Hybrid silicon lasers and amplifiers with 2D phosphorene film
Patent
·
OSTI ID:1568685
Hybrid silicon lasers and amplifiers having resonator cavities within a silicon substrate and a two-dimensional material film on the substrate as an optical gain medium are described. The two-dimensional material film may be formed of one or more atomic layers of phosphorene (BP). The number of phosphorene layers may be adjusted to tune the emission wavelength of the hybrid devices.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-06CH11357
- Assignee:
- UChicago Argonne, LLC (Chicago, IL); Northwestern University (Evanston, IL)
- Patent Number(s):
- 10,374,385
- Application Number:
- 15/706,109
- OSTI ID:
- 1568685
- Country of Publication:
- United States
- Language:
- English
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