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Title: Effect of Ti Doping on the Crystallography, Phase, Surface/interface Structure and Optical Band Gap of Ga2O3 Thin Films

Abstract

The effect of titanium (Ti) doping on the crystal structure, phase, surface/interface chemistry, microstructure and optical band gap of gallium oxide (Ga2O3) (GTO) films is reported. The Ti content was varied from 0 to * 5 at% in cosputtering, using Ga2O3 ceramic and Ti metal targets, deposited GTO films produced. The sputtering power to the Ti target was varied in the range of 0–100 W, while keeping the sputtering power to Ga2O3 constant at 100 W, to produce GTO films with 0–5 at% Ti. The Ti-incorporation-induced effects were significant for the crystal structure, phase, surface/interface chemistry and morphology, which in turn induce changes in the band gap. The high-resolution core-level X-ray photoelectron spectroscopy (XPS) analyses confirm that the Ga ions exist as Ga3? in both intrinsic Ga oxide and GTO films. However, XPS data reveal the formation of Ga2O3–TiO2 films with the presence of Ti4? ions with increasing Ti sputtering power, i.e., higher Ti contents in GTO. Evidence for the formation of nanocrystalline Ga2O3–TiO2 films was also found in the structural analyses performed using electron microscopy and grazing incidence X-ray diffraction. Significant band gap reduction (Eg * 0.9 eV) occurs in GTO films with increasing Ti dopant concentration from 0more » to 5 at%. A correlation between the Ti dopant concentration, surface/interface chemistry, microstructure and band gap of GTO films is established.« less

Authors:
 [1];  [1];  [2];  [3]; ORCiD logo [4];  [1]
  1. University of Texas at El Paso
  2. University of Pittsburgh
  3. Carnegie Mellon University
  4. BATTELLE (PACIFIC NW LAB)
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1566763
Report Number(s):
PNNL-SA-147395
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Journal of Materials Science
Additional Journal Information:
Journal Volume: 54; Journal Issue: 17
Country of Publication:
United States
Language:
English

Citation Formats

Manandhar, Sandeep, Battu, Anil K., Tan, Susheng, Panat, Rahul, Shutthanandan, Vaithiyalingam, and Ramana, C.V. Effect of Ti Doping on the Crystallography, Phase, Surface/interface Structure and Optical Band Gap of Ga2O3 Thin Films. United States: N. p., 2019. Web. doi:10.1007/s10853-019-03663-w.
Manandhar, Sandeep, Battu, Anil K., Tan, Susheng, Panat, Rahul, Shutthanandan, Vaithiyalingam, & Ramana, C.V. Effect of Ti Doping on the Crystallography, Phase, Surface/interface Structure and Optical Band Gap of Ga2O3 Thin Films. United States. doi:10.1007/s10853-019-03663-w.
Manandhar, Sandeep, Battu, Anil K., Tan, Susheng, Panat, Rahul, Shutthanandan, Vaithiyalingam, and Ramana, C.V. Sun . "Effect of Ti Doping on the Crystallography, Phase, Surface/interface Structure and Optical Band Gap of Ga2O3 Thin Films". United States. doi:10.1007/s10853-019-03663-w.
@article{osti_1566763,
title = {Effect of Ti Doping on the Crystallography, Phase, Surface/interface Structure and Optical Band Gap of Ga2O3 Thin Films},
author = {Manandhar, Sandeep and Battu, Anil K. and Tan, Susheng and Panat, Rahul and Shutthanandan, Vaithiyalingam and Ramana, C.V.},
abstractNote = {The effect of titanium (Ti) doping on the crystal structure, phase, surface/interface chemistry, microstructure and optical band gap of gallium oxide (Ga2O3) (GTO) films is reported. The Ti content was varied from 0 to * 5 at% in cosputtering, using Ga2O3 ceramic and Ti metal targets, deposited GTO films produced. The sputtering power to the Ti target was varied in the range of 0–100 W, while keeping the sputtering power to Ga2O3 constant at 100 W, to produce GTO films with 0–5 at% Ti. The Ti-incorporation-induced effects were significant for the crystal structure, phase, surface/interface chemistry and morphology, which in turn induce changes in the band gap. The high-resolution core-level X-ray photoelectron spectroscopy (XPS) analyses confirm that the Ga ions exist as Ga3? in both intrinsic Ga oxide and GTO films. However, XPS data reveal the formation of Ga2O3–TiO2 films with the presence of Ti4? ions with increasing Ti sputtering power, i.e., higher Ti contents in GTO. Evidence for the formation of nanocrystalline Ga2O3–TiO2 films was also found in the structural analyses performed using electron microscopy and grazing incidence X-ray diffraction. Significant band gap reduction (Eg * 0.9 eV) occurs in GTO films with increasing Ti dopant concentration from 0 to 5 at%. A correlation between the Ti dopant concentration, surface/interface chemistry, microstructure and band gap of GTO films is established.},
doi = {10.1007/s10853-019-03663-w},
journal = {Journal of Materials Science},
number = 17,
volume = 54,
place = {United States},
year = {2019},
month = {9}
}