Operational Conditions of Silicon Pixel Arrays for X-Ray Spectroscopy

Journal Article · Mon Sep 23 00:00:00 EDT 2019 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/TNS.2019.2943067· OSTI ID:1572374

Giacomini, Gabriele  ^[1]; Chen, Wei ^[1]; Kuczewski, Anthony ^[1]; Rumaiz, Abdul K. ^[1]; Siddons, David Peter ^[1]

---

1. Brookhaven National Lab. (BNL), Upton, NY (United States)

Arrays of silicon sensors can be utilized in those spectroscopic applications where a high event throughput is needed, for example in synchrotron-based experiments. Yet, in such arrays several noise contributions, beyond the well-known leakage, thermal and flicker noises, can be present which are absent in single channel detectors. Additional noise is generated ultimately by the condition at the silicon/silicon oxide interface, which in turn depends on the parameters of the silicon oxide over the not-implanted gaps. We discuss how to control this region to obtain the best spectroscopic performances.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Nuclear Physics (NP)
• Grant/Contract Number: SC0012704
• OSTI ID: 1572374
• Report Number(s): BNL-212238-2019-JAAM; TRN: US2001199
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 66, Issue 10; ISSN 0018-9499
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Electronic noise
silicon sensors
spectroscopy