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Title: Gapped electronic structure of epitaxial stanene on InSb(111)

Abstract

We report that stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. Lastly, the results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.

Authors:
 [1];  [2];  [1];  [3];  [4];  [4];  [5];  [6];  [7];  [8]
+ Show Author Affiliations
  1. Univerisity of Illinois at Urbana-Champaign, Urbana, IL (United States). Department of Physics and Frederick Seitz Materials Research Laboratory; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  2. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei (Taiwan)
  3. Univerisity of Illinois at Urbana-Champaign, Urbana, IL (United States). Department of Physics and Frederick Seitz Materials Research Laboratory; Nanjing University of Science and Technology (China). College of Science
  4. Univerisity of Illinois at Urbana-Champaign, Urbana, IL (United States). Department of Physics and Frederick Seitz Materials Research Laboratory
  5. Univ. of Missouri, Columbia, MO (United States). Department of Physics and Astronomy
  6. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  7. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei (Taiwan); Georgia Inst. of Technology, Atlanta, GA (United States). School of Physics; National Taiwan University, Taipei (Taiwan). Department of Physics
  8. Univerisity of Illinois at Urbana-Champaign, Urbana, IL (United States). Department of Physics and Frederick Seitz Materials Research Laboratory; National Taiwan University, Taipei (Taiwan). Department of Physics
Publication Date:
Research Org.:
Univerisity of Illinois at Urbana-Champaign, Urbana, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division
OSTI Identifier:
1571094
Alternate Identifier(s):
OSTI ID: 1416628; OSTI ID: 1416710
Grant/Contract Number:  
AC02-05CH11231; FG02-07ER46383
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 97; Journal Issue: 3; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Peng, Wang, Xiaoxiong, Flötotto, David, Hlevyack, Joseph Andrew, Bian, Guang, Mo, Sung-Kwan, Chou, Mei-Yin, and Chiang, Tai-Chang. Gapped electronic structure of epitaxial stanene on InSb(111). United States: N. p., 2018. Web. doi:10.1103/PhysRevB.97.035122.
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Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Peng, Wang, Xiaoxiong, Flötotto, David, Hlevyack, Joseph Andrew, Bian, Guang, Mo, Sung-Kwan, Chou, Mei-Yin, & Chiang, Tai-Chang. Gapped electronic structure of epitaxial stanene on InSb(111). United States. doi:10.1103/PhysRevB.97.035122.
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Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Peng, Wang, Xiaoxiong, Flötotto, David, Hlevyack, Joseph Andrew, Bian, Guang, Mo, Sung-Kwan, Chou, Mei-Yin, and Chiang, Tai-Chang. Thu . "Gapped electronic structure of epitaxial stanene on InSb(111)". United States. doi:10.1103/PhysRevB.97.035122. https://www.osti.gov/servlets/purl/1571094.
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@article{osti_1571094,
title = {Gapped electronic structure of epitaxial stanene on InSb(111)},
author = {Xu, Cai-Zhi and Chan, Yang-Hao and Chen, Peng and Wang, Xiaoxiong and Flötotto, David and Hlevyack, Joseph Andrew and Bian, Guang and Mo, Sung-Kwan and Chou, Mei-Yin and Chiang, Tai-Chang},
abstractNote = {We report that stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. Lastly, the results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.},
doi = {10.1103/PhysRevB.97.035122},
journal = {Physical Review B},
issn = {2469-9950},
number = 3,
volume = 97,
place = {United States},
year = {2018},
month = {1}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI:  10.1103/PhysRevB.97.035122
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Cited by: 17 works
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Figures / Tables:

FIG. 1 FIG. 1: (a) Top and side views of the atomic structure of stanene. (b) Brillouin zone of stanene. (c) RHEED intensity as a function of time of Sn growth on InSb(111). The blue arrows mark when each layer of Sn is formed. (d) RHEED pattern of the InSb(111) substrate beforemore » deposition of Sn, which shows a 3×3 reconstruction. (e) RHEED pattern after one layer of Sn is deposited to form stanene. (f) Photoemission spectrum taken from stanene on InSb(111). The peaks correspond to the 4$d$ core levels of In, Sn, and Sb as labeled.« less
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    Figures / Tables found in this record:

    FIG. 1 (p. 12)figure
    FIG. 2 (p. 13)figure
    FIG. 3 (p. 14)figure
    FIG. 4 (p. 15)figure
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