Metal-insulator transition in (111) SrRuO3 ultrathin films

Rastogi, Ankur; Brahlek, Matthew; Ok, Jong Mok; Liao, Zhaoliang; Sohn, Changhee; Feldman, Samuel; Lee, Ho Nyung

doi:10.1063/1.5109374

Title: Metal-insulator transition in (111) SrRuO₃ ultrathin films

Journal Article · Mon Sep 16 00:00:00 EDT 2019 · APL Materials

DOI:https://doi.org/10.1063/1.5109374· OSTI ID:1564205

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Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Univ. of Tennessee, Knoxville, TN (United States)

(111)-oriented transition metal oxide thin films provide a route to developing oxide-based topological quantum materials, but the epitaxial growth is challenging. Here, we present the thickness-dependent electronic and magnetic phase diagrams of coherently strained, phase pure (111)-oriented SrRuO₃ epitaxial films grown on (111) SrTiO₃ substrates using pulsed laser deposition. With decreasing film thickness, it is found that both the metal-to-insulator and magnetic phase transitions occur at the same thickness of 4–5 nm for films grown along both the (111) and the (001) directions. The character of the transport near the metal-insulator transition is, however, distinct for the different directions, which is attributed to the increased electron-electron correlation for (111) SrRuO₃. The results presented here illustrate both the broad challenges as well as the possibilities in modifying correlated materials using dimensional tuning of electronic and magnetic properties.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1564205

Journal Information:: APL Materials, Vol. 7, Issue 9; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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