurements indicate the formation of a hole gas in the Si and the presence of built-in fields. Hard x-ray photoelectron measurements reveal pronounced asymmetries in core-level spectra that arise from these built-in fields. Analysis of these asymmetries enables built-in fields to be spatially mapped across the heterojunction. The demonstration of tunable charge transfer, built-in fields, and the spatial mapping of the latter, lays the groundwork for the development of electrically coupled, functional heterojunctions.

Authors:

Lim, Zhenghui ^[1]; Quackenbush, Nicholas ^[2]; Penn, Aubrey ^[3]; Chrysler, M ^[1]; Bowden, Mark E. ^[4];

^[4]; Ablett, James ^[5]; Lee, Tien-Lin ^[6]; LeBeau, James M. ^[3]; Woicik, Joseph C. ^[2];

^[4];

^[4]; Ngai, Joseph ^[1]

University of Texas at Arlington
National Institute of Standards and Technology
North Carolina State University
BATTELLE (PACIFIC NW LAB)
Synchrotron SOLEIL
Diamond Light Source, Ltd.

Publication Date:: 2019-07-11

Research Org.:: Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1573798

Report Number(s):: PNNL-SA-144010

DOE Contract Number:: AC05-76RL01830

Resource Type:: Journal Article

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 123; Journal Issue: 2

Country of Publication:: United States

Language:: English

Citation Formats


                    Lim, Zhenghui, Quackenbush, Nicholas, Penn, Aubrey, Chrysler, M, Bowden, Mark E., Zhu, Zihua, Ablett, James, Lee, Tien-Lin, LeBeau, James M., Woicik, Joseph C., Sushko, Petr V., Chambers, Scott A., and Ngai, Joseph. Charge Transfer and Built-in Electric Fields Between a Crystalline Oxide and Silicon.  United States: N. p., 2019. 
        Web.  doi:10.1103/PhysRevLett.123.026805.

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                    Lim, Zhenghui, Quackenbush, Nicholas, Penn, Aubrey, Chrysler, M, Bowden, Mark E., Zhu, Zihua, Ablett, James, Lee, Tien-Lin, LeBeau, James M., Woicik, Joseph C., Sushko, Petr V., Chambers, Scott A., & Ngai, Joseph. Charge Transfer and Built-in Electric Fields Between a Crystalline Oxide and Silicon.  United States.  doi:10.1103/PhysRevLett.123.026805.

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                    Lim, Zhenghui, Quackenbush, Nicholas, Penn, Aubrey, Chrysler, M, Bowden, Mark E., Zhu, Zihua, Ablett, James, Lee, Tien-Lin, LeBeau, James M., Woicik, Joseph C., Sushko, Petr V., Chambers, Scott A., and Ngai, Joseph. Thu .  
        "Charge Transfer and Built-in Electric Fields Between a Crystalline Oxide and Silicon".  United States.  doi:10.1103/PhysRevLett.123.026805.

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@article{osti_1573798,

  title        = {Charge Transfer and Built-in Electric Fields Between a Crystalline Oxide and Silicon},

  author       = {Lim, Zhenghui and Quackenbush, Nicholas and Penn, Aubrey and Chrysler, M and Bowden, Mark E. and Zhu, Zihua and Ablett, James and Lee, Tien-Lin and LeBeau, James M. and Woicik, Joseph C. and Sushko, Petr V. and Chambers, Scott A. and Ngai, Joseph},

  abstractNote = {We report charge transfer and built-in electric fields across the epitaxial SrNbxTi1-xO3-d / Si(001) interface. Electrical transport measurements indicate the formation of a hole gas in the Si and the presence of built-in fields. Hard x-ray photoelectron measurements reveal pronounced asymmetries in core-level spectra that arise from these built-in fields. Analysis of these asymmetries enables built-in fields to be spatially mapped across the heterojunction. The demonstration of tunable charge transfer, built-in fields, and the spatial mapping of the latter, lays the groundwork for the development of electrically coupled, functional heterojunctions.},

  doi          = {10.1103/PhysRevLett.123.026805},

  journal      = {Physical Review Letters},
number       = 2,

  volume       = 123,

  place        = {United States},

  year         = {2019},

  month        = {7}

}

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DOI: 10.1103/PhysRevLett.123.026805

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Title: Charge Transfer and Built-in Electric Fields Between a Crystalline Oxide and Silicon

Abstract

Citation Formats

Two-Dimensional Magnetotransport in the Extreme Quantum Limit journal, May 1982

Crystalline Oxides on Silicon: The First Five Monolayers journal, October 1998

Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide journal, July 2001

Anomalous lattice expansion of coherently strained SrTiO 3 thin films grown on Si ( 001 ) by kinetically controlled sequential deposition journal, January 2006

