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Title: Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells

Abstract

Thin-film photovoltaic devices and methods of their use and manufacture are disclosed. More particularly, polycrystalline CuIn(1-x)GaxSe2 (CIGS) based thin-film photovoltaic devices having independently tunable sublayers are disclosed. Also provided are methods of producing an n-doped graphene.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1568534
Patent Number(s):
10,333,017
Application Number:
15/127,996
Assignee:
Brookhaven Science Associates, LLC (Upton, NY); The Research Foundation of State University of New York (Stony Brook, NY)
DOE Contract Number:  
AC02-98CH10886; SC0012704
Resource Type:
Patent
Resource Relation:
Patent File Date: 03/20/2015
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE

Citation Formats

Dissanayake, Nanditha M., Eisaman, Matthew, Ashraf, Ahsan, Goroff, Nancy, and Ang, Xiuzhu. Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells. United States: N. p., 2019. Web.
Dissanayake, Nanditha M., Eisaman, Matthew, Ashraf, Ahsan, Goroff, Nancy, & Ang, Xiuzhu. Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells. United States.
Dissanayake, Nanditha M., Eisaman, Matthew, Ashraf, Ahsan, Goroff, Nancy, and Ang, Xiuzhu. Tue . "Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells". United States. https://www.osti.gov/servlets/purl/1568534.
@article{osti_1568534,
title = {Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells},
author = {Dissanayake, Nanditha M. and Eisaman, Matthew and Ashraf, Ahsan and Goroff, Nancy and Ang, Xiuzhu},
abstractNote = {Thin-film photovoltaic devices and methods of their use and manufacture are disclosed. More particularly, polycrystalline CuIn(1-x)GaxSe2 (CIGS) based thin-film photovoltaic devices having independently tunable sublayers are disclosed. Also provided are methods of producing an n-doped graphene.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {6}
}

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