Relaxation of a Spiking Mott Artificial Neuron

Tesler, Federico; Adda, Coline; Tranchant, Julien; Corraze, Benoit; Janod, Etienne; Cario, Laurent; Stoliar, Pablo; Rozenberg, Marcelo

doi:10.1103/physrevapplied.10.054001

Relaxation of a Spiking Mott Artificial Neuron

Journal Article · 01 November 2018 · Physical Review Applied

DOI:https://doi.org/10.1103/physrevapplied.10.054001· OSTI ID:1566680

Tesler, Federico; Adda, Coline; Tranchant, Julien; Corraze, Benoit; Janod, Etienne; Cario, Laurent; Stoliar, Pablo; Rozenberg, Marcelo

We consider the phenomenon of electric Mott transition (EMT), which is an electrically induced insulator-to-metal transition. Experimentally, it is observed that depending on the magnitude of the electric excitation, the final state may show a short-lived or a long-lived resistance change. We extend a previous model for the EMT to include the effect of local structural distortions through an elastic energy term. We find that by strong electric pulsing, the induced metastable phase may become further stabilized by the electroelastic effect. We present a systematic study of the model by numerical simulations and compare the results to experiments in Mott insulators of the AM₄Q₈ family. Our work significantly extends the scope of our recently introduced leaky-integrate-and-fire Mott neuron [P. Stoliar et al., Adv. Funct. Mat. 27, 1604740 (2017)] to provide a better insight into the physical mechanism of its relaxation. This is a key feature for future implementations of neuromorphic circuits.

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Quantum Materials for Energy Efficient Neuromorphic Computing (Q-MEEN-C); Univ. of California, San Diego, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

DOE Contract Number:: SC0019273

OSTI ID:: 1566680

Journal Information:: Physical Review Applied, Vol. 10, Issue 5; ISSN 2331-7019

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

References (24)

A scalable neuristor built with Mott memristors No authors listed Nature Materials https://doi.org/10.1038/nmat3510		December 2012
Nonthermal and purely electronic resistive switching in a Mott memory No authors listed Physical Review B https://doi.org/10.1103/PhysRevB.90.045146		July 2014
A spiking and bursting neuron circuit based on memristor No authors listed Neurocomputing https://doi.org/10.1016/j.neucom.2016.03.060		August 2016
Control of resistive switching in AM ₄ Q ₈ narrow gap Mott insulators: A first step towards neuromorphic applications : Control of resistive switching in AM No authors listed physica status solidi (a) https://doi.org/10.1002/pssa.201400158		November 2014
Metal-insulator transitions No authors listed Reviews of Modern Physics https://doi.org/10.1103/RevModPhys.70.1039		October 1998
Electric-Pulse-driven Electronic Phase Separation, Insulator-Metal Transition, and Possible Superconductivity in a Mott Insulator No authors listed Advanced Materials https://doi.org/10.1002/adma.200702967		July 2008
Nonequilibrium dynamical mean-field theory and its applications No authors listed Reviews of Modern Physics https://doi.org/10.1103/RevModPhys.86.779		June 2014
Thermodynamics of self-oscillations in VO ₂ for spiking solid-state neurons No authors listed AIP Advances https://doi.org/10.1063/1.4983175		May 2017
Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa ₄ Se ₈ No authors listed Nano Letters https://doi.org/10.1021/nl401510p		July 2013
Group Invariant Scattering No authors listed Communications on Pure and Applied Mathematics https://doi.org/10.1002/cpa.21413		July 2012
Neural codes: Firing rates and beyond No authors listed Proceedings of the National Academy of Sciences https://doi.org/10.1073/pnas.94.24.12740		November 1997
Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators No authors listed Advanced Materials https://doi.org/10.1002/adma.201301113		May 2013
Metal–Oxide RRAM No authors listed Proceedings of the IEEE https://doi.org/10.1109/JPROC.2012.2190369		June 2012
Dynamical mean-field theory of strongly correlated fermion systems and the limit of infinite dimensions No authors listed Reviews of Modern Physics https://doi.org/10.1103/RevModPhys.68.13		January 1996
Nanoscale Memristor Device as Synapse in Neuromorphic Systems No authors listed Nano Letters https://doi.org/10.1021/nl904092h		April 2010
First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa 4 Se 8 No authors listed Physical Review Letters https://doi.org/10.1103/PhysRevLett.113.086404		August 2014
Experimental demonstration of associative memory with memristive neural networks No authors listed Neural Networks https://doi.org/10.1016/j.neunet.2010.05.001		September 2010
Resistive Switching in Mott Insulators and Correlated Systems No authors listed Advanced Functional Materials https://doi.org/10.1002/adfm.201500823		July 2015
A Leaky-Integrate-and-Fire Neuron Analog Realized with a Mott Insulator No authors listed Advanced Functional Materials https://doi.org/10.1002/adfm.201604740		January 2017
Avalanche breakdown in GaTa4Se8−xTex narrow-gap Mott insulators No authors listed Nature Communications https://doi.org/10.1038/ncomms2735		April 2013
Mott Transition in VO2 Revealed by Infrared Spectroscopy and Nano-Imaging No authors listed Science https://doi.org/10.1126/science.1150124		December 2007
Deep learning in neural networks: An overview No authors listed Neural Networks https://doi.org/10.1016/j.neunet.2014.09.003		January 2015
NbO _x based oscillation neuron for neuromorphic computing No authors listed Applied Physics Letters https://doi.org/10.1063/1.4991917		September 2017
High-resolution elastic strain measurement from electron backscatter diffraction patterns: New levels of sensitivity No authors listed Ultramicroscopy https://doi.org/10.1016/j.ultramic.2005.10.001		March 2006

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