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Title: Gapped electronic structure of epitaxial stanene on InSb(111)

Abstract

We report that stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. Lastly, the results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.

Authors:
 [1];  [2];  [1];  [3];  [4];  [4];  [5];  [6];  [7];
  1. Univ. of Illinois at Urbana-Champaign, IL (United States). Dept. of Physics; Univ. of Illinois at Urbana-Champaign, IL (United States). Frederick Seitz Materials Research Lab.; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  2. Academia Sinica, Taipei (Taiwan). Inst. of Atomic and Molecular Sciences
  3. Univ. of Illinois at Urbana-Champaign, IL (United States). Dept. of Physics; Univ. of Illinois at Urbana-Champaign, IL (United States). Frederick Seitz Materials Research Lab.; Nanjing Univ. of Science and Technology, Nanjing (China). College of Science
  4. Univ. of Illinois at Urbana-Champaign, IL (United States). Dept. of Physics; Univ. of Illinois at Urbana-Champaign, IL (United States). Frederick Seitz Materials Research Lab.
  5. Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy
  6. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  7. Academia Sinica, Taipei (Taiwan). Inst. of Atomic and Molecular Sciences; Georgia Inst. of Technology, Atlanta, GA (United States). School of Physics
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Univerisity of Illinois at Urbana-Champaign, Urbana, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1571094
Alternate Identifier(s):
OSTI ID: 1416628; OSTI ID: 1416710
Grant/Contract Number:  
AC02-05CH11231; FG02-07ER46383
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 97; Journal Issue: 3; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Peng, Wang, Xiaoxiong, Flötotto, David, Hlevyack, Joseph Andrew, Bian, Guang, Mo, Sung-Kwan, Chou, Mei-Yin, and Chiang, Tai-Chang. Gapped electronic structure of epitaxial stanene on InSb(111). United States: N. p., 2018. Web. doi:10.1103/PhysRevB.97.035122.
Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Peng, Wang, Xiaoxiong, Flötotto, David, Hlevyack, Joseph Andrew, Bian, Guang, Mo, Sung-Kwan, Chou, Mei-Yin, & Chiang, Tai-Chang. Gapped electronic structure of epitaxial stanene on InSb(111). United States. https://doi.org/10.1103/PhysRevB.97.035122
Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Peng, Wang, Xiaoxiong, Flötotto, David, Hlevyack, Joseph Andrew, Bian, Guang, Mo, Sung-Kwan, Chou, Mei-Yin, and Chiang, Tai-Chang. 2018. "Gapped electronic structure of epitaxial stanene on InSb(111)". United States. https://doi.org/10.1103/PhysRevB.97.035122. https://www.osti.gov/servlets/purl/1571094.
@article{osti_1571094,
title = {Gapped electronic structure of epitaxial stanene on InSb(111)},
author = {Xu, Cai-Zhi and Chan, Yang-Hao and Chen, Peng and Wang, Xiaoxiong and Flötotto, David and Hlevyack, Joseph Andrew and Bian, Guang and Mo, Sung-Kwan and Chou, Mei-Yin and Chiang, Tai-Chang},
abstractNote = {We report that stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. Lastly, the results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.},
doi = {10.1103/PhysRevB.97.035122},
url = {https://www.osti.gov/biblio/1571094}, journal = {Physical Review B},
issn = {2469-9950},
number = 3,
volume = 97,
place = {United States},
year = {Thu Jan 11 00:00:00 EST 2018},
month = {Thu Jan 11 00:00:00 EST 2018}
}

Journal Article:

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Cited by: 83 works
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Figures / Tables:

FIG. 1 FIG. 1: (a) Top and side views of the atomic structure of stanene. (b) Brillouin zone of stanene. (c) RHEED intensity as a function of time of Sn growth on InSb(111). The blue arrows mark when each layer of Sn is formed. (d) RHEED pattern of the InSb(111) substrate beforemore » deposition of Sn, which shows a 3×3 reconstruction. (e) RHEED pattern after one layer of Sn is deposited to form stanene. (f) Photoemission spectrum taken from stanene on InSb(111). The peaks correspond to the 4$$d$$ core levels of In, Sn, and Sb as labeled.« less

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Works referencing / citing this record:

Thermal Stability Enhancement in Epitaxial Alpha Tin Films by Strain Engineering
journal, August 2019


Realizing an Epitaxial Decorated Stanene with an Insulating Bandgap
journal, July 2018


Stanene: A Promising Material for New Electronic and Spintronic Applications
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Growth and Magnetotransport in Thin‐Film α‐Sn on CdTe
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Epitaxial growth and physical properties of 2D materials beyond graphene: from monatomic materials to binary compounds
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Facile fabrication of 2D stanene nanosheets via a dealloying strategy for potassium storage
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Experimental observation of conductive edge states in weak topological insulator candidate HfTe 5
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A van der Waals epitaxial growth of ultrathin two-dimensional Sn film on graphene covered Cu(111) substrate
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Epitaxial growth and electronic properties of few-layer stanene on InSb (1 1 1)
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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.