Methods of generation of pores in sheets of hexagonal boron nitride and applications thereof
Patent
·
OSTI ID:1568364
This disclosure provides systems, methods, and apparatus related to few-layer and monolayer hexagonal boron nitride having a pore therein. In one aspect, a method comprises providing a sheet of hexagonal boron nitride (h-BN). A defect is created in the sheet of h-BN. The sheet of h-BN is heated to a temperature above about 500° C. The defect in the sheet of h-BN is irradiated with charged particles to enlarge the defect to a hexagonal-shaped pore or a parallelogram-shaped pore in the sheet of h-BN.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-05CH11231; FA9950-10-1-0451; HDTRA1-15-1-0036; N00014-09-1-1066
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Number(s):
- 10,294,524
- Application Number:
- 15/088,549
- OSTI ID:
- 1568364
- Resource Relation:
- Patent File Date: 04/01/2016
- Country of Publication:
- United States
- Language:
- English
Method of manufacture of atomically thin boron nitride
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Controlled fabrication of nanopores in nanometric solid state materials
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