skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Charge Transfer and Built-in Electric Fields Between a Crystalline Oxide and Silicon

Abstract

We report charge transfer and built-in electric fields across the epitaxial SrNbxTi1-xO3-d / Si(001) interface. Electrical transport measurements indicate the formation of a hole gas in the Si and the presence of built-in fields. Hard x-ray photoelectron measurements reveal pronounced asymmetries in core-level spectra that arise from these built-in fields. Analysis of these asymmetries enables built-in fields to be spatially mapped across the heterojunction. The demonstration of tunable charge transfer, built-in fields, and the spatial mapping of the latter, lays the groundwork for the development of electrically coupled, functional heterojunctions.

Authors:
 [1];  [2];  [3];  [1];  [4]; ORCiD logo [4];  [5];  [6];  [3];  [2]; ORCiD logo [4]; ORCiD logo [4];  [1]
  1. University of Texas at Arlington
  2. National Institute of Standards and Technology
  3. North Carolina State University
  4. BATTELLE (PACIFIC NW LAB)
  5. Synchrotron SOLEIL
  6. Diamond Light Source, Ltd.
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1573798
Report Number(s):
PNNL-SA-144010
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 123; Journal Issue: 2
Country of Publication:
United States
Language:
English

Citation Formats

Lim, Zhenghui, Quackenbush, Nicholas, Penn, Aubrey, Chrysler, M, Bowden, Mark E., Zhu, Zihua, Ablett, James, Lee, Tien-Lin, LeBeau, James M., Woicik, Joseph C., Sushko, Petr V., Chambers, Scott A., and Ngai, Joseph. Charge Transfer and Built-in Electric Fields Between a Crystalline Oxide and Silicon. United States: N. p., 2019. Web. doi:10.1103/PhysRevLett.123.026805.
Lim, Zhenghui, Quackenbush, Nicholas, Penn, Aubrey, Chrysler, M, Bowden, Mark E., Zhu, Zihua, Ablett, James, Lee, Tien-Lin, LeBeau, James M., Woicik, Joseph C., Sushko, Petr V., Chambers, Scott A., & Ngai, Joseph. Charge Transfer and Built-in Electric Fields Between a Crystalline Oxide and Silicon. United States. doi:10.1103/PhysRevLett.123.026805.
Lim, Zhenghui, Quackenbush, Nicholas, Penn, Aubrey, Chrysler, M, Bowden, Mark E., Zhu, Zihua, Ablett, James, Lee, Tien-Lin, LeBeau, James M., Woicik, Joseph C., Sushko, Petr V., Chambers, Scott A., and Ngai, Joseph. Thu . "Charge Transfer and Built-in Electric Fields Between a Crystalline Oxide and Silicon". United States. doi:10.1103/PhysRevLett.123.026805.
@article{osti_1573798,
title = {Charge Transfer and Built-in Electric Fields Between a Crystalline Oxide and Silicon},
author = {Lim, Zhenghui and Quackenbush, Nicholas and Penn, Aubrey and Chrysler, M and Bowden, Mark E. and Zhu, Zihua and Ablett, James and Lee, Tien-Lin and LeBeau, James M. and Woicik, Joseph C. and Sushko, Petr V. and Chambers, Scott A. and Ngai, Joseph},
abstractNote = {We report charge transfer and built-in electric fields across the epitaxial SrNbxTi1-xO3-d / Si(001) interface. Electrical transport measurements indicate the formation of a hole gas in the Si and the presence of built-in fields. Hard x-ray photoelectron measurements reveal pronounced asymmetries in core-level spectra that arise from these built-in fields. Analysis of these asymmetries enables built-in fields to be spatially mapped across the heterojunction. The demonstration of tunable charge transfer, built-in fields, and the spatial mapping of the latter, lays the groundwork for the development of electrically coupled, functional heterojunctions.},
doi = {10.1103/PhysRevLett.123.026805},
journal = {Physical Review Letters},
number = 2,
volume = 123,
place = {United States},
year = {2019},
month = {7}
}

