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Title: Selective Transfer of Rotationally Commensurate MoS 2 from an Epitaxially Grown van der Waals Heterostructure

Abstract

We report that large-scale synthesis of high-quality two-dimensional (2D) semiconductors is critical for their incorporation in emerging electronic and optoelectronic technologies. In particular, chemical vapor deposition (CVD) of transition-metal dichalcogenides (TMDs) via van der Waals epitaxy on epitaxial graphene (EG) leads to rotationally commensurate TMDs in contrast to randomly aligned TMDs grown on amorphous oxide substrates. However, the interlayer coupling between TMDs and EG hinders the investigation and utilization of the intrinsic electronic properties of the resulting TMDs, thus requiring their isolation from the EG growth substrate. To address this issue, we report here a technique for selectively transferring monolayer molybdenum disulfide (MoS 2) from CVD-grown MoS 2-EG van der Waals heterojunctions using copper (Cu) adhesion layers. The choice of Cu as the adhesion layer is motivated by density functional theory calculations that predict the preferential binding of monolayer MoS 2 to Cu in contrast to graphene. Atomic force microscopy and optical spectroscopy confirm the large-scale transfer of rotationally commensurate MoS 2 onto SiO 2/Si substrates without cracks, wrinkles, or residues. Furthermore, the transferred MoS 2 shows high performance in field-effect transistors with mobilities of up to 30 cm 2/V s and on/off ratios of up to 10 6 atmore » room temperature. Lastly, this transfer technique can likely be generalized to other TMDs and related 2D materials grown on EG, thus offering a broad range of benefits in nanoelectronic, optoelectronic, and photonic applications.« less

Authors:
 [1]; ORCiD logo [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [1]; ORCiD logo [1]
  1. Northwestern Univ., Evanston, IL (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Light Energy Activated Redox Processes (LEAP); Northwestern Univ., Evanston, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1566489
Grant/Contract Number:  
SC0001059
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Chemistry of Materials
Additional Journal Information:
Journal Volume: 30; Journal Issue: 23; Journal ID: ISSN 0897-4756
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; catalysis (homogeneous); catalysis (heterogeneous); solar (photovoltaic); solar (fuels); optics; phonons; photosynthesis (natural and artificial); bio-inspired; hydrogen and fuel cells; charge transport; magnetism and spin physics; materials and chemistry by design; mesostructured materials; synthesis (novel materials); synthesis (self-assembly); synthesis (scalable processing)

Citation Formats

Kang, Junmo, Balla, Itamar, Liu, Xiaolong, Bergeron, Hadallia, Kim, Soo, Wolverton, Christopher, and Hersam, Mark C. Selective Transfer of Rotationally Commensurate MoS2 from an Epitaxially Grown van der Waals Heterostructure. United States: N. p., 2018. Web. doi:10.1021/acs.chemmater.8b03128.
Kang, Junmo, Balla, Itamar, Liu, Xiaolong, Bergeron, Hadallia, Kim, Soo, Wolverton, Christopher, & Hersam, Mark C. Selective Transfer of Rotationally Commensurate MoS2 from an Epitaxially Grown van der Waals Heterostructure. United States. doi:10.1021/acs.chemmater.8b03128.
Kang, Junmo, Balla, Itamar, Liu, Xiaolong, Bergeron, Hadallia, Kim, Soo, Wolverton, Christopher, and Hersam, Mark C. Fri . "Selective Transfer of Rotationally Commensurate MoS2 from an Epitaxially Grown van der Waals Heterostructure". United States. doi:10.1021/acs.chemmater.8b03128. https://www.osti.gov/servlets/purl/1566489.
@article{osti_1566489,
title = {Selective Transfer of Rotationally Commensurate MoS2 from an Epitaxially Grown van der Waals Heterostructure},
author = {Kang, Junmo and Balla, Itamar and Liu, Xiaolong and Bergeron, Hadallia and Kim, Soo and Wolverton, Christopher and Hersam, Mark C.},
abstractNote = {We report that large-scale synthesis of high-quality two-dimensional (2D) semiconductors is critical for their incorporation in emerging electronic and optoelectronic technologies. In particular, chemical vapor deposition (CVD) of transition-metal dichalcogenides (TMDs) via van der Waals epitaxy on epitaxial graphene (EG) leads to rotationally commensurate TMDs in contrast to randomly aligned TMDs grown on amorphous oxide substrates. However, the interlayer coupling between TMDs and EG hinders the investigation and utilization of the intrinsic electronic properties of the resulting TMDs, thus requiring their isolation from the EG growth substrate. To address this issue, we report here a technique for selectively transferring monolayer molybdenum disulfide (MoS2) from CVD-grown MoS2-EG van der Waals heterojunctions using copper (Cu) adhesion layers. The choice of Cu as the adhesion layer is motivated by density functional theory calculations that predict the preferential binding of monolayer MoS2 to Cu in contrast to graphene. Atomic force microscopy and optical spectroscopy confirm the large-scale transfer of rotationally commensurate MoS2 onto SiO2/Si substrates without cracks, wrinkles, or residues. Furthermore, the transferred MoS2 shows high performance in field-effect transistors with mobilities of up to 30 cm2/V s and on/off ratios of up to 106 at room temperature. Lastly, this transfer technique can likely be generalized to other TMDs and related 2D materials grown on EG, thus offering a broad range of benefits in nanoelectronic, optoelectronic, and photonic applications.},
doi = {10.1021/acs.chemmater.8b03128},
journal = {Chemistry of Materials},
issn = {0897-4756},
number = 23,
volume = 30,
place = {United States},
year = {2018},
month = {11}
}

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