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Title: Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance

Abstract

Environmental exposure of our thin tunneling SiO2 layer on nCz wafer samples prior to poly-Silicon (poly-Si) deposition critically impacts the resulting contact passivation. We present ToF-SIMS evidence of SiO2 oxide storage-induced degradation, presumably by surface contaminants such as carbon, in symmetric and device poly-Si/SiO2 lifetime samples as well as in finished cells. We also present methods to resurrect a contaminated SiO2 layer, including UV-O3 treatment prior to passivated contact formation to produce >21% TCO-free solar cells.

Authors:
 [1]; ORCiD logo [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1566036
Report Number(s):
NREL/CP-5900-74941
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at SiliconPV 2019: The 9th International Conference on Crystalline Silicon Photovoltaics, 8-10 April 2019, Leuven, Belgium
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; chemical elements; semiconductor materials; tunneling SiO2; contact passivation; UV-O3 treatment

Citation Formats

Nemeth, William M, Harvey, Steven P, Young, David L, Page, Matthew, LaSalvia, Vincenzo A, Findley, Dawn, Kale, Abhijit, Theingi, San, and Stradins, Pauls. Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance. United States: N. p., 2019. Web. doi:10.1063/1.5123857.
Nemeth, William M, Harvey, Steven P, Young, David L, Page, Matthew, LaSalvia, Vincenzo A, Findley, Dawn, Kale, Abhijit, Theingi, San, & Stradins, Pauls. Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance. United States. doi:10.1063/1.5123857.
Nemeth, William M, Harvey, Steven P, Young, David L, Page, Matthew, LaSalvia, Vincenzo A, Findley, Dawn, Kale, Abhijit, Theingi, San, and Stradins, Pauls. Tue . "Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance". United States. doi:10.1063/1.5123857.
@article{osti_1566036,
title = {Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance},
author = {Nemeth, William M and Harvey, Steven P and Young, David L and Page, Matthew and LaSalvia, Vincenzo A and Findley, Dawn and Kale, Abhijit and Theingi, San and Stradins, Pauls},
abstractNote = {Environmental exposure of our thin tunneling SiO2 layer on nCz wafer samples prior to poly-Silicon (poly-Si) deposition critically impacts the resulting contact passivation. We present ToF-SIMS evidence of SiO2 oxide storage-induced degradation, presumably by surface contaminants such as carbon, in symmetric and device poly-Si/SiO2 lifetime samples as well as in finished cells. We also present methods to resurrect a contaminated SiO2 layer, including UV-O3 treatment prior to passivated contact formation to produce >21% TCO-free solar cells.},
doi = {10.1063/1.5123857},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {8}
}

Conference:
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