Power MOSFETs with superior high frequency figure-of-merit
An insulated-gate field effect transistor includes a substrate having a drift region and a source region of first conductivity type, and a base region and shielding region of second conductivity type therein. The base region forms a first P-N junction with the source region and the shielding region extends between the drift region and the base region. A transition region of first conductivity type is provided, which is electrically coupled to the drift region. The transition region extends between a first surface of the substrate and the shielding region, and forms a second P-N junction with the base region. An insulated gate electrode is provided on a first surface of the substrate. The insulated gate electrode has an electrically conductive gate therein with a drain-side sidewall extending intermediate the second P-N junction and an end of the shielding region when viewed in transverse cross-section.
- Research Organization:
- North Carolina State Univ., Raleigh, NC (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- EE0006521
- Assignee:
- North Carolina State University (Raleigh, NC)
- Patent Number(s):
- 10,355,132
- Application Number:
- 15/925,826
- OSTI ID:
- 1568614
- Country of Publication:
- United States
- Language:
- English
Similar Records
Monolithically-integrated AC switch having JBSFETs therein with commonly-connected drain and cathode electrodes
Transverse junction stripe laser