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Title: Power module assembly with dual substrates and reduced inductance

Patent ·
OSTI ID:1568311

A power module assembly has a first substrate including a first layer, second layer and a third layer. The first layer is configured to carry a switch current flowing in a first direction. A second substrate is operatively connected to the first substrate and includes a fourth layer, fifth layer and a sixth layer. A conductive joining layer connects the third layer of the first substrate and the fourth layer of the second substrate. The conductive joining layer may be a first sintered layer. The third layer of the first substrate, the first sintered layer and the fourth layer of the second substrate are configured to function together as a unitary conducting layer carrying the switch current in a second direction substantially opposite to the first direction. The net inductance is reduced by a cancellation effect of the switch current going in opposite directions.

Research Organization:
GM Global Technology Operations LLC, Detroit, MI (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0007285
Assignee:
GM Global Technology Operations LLC (Detroit, MI)
Patent Number(s):
10,283,475
Application Number:
15/378,154
OSTI ID:
1568311
Resource Relation:
Patent File Date: 12/14/2016
Country of Publication:
United States
Language:
English

References (4)

Semiconductor device patent-application March 2016
Semiconductor Device Including Diffusion Soldered Layer on Sintered Silver Layer patent-application February 2013
Semiconductor Modules and Methods of Forming the Same patent-application June 2013
Semiconductor Subassemblies with Interconnects and Methods for Manufacturing the Same patent-application December 2008

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