Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes

Singh, Abhay Pratap; Roccapriore, Kevin; Salloom, Riyadh; Golden, Teresa; Philipose, Usha; Algarni, Zaina

doi:10.3390/nano9091260

Title: Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes

Journal Article · Thu Sep 05 00:00:00 EDT 2019 · Nanomaterials

DOI:https://doi.org/10.3390/nano9091260· OSTI ID:1561613

^[1];

^[2]; Salloom, Riyadh ^[1]; Golden, Teresa ^[3]; Philipose, Usha ^[1]; Algarni, Zaina ^[1]

Univ. of North Texas, Denton, TX (United States)
Univ. of North Texas, Denton, TX (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

A dense array of vertically aligned indium antimonide (InSb) nanowires with high aspect ratio (diameter 150 nm, length 20_μm) were grown in the pores of a track-etched polycarbonate membrane via a one-step electrochemical method. There are several reports on InSb nanowire growth in the pores of a mechanically rigid, nano-channel alumina template (NCA), where nanowire growth occurs in the pores of the NCA. This work on InSb nanowire growth in pores of track-etched polycarbonate (PC) membrane sheds light on the various factors that affect nucleation and nanowire growth. The average length and diameter of the as-grown nanowires was about 10_μm and 150 nm, respectively. Two possible mechanisms accounting for two different morphologies of the as-grown nanowires are proposed. The polycrystallinity observed in some of the nanowires is explained using the 3D ‘nucleation-coalescence’ mechanism. On the other hand, single crystal nanowires with a high density of twin defects and stacking faults grow epitaxially by a two-dimensional (2D) nucleation/growth mechanism. To assess the electrical quality of the nanowires, two- and four-terminal devices were fabricated using a single InSb nanowire contacted by two Ni electrodes. It was found that, at low bias, the ohmic current is controlled by charge diffusion from the bulk contacts. On the other hand, at high bias, the effects of space charge limited current (SCLC) are evident in the current–voltage behavior, characteristic of transport through structures with reduced electrostatic screening. A cross-over from ohmic to SCLC occurs at about 0.14 V, yielding a free carrier concentration of the order of 10¹⁴ cm^-3.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1561613

Journal Information:: Nanomaterials, Vol. 9, Issue 9; ISSN 2079-4991

Publisher:: MDPICopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 5 works

Citation information provided by
Web of Science

References (48)

