Silk Flexible Electronics: From Bombyx mori Silk Ag Nanoclusters Hybrid Materials to Mesoscopic Memristors and Synaptic Emulators

Shi, Chenyang; Wang, Jingjuan; Sushko, Maria L.; Qiu, Wu; Yan, Xiaobing; Liu, Xiang Yang

doi:10.1002/adfm.201904777

Title: Silk Flexible Electronics: From Bombyx mori Silk Ag Nanoclusters Hybrid Materials to Mesoscopic Memristors and Synaptic Emulators

Journal Article · Thu Oct 17 00:00:00 EDT 2019 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201904777· OSTI ID:1572486

Shi, Chenyang ^[1]; Wang, Jingjuan ^[2];

^[3]; Qiu, Wu ^[1]; Yan, Xiaobing ^[4]; Liu, Xiang Yang ^[1]

Xiamen University
Hebei University
BATTELLE (PACIFIC NW LAB)
hebei University

Functionalization of flexible materials based on mesoscopic reconstruction is a key strategy in fabricating biocompatible flexible electronics. This work is to acquire new mesoscopic bioelectronic hybrid materials of silk fibroin (SF)-Ag nanoclusters (AgNCs@BSA; BSA: bovine serum albumin), which enhance significantly the performance of silk memristors. It is to build AgNCs@BSA into SF mesoscopic networks by templated ß-crystallization. Atomic force microscopy potential probing indicates that AgNCs@BSA serve as electronic potential wells that change completely the transport behavior of charge particles within the SF films. This leads to significant enhancement in the switching speed (˜10 ns), very good switching stability, extremely low set/reset voltages (0.3/-0.18 V) of SF meso-hybrid memristors, compared with the original and other organic memristors, and displays unique synapse characteristics and the capability of synapse learning. Classical density functional theory Poisson–Nernst–Planck simulations indicate that the enhanced performance is subject to the low potential paths interconnecting the AgNCs@BSA, which guide charges' transport (Ag+) and deposition in SF films.

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Research Organization:: Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC05-76RL01830

OSTI ID:: 1572486

Report Number(s):: PNNL-SA-147893

Journal Information:: Advanced Functional Materials, Vol. 29, Issue 42

Country of Publication:: United States

Language:: English

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