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Title: 10% Efficiency Cu(In,Ga)Se2 Solar Cell with Strongly (220)/(204) Oriented Cu-Poor Absorber Layers Sputtered Using Single Quaternary Target

Abstract

Cu-poor CIGS thin films were fabricated by RF magnetron sputtering from a single quaternary target with the composition of Cu0.7In0.7Ga0.3Se2, in an effort to improve the cell efficiency of CIGS solar cells. The Cu-poor thin films with the ([Cu]/[In]+[Ga]) composition ratios of 0.70-0.77 were obtained showing that the composition of the target can be transferred to the film. It was also observed that the strongly (220)/(204) preferred orientation appeared at the substrate temperatures higher than 600 degrees C, which is known to be essential for achieving high-quality CIGS solar cells. This result indicates that the Cu-Se compounds present in trace amounts of CIGS films hinder the (112) orientation and promotes the growth of the (220) orientation. As a result, the CIGS absorber layer with the Cu-poor composition and the (220)/(204) preferred orientation exhibited a drastically improved cell efficiency of 10.02%.

Authors:
 [1];  [2];  [3];  [4]
  1. Korea Institute of Industrial Technology; Chonnam National University
  2. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
  3. Chonnam National University
  4. Korea Institute of Industrial Technology
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1566056
Report Number(s):
NREL/JA-5K00-74943
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Journal Name:
Journal of Alloys and Compounds
Additional Journal Information:
Journal Volume: 812
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CIGS; quaternary single target; one-step sputtering; Cu-poor composition

Citation Formats

Park, Jae-Cheol, Al-Jassim, Mowafak M, Lee, Byung-Teak, and Kim, Tae-Won. 10% Efficiency Cu(In,Ga)Se2 Solar Cell with Strongly (220)/(204) Oriented Cu-Poor Absorber Layers Sputtered Using Single Quaternary Target. United States: N. p., 2019. Web. doi:10.1016/j.jallcom.2019.152065.
Park, Jae-Cheol, Al-Jassim, Mowafak M, Lee, Byung-Teak, & Kim, Tae-Won. 10% Efficiency Cu(In,Ga)Se2 Solar Cell with Strongly (220)/(204) Oriented Cu-Poor Absorber Layers Sputtered Using Single Quaternary Target. United States. doi:10.1016/j.jallcom.2019.152065.
Park, Jae-Cheol, Al-Jassim, Mowafak M, Lee, Byung-Teak, and Kim, Tae-Won. Wed . "10% Efficiency Cu(In,Ga)Se2 Solar Cell with Strongly (220)/(204) Oriented Cu-Poor Absorber Layers Sputtered Using Single Quaternary Target". United States. doi:10.1016/j.jallcom.2019.152065.
@article{osti_1566056,
title = {10% Efficiency Cu(In,Ga)Se2 Solar Cell with Strongly (220)/(204) Oriented Cu-Poor Absorber Layers Sputtered Using Single Quaternary Target},
author = {Park, Jae-Cheol and Al-Jassim, Mowafak M and Lee, Byung-Teak and Kim, Tae-Won},
abstractNote = {Cu-poor CIGS thin films were fabricated by RF magnetron sputtering from a single quaternary target with the composition of Cu0.7In0.7Ga0.3Se2, in an effort to improve the cell efficiency of CIGS solar cells. The Cu-poor thin films with the ([Cu]/[In]+[Ga]) composition ratios of 0.70-0.77 were obtained showing that the composition of the target can be transferred to the film. It was also observed that the strongly (220)/(204) preferred orientation appeared at the substrate temperatures higher than 600 degrees C, which is known to be essential for achieving high-quality CIGS solar cells. This result indicates that the Cu-Se compounds present in trace amounts of CIGS films hinder the (112) orientation and promotes the growth of the (220) orientation. As a result, the CIGS absorber layer with the Cu-poor composition and the (220)/(204) preferred orientation exhibited a drastically improved cell efficiency of 10.02%.},
doi = {10.1016/j.jallcom.2019.152065},
journal = {Journal of Alloys and Compounds},
number = ,
volume = 812,
place = {United States},
year = {2019},
month = {8}
}