Field-effect transistors with SrHfO3 as gate oxide journal, July 2006

Atomic layer deposition of crystalline SrHfO 3 directly on Ge (001) for high- k dielectric applications journal, February 2015

A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst journal, December 2014

Solar hydrogen production using epitaxial SrTiO 3 on a GaAs photovoltaic journal, January 2017

Electrically coupling complex oxides to semiconductors: A route to novel material functionalities journal, January 2017

Hall Mobility in SrTi O 3 journal, September 1967

Revolving scanning transmission electron microscopy: Correcting sample drift distortion without prior knowledge journal, March 2014

Widths of the Atomic k–n7 Levels journal, January 2001

Towards Two-Dimensional Metallic Behavior at LaAlO 3 / SrTiO 3 Interfaces journal, May 2009

Atomic and electronic structure of the S i / S r T i O 3 interface journal, September 2003

Complex band structure and the band alignment problem at the Si–high- k dielectric interface journal, May 2005

Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd 3 As 2 Nanoplates journal, May 2016

Layer-resolved band bending at the n − SrTi O 3 ( 001 ) / p − Ge ( 001 ) interface journal, September 2018

Atomic and electronic surface structures of dopants in oxides: STM and XPS of Nb- and La-doped SrTiO 3 (001) journal, January 2011

Many-electron singularity in X-ray photoemission and X-ray line spectra from metals journal, February 1970

Silicide formation at the Ti/Si(111) interface: Diffusion parameters and behavior at elevated temperatures journal, January 1987

Oxygen diffusion and precipitation in Czochralski silicon journal, June 2000

Theory of semiconductor heterojunctions: The role of quantum dipoles journal, October 1984

Surface depletion in doped SrTiO3 thin films journal, March 2004

Electric field tuned crossover from classical to weakly localized quantum transport in electron doped SrTiO 3 journal, June 2010

Band offset and structure of SrTiO3 /Si(001) heterojunctions journal, May 2001

Tuning the work function in transition metal oxides and their heterostructures journal, June 2016

Dielectric properties of sputtered SrTiO 3 films journal, May 1994

Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface journal, February 2015

Two-Dimensional Magnetotransport in the Extreme Quantum Limit
journal, May 1982

Crystalline Oxides on Silicon: The First Five Monolayers
journal, October 1998

Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide
journal, July 2001

Anomalous lattice expansion of coherently strained ${SrTiO}_{3}$ thin films grown on $Si (001)$ by kinetically controlled sequential deposition
journal, January 2006

Field-effect transistors with SrHfO3 as gate oxide
journal, July 2006

Atomic layer deposition of crystalline SrHfO ₃ directly on Ge (001) for high- k dielectric applications
journal, February 2015

A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst
journal, December 2014

Solar hydrogen production using epitaxial SrTiO ₃ on a GaAs photovoltaic
journal, January 2017

Electrically coupling complex oxides to semiconductors: A route to novel material functionalities
journal, January 2017

Hall Mobility in SrTi $O_{3}$
journal, September 1967

Revolving scanning transmission electron microscopy: Correcting sample drift distortion without prior knowledge
journal, March 2014

Widths of the Atomic k–n7 Levels
journal, January 2001

Towards Two-Dimensional Metallic Behavior at ${LaAlO}_{3} / {SrTiO}_{3}$ Interfaces
journal, May 2009

Atomic and electronic structure of the ${S i / S r T i O}_{3}$ interface
journal, September 2003

Complex band structure and the band alignment problem at the Si–high- $k$ dielectric interface
journal, May 2005

Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd ₃ As ₂ Nanoplates
journal, May 2016

Layer-resolved band bending at the $n - SrTi O_{3} (001) / p - Ge (001)$ interface
journal, September 2018

Atomic and electronic surface structures of dopants in oxides: STM and XPS of Nb- and La-doped SrTiO $_{3}$ (001)
journal, January 2011

Many-electron singularity in X-ray photoemission and X-ray line spectra from metals
journal, February 1970

Silicide formation at the Ti/Si(111) interface: Diffusion parameters and behavior at elevated temperatures
journal, January 1987

Oxygen diffusion and precipitation in Czochralski silicon
journal, June 2000

Theory of semiconductor heterojunctions: The role of quantum dipoles
journal, October 1984

Surface depletion in doped SrTiO3 thin films
journal, March 2004

Electric field tuned crossover from classical to weakly localized quantum transport in electron doped ${SrTiO}_{3}$
journal, June 2010

Band offset and structure of SrTiO3 /Si(001) heterojunctions
journal, May 2001

Tuning the work function in transition metal oxides and their heterostructures
journal, June 2016

Dielectric properties of sputtered ${SrTiO}_{3}$ films
journal, May 1994

Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface
journal, February 2015