Works referenced in this record:

Two-Dimensional Magnetotransport in the Extreme Quantum Limit
journal, May 1982


Crystalline Oxides on Silicon: The First Five Monolayers
journal, October 1998


Field-effect transistors with SrHfO3 as gate oxide
journal, July 2006

  • Rossel, C.; Mereu, B.; Marchiori, C.
  • Applied Physics Letters, Vol. 89, Issue 5
  • DOI: 10.1063/1.2236464

Atomic layer deposition of crystalline SrHfO 3 directly on Ge (001) for high- k dielectric applications
journal, February 2015

  • McDaniel, Martin D.; Hu, Chengqing; Lu, Sirong
  • Journal of Applied Physics, Vol. 117, Issue 5
  • DOI: 10.1063/1.4906953

A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst
journal, December 2014

  • Ji, Li; McDaniel, Martin D.; Wang, Shijun
  • Nature Nanotechnology, Vol. 10, Issue 1
  • DOI: 10.1038/nnano.2014.277

Solar hydrogen production using epitaxial SrTiO 3 on a GaAs photovoltaic
journal, January 2017

  • Kornblum, L.; Fenning, D. P.; Faucher, J.
  • Energy & Environmental Science, Vol. 10, Issue 1
  • DOI: 10.1039/C6EE03170F

Electrically coupling complex oxides to semiconductors: A route to novel material functionalities
journal, January 2017

  • Ngai, J. H.; Ahmadi-Majlan, K.; Moghadam, J.
  • Journal of Materials Research, Vol. 32, Issue 2
  • DOI: 10.1557/jmr.2016.496

Hall Mobility in SrTi O 3
journal, September 1967


Widths of the Atomic k–n7 Levels
journal, January 2001

  • Campbell, J. L.; Papp, Tibor
  • Atomic Data and Nuclear Data Tables, Vol. 77, Issue 1
  • DOI: 10.1006/adnd.2000.0848

Towards Two-Dimensional Metallic Behavior at LaAlO 3 / SrTiO 3 Interfaces
journal, May 2009


Atomic and electronic structure of the S i / S r T i O 3 interface
journal, September 2003


Complex band structure and the band alignment problem at the Si–high- k dielectric interface
journal, May 2005


Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd 3 As 2 Nanoplates
journal, May 2016


Layer-resolved band bending at the n SrTi O 3 ( 001 ) / p Ge ( 001 ) interface
journal, September 2018


Atomic and electronic surface structures of dopants in oxides: STM and XPS of Nb- and La-doped SrTiO 3 (001)
journal, January 2011


Many-electron singularity in X-ray photoemission and X-ray line spectra from metals
journal, February 1970


Silicide formation at the Ti/Si(111) interface: Diffusion parameters and behavior at elevated temperatures
journal, January 1987


Oxygen diffusion and precipitation in Czochralski silicon
journal, June 2000


Theory of semiconductor heterojunctions: The role of quantum dipoles
journal, October 1984


Surface depletion in doped SrTiO3 thin films
journal, March 2004

  • Ohtomo, A.; Hwang, H. Y.
  • Applied Physics Letters, Vol. 84, Issue 10
  • DOI: 10.1063/1.1668329

Electric field tuned crossover from classical to weakly localized quantum transport in electron doped SrTiO 3
journal, June 2010


Band offset and structure of SrTiO3 /Si(001) heterojunctions
journal, May 2001

  • Chambers, S. A.; Liang, Y.; Yu, Z.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, Issue 3
  • DOI: 10.1116/1.1365132

Tuning the work function in transition metal oxides and their heterostructures
journal, June 2016


Dielectric properties of sputtered SrTiO 3 films
journal, May 1994


Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface
journal, February 2015

  • Jahangir-Moghadam, Mohammadreza; Ahmadi-Majlan, Kamyar; Shen, Xuan
  • Advanced Materials Interfaces, Vol. 2, Issue 4
  • DOI: 10.1002/admi.201400497