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Title: Gate-Tunable Near-Field Heat Transfer

Journal Article · · ACS Photonics

Active control over the flow of heat in the near-field holds promise for nanoscale thermal management, with applications in refrigeration, thermophotovoltaics, and thermal circuitry. Analogously to its electronic counterpart, the metal–oxide–semiconductor (MOS) capacitor, we propose a thermal switching mechanism based on accumulation and depletion of charge carriers in an ultrathin plasmonic film, via application of external bias. In our proposed configuration, the plasmonic film is placed on top of a polaritonic dielectric material that provides a surface phonon polariton (SPhP) thermal channel, while also ensuring electrical insulation for application of large electric fields. The variation of carrier density in the plasmonic film enables the control of the surface plasmon polariton (SPP) thermal channel. We show that the interaction of the SPP with the SPhP significantly enhances the net heat transfer. Here, we study SiC as the oxide and explore three classes of gate-tunable plasmonic materials, transparent conductive oxides, doped semiconductors, and graphene, and theoretically predict contrast ratios as high as 225%.

Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Light-Material Interactions in Energy Conversion (LMI). Photonics at Thermodynamic Limits (PTL); California Institute of Technology (CalTech), Pasadena, CA (United States); Stanford Univ., CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0001293; SC0019140
OSTI ID:
1566583
Journal Information:
ACS Photonics, Vol. 6, Issue 3; ISSN 2330-4022
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 39 works
Citation information provided by
Web of Science

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Cited By (2)

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