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Title: Gapped electronic structure of epitaxial stanene on InSb(111)

Abstract

We report that stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. Lastly, the results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.

Authors:
 [1];  [2];  [1];  [3];  [4];  [4];  [5];  [6];  [7];  [8]
  1. Univerisity of Illinois at Urbana-Champaign, Urbana, IL (United States). Department of Physics and Frederick Seitz Materials Research Laboratory; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  2. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei (Taiwan)
  3. Univerisity of Illinois at Urbana-Champaign, Urbana, IL (United States). Department of Physics and Frederick Seitz Materials Research Laboratory; Nanjing University of Science and Technology (China). College of Science
  4. Univerisity of Illinois at Urbana-Champaign, Urbana, IL (United States). Department of Physics and Frederick Seitz Materials Research Laboratory
  5. Univ. of Missouri, Columbia, MO (United States). Department of Physics and Astronomy
  6. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  7. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei (Taiwan); Georgia Inst. of Technology, Atlanta, GA (United States). School of Physics; National Taiwan University, Taipei (Taiwan). Department of Physics
  8. Univerisity of Illinois at Urbana-Champaign, Urbana, IL (United States). Department of Physics and Frederick Seitz Materials Research Laboratory; National Taiwan University, Taipei (Taiwan). Department of Physics
Publication Date:
Research Org.:
Univerisity of Illinois at Urbana-Champaign, Urbana, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division
OSTI Identifier:
1571094
Alternate Identifier(s):
OSTI ID: 1416628; OSTI ID: 1416710
Grant/Contract Number:  
AC02-05CH11231; FG02-07ER46383
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 97; Journal Issue: 3; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Peng, Wang, Xiaoxiong, Flötotto, David, Hlevyack, Joseph Andrew, Bian, Guang, Mo, Sung-Kwan, Chou, Mei-Yin, and Chiang, Tai-Chang. Gapped electronic structure of epitaxial stanene on InSb(111). United States: N. p., 2018. Web. doi:10.1103/PhysRevB.97.035122.
Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Peng, Wang, Xiaoxiong, Flötotto, David, Hlevyack, Joseph Andrew, Bian, Guang, Mo, Sung-Kwan, Chou, Mei-Yin, & Chiang, Tai-Chang. Gapped electronic structure of epitaxial stanene on InSb(111). United States. doi:10.1103/PhysRevB.97.035122.
Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Peng, Wang, Xiaoxiong, Flötotto, David, Hlevyack, Joseph Andrew, Bian, Guang, Mo, Sung-Kwan, Chou, Mei-Yin, and Chiang, Tai-Chang. Thu . "Gapped electronic structure of epitaxial stanene on InSb(111)". United States. doi:10.1103/PhysRevB.97.035122. https://www.osti.gov/servlets/purl/1571094.
@article{osti_1571094,
title = {Gapped electronic structure of epitaxial stanene on InSb(111)},
author = {Xu, Cai-Zhi and Chan, Yang-Hao and Chen, Peng and Wang, Xiaoxiong and Flötotto, David and Hlevyack, Joseph Andrew and Bian, Guang and Mo, Sung-Kwan and Chou, Mei-Yin and Chiang, Tai-Chang},
abstractNote = {We report that stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. Lastly, the results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.},
doi = {10.1103/PhysRevB.97.035122},
journal = {Physical Review B},
issn = {2469-9950},
number = 3,
volume = 97,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 17 works
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Figures / Tables:

FIG. 1 FIG. 1: (a) Top and side views of the atomic structure of stanene. (b) Brillouin zone of stanene. (c) RHEED intensity as a function of time of Sn growth on InSb(111). The blue arrows mark when each layer of Sn is formed. (d) RHEED pattern of the InSb(111) substrate beforemore » deposition of Sn, which shows a 3×3 reconstruction. (e) RHEED pattern after one layer of Sn is deposited to form stanene. (f) Photoemission spectrum taken from stanene on InSb(111). The peaks correspond to the 4$d$ core levels of In, Sn, and Sb as labeled.« less

