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Title: Raman study of amorphization in nanocrystalline 3C-SiC irradiated with C+ and He+ ions

Abstract

This study examines C+ and He+ ion irradiation induced amorphization processes in 3C-SiC nanograins embedded in an amorphous SiC matrix. Raman spectroscopy and Rutherford backscattering spectrometry are used for damage characterization. SiC grains with an average size of either ~6 or ~20 nm were observed to be fully amorphized to a lower dose at room temperature compared to their monocrystalline counterpart under the identical irradiation condition. In addition to damage accumulation induced amorphization in the grains, preferential amorphization at the crystalline/amorphous interfaces could play a significant role. This interface-driven amorphization proceeds at comparable rates for C+ and He+ ion irradiations. The results may have an important implication for nanocrystalline SiC to be applied in advanced nuclear reactors.

Authors:
 [1]; ORCiD logo [2];  [1];  [3];  [1];  [1];  [4]
  1. Lanzhou University
  2. BATTELLE (PACIFIC NW LAB)
  3. Universidade Fedderal do
  4. VISITORS
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1572470
Report Number(s):
PNNL-SA-139648
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Journal of Raman Spectroscopy
Additional Journal Information:
Journal Volume: 50; Journal Issue: 8
Country of Publication:
United States
Language:
English
Subject:
Amorphization, Ion irradiation, Silicon carbide, Nanocrystalline ceramics, Nuclear materials

Citation Formats

Zhang, Limin, Jiang, Weilin, Pan, Chenglong, Fadanelli Filho, Raul Carlos, Ai, Wensi, Chen, Liang, and Wang, Tieshan. Raman study of amorphization in nanocrystalline 3C-SiC irradiated with C+ and He+ ions. United States: N. p., 2019. Web. doi:10.1002/jrs.5631.
Zhang, Limin, Jiang, Weilin, Pan, Chenglong, Fadanelli Filho, Raul Carlos, Ai, Wensi, Chen, Liang, & Wang, Tieshan. Raman study of amorphization in nanocrystalline 3C-SiC irradiated with C+ and He+ ions. United States. doi:10.1002/jrs.5631.
Zhang, Limin, Jiang, Weilin, Pan, Chenglong, Fadanelli Filho, Raul Carlos, Ai, Wensi, Chen, Liang, and Wang, Tieshan. Fri . "Raman study of amorphization in nanocrystalline 3C-SiC irradiated with C+ and He+ ions". United States. doi:10.1002/jrs.5631.
@article{osti_1572470,
title = {Raman study of amorphization in nanocrystalline 3C-SiC irradiated with C+ and He+ ions},
author = {Zhang, Limin and Jiang, Weilin and Pan, Chenglong and Fadanelli Filho, Raul Carlos and Ai, Wensi and Chen, Liang and Wang, Tieshan},
abstractNote = {This study examines C+ and He+ ion irradiation induced amorphization processes in 3C-SiC nanograins embedded in an amorphous SiC matrix. Raman spectroscopy and Rutherford backscattering spectrometry are used for damage characterization. SiC grains with an average size of either ~6 or ~20 nm were observed to be fully amorphized to a lower dose at room temperature compared to their monocrystalline counterpart under the identical irradiation condition. In addition to damage accumulation induced amorphization in the grains, preferential amorphization at the crystalline/amorphous interfaces could play a significant role. This interface-driven amorphization proceeds at comparable rates for C+ and He+ ion irradiations. The results may have an important implication for nanocrystalline SiC to be applied in advanced nuclear reactors.},
doi = {10.1002/jrs.5631},
journal = {Journal of Raman Spectroscopy},
number = 8,
volume = 50,
place = {United States},
year = {2019},
month = {8}
}