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Works referenced in this record:

Surface phase transition and interface interaction in the α-Sn/InSb{111} system
journal, September 1994


Projector augmented-wave method
journal, December 1994


Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996


Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
journal, March 2013

  • Butler, Sheneve Z.; Hollen, Shawna M.; Cao, Linyou
  • ACS Nano, Vol. 7, Issue 4, p. 2898-2926
  • DOI: 10.1021/nn400280c

Temperature dependence of the energy gap of InSb using nonlinear optical techniques
journal, May 1985

  • Littler, C. L.; Seiler, D. G.
  • Applied Physics Letters, Vol. 46, Issue 10
  • DOI: 10.1063/1.95789

Low-energy effective Hamiltonian involving spin-orbit coupling in silicene and two-dimensional germanium and tin
journal, November 2011


Quantum Spin Hall Insulator State in HgTe Quantum Wells
journal, November 2007


Stable two-dimensional dumbbell stanene: A quantum spin Hall insulator
journal, September 2014


Quantum Spin Hall Effect in Graphene
journal, November 2005


Colloquium: Topological insulators
journal, November 2010


Enhanced Thermoelectric Performance and Anomalous Seebeck Effects in Topological Insulators
journal, June 2014


Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


Topological phase transitions in stanene and stanene-like systems by scaling the spin-orbit coupling
journal, August 2016


From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


Recent Advances in Two-Dimensional Materials beyond Graphene
journal, October 2015


A precise method for visualizing dispersive features in image plots
journal, April 2011

  • Zhang, P.; Richard, P.; Qian, T.
  • Review of Scientific Instruments, Vol. 82, Issue 4
  • DOI: 10.1063/1.3585113

Elemental Topological Dirac Semimetal: α -Sn on InSb(111)
journal, April 2017


Density-functional theory and strong interactions: Orbital ordering in Mott-Hubbard insulators
journal, August 1995


Electronic structure of α-Sn and its dependence on hydrostatic strain
journal, September 1993


Large-Gap Quantum Spin Hall Insulators in Tin Films
journal, September 2013


2D materials and van der Waals heterostructures
journal, July 2016


The quantum spin Hall effect and topological insulators
journal, January 2010

  • Qi, Xiao-Liang; Zhang, Shou-Cheng
  • Physics Today, Vol. 63, Issue 1, p. 33-38
  • DOI: 10.1063/1.3293411

Two-dimensional time-reversal-invariant topological superconductivity in a doped quantum spin-Hall insulator
journal, August 2014


Topological α -Sn surface states versus film thickness and strain
journal, September 2014


The electronic properties of graphene
journal, January 2009

  • Castro Neto, A. H.; Guinea, F.; Peres, N. M. R.
  • Reviews of Modern Physics, Vol. 81, Issue 1, p. 109-162
  • DOI: 10.1103/RevModPhys.81.109

Elemental Analogues of Graphene: Silicene, Germanene, Stanene, and Phosphorene
journal, November 2014


Evidence for Helical Edge Modes in Inverted InAs / GaSb Quantum Wells
journal, September 2011


Strain-induced band engineering in monolayer stanene on Sb(111)
journal, October 2017


Large-gap quantum spin Hall states in decorated stanene grown on a substrate
journal, August 2015


Quantum Spin Hall Effect in Silicene and Two-Dimensional Germanium
journal, August 2011


Epitaxial growth of two-dimensional stanene
journal, August 2015

  • Zhu, Feng-feng; Chen, Wei-jiong; Xu, Yong
  • Nature Materials, Vol. 14, Issue 10
  • DOI: 10.1038/nmat4384

Prediction of Near-Room-Temperature Quantum Anomalous Hall Effect on Honeycomb Materials
journal, December 2014


Electronic structure of two-dimensional crystals from ab initio theory
journal, March 2009


Nonlocal Transport in the Quantum Spin Hall State
journal, July 2009


The growth of metastable, heteroepitaxial films of α-Sn by metal beam epitaxy
journal, September 1981


    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.