Nanoelectronics-biology frontier: From nanoscopic probes for action potential recording in live cells to three-dimensional cyborg tissues Duan, Xiaojie; Fu, Tian-Ming; Liu, Jia Nano Today, Vol. 8, Issue 4, p. 351-373 https://doi.org/10.1016/j.nantod.2013.05.001	journal	August 2013
Giant, Level-Dependent g Factors in InSb Nanowire Quantum Dots Nilsson, Henrik A.; Caroff, Philippe; Thelander, Claes Nano Letters, Vol. 9, Issue 9 https://doi.org/10.1021/nl901333a	journal	September 2009
Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions Li, S.; Kang, N.; Fan, D. X. Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep24822	journal	April 2016
Synthesis of Amorphous InSb Nanowires and a Study of the Effects of Laser Radiation and Thermal Annealing on Nanowire Crystallinity Algarni, Zaina; Singh, Abhay; Philipose, Usha Nanomaterials, Vol. 8, Issue 8 https://doi.org/10.3390/nano8080607	journal	August 2018
Templated electrosynthesis of nanomaterials and porous structures Lai, Min; Riley, D. Jason Journal of Colloid and Interface Science, Vol. 323, Issue 2 https://doi.org/10.1016/j.jcis.2008.04.054	journal	July 2008
Nanometre-scale electronics with III–V compound semiconductors del Alamo, Jesús A. Nature, Vol. 479, Issue 7373 https://doi.org/10.1038/nature10677	journal	November 2011
Raman monitoring of semiconductor growth Wagner, V.; Drews, D.; Esser, N. Journal of Applied Physics, Vol. 75, Issue 11 https://doi.org/10.1063/1.356644	journal	June 1994
The Race of Nanowires: Morphological Instabilities and a Control Strategy Shin, Sangwoo; Al-Housseiny, Talal T.; Kim, Beom Seok Nano Letters, Vol. 14, Issue 8 https://doi.org/10.1021/nl501324t	journal	July 2014
Characterization of InSb Nanoparticles Synthesized Using Inert Gas Condensation Pandya, Sneha G.; Kordesch, Martin E. Nanoscale Research Letters, Vol. 10, Issue 1 https://doi.org/10.1186/s11671-015-0966-4	journal	June 2015
Electrodeposition of semiconductors Lincot, Daniel Thin Solid Films, Vol. 487, Issue 1-2 https://doi.org/10.1016/j.tsf.2005.01.032	journal	September 2005
Characterization and properties of micro- and nanowires of controlled size, composition, and geometry fabricated by electrodeposition and ion-track technology Toimil-Molares, Maria Eugenia Beilstein Journal of Nanotechnology, Vol. 3 https://doi.org/10.3762/bjnano.3.97	journal	January 2012
Space-charge-limited current in nanowires Alagha, S.; Shik, A.; Ruda, H. E. Journal of Applied Physics, Vol. 121, Issue 17 https://doi.org/10.1063/1.4982222	journal	May 2017
Room temperature device performance of electrodeposited InSb nanowire field effect transistors Das, Suprem R.; Delker, Collin J.; Zakharov, Dmitri Applied Physics Letters, Vol. 98, Issue 24 https://doi.org/10.1063/1.3587638	journal	June 2011
Infrared detectors: status and trends Rogalski, Antoni Progress in Quantum Electronics, Vol. 27, Issue 2-3, p. 59-210 https://doi.org/10.1016/S0079-6727(02)00024-1	journal	January 2003
Nanostructured thermoelectric materials: Current research and future challenge Chen, Zhi-Gang; Han, Guang; Yang, Lei Progress in Natural Science: Materials International, Vol. 22, Issue 6 https://doi.org/10.1016/j.pnsc.2012.11.011	journal	December 2012
High-performance lithium battery anodes using silicon nanowires Chan, Candace K.; Peng, Hailin; Liu, Gao Nature Nanotechnology, Vol. 3, Issue 1, p. 31-35 https://doi.org/10.1038/nnano.2007.411	journal	December 2007
Enhanced thermoelectric performance of rough silicon nanowires Hochbaum, Allon I.; Chen, Renkun; Delgado, Raul Diaz Nature, Vol. 451, Issue 7175, p. 163-167 https://doi.org/10.1038/nature06381	journal	January 2008
Self-powered nanowire devices Xu, Sheng; Qin, Yong; Xu, Chen Nature Nanotechnology, Vol. 5, Issue 5, p. 366-373 https://doi.org/10.1038/nnano.2010.46	journal	March 2010
Electrochemical fabrication of single-crystalline and polycrystalline Au nanowires: the influence of deposition parameters Liu, J.; Duan, J. L.; Toimil-Molares, M. E. Nanotechnology, Vol. 17, Issue 8 https://doi.org/10.1088/0957-4484/17/8/020	journal	March 2006
Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors Solin, S. A. Science, Vol. 289, Issue 5484 https://doi.org/10.1126/science.289.5484.1530	journal	September 2000
Raman scattering in amorphous Ge and III–V compounds Wihl, M.; Cardona, M.; Tauc, J. Journal of Non-Crystalline Solids, Vol. 8-10 https://doi.org/10.1016/0022-3093(72)90132-9	journal	June 1972
Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks Cui, Yi; Lieber, Charles M. Science, Vol. 291, Issue 5505, p. 851-853 https://doi.org/10.1126/science.291.5505.851	journal	February 2001
Thermoelectric figure of merit and maximum power factor in III–V semiconductor nanowires Mingo, N. Applied Physics Letters, Vol. 84, Issue 14 https://doi.org/10.1063/1.1695629	journal	April 2004
Template-based synthesis of nanorod, nanowire, and nanotube arrays Cao, Guozhong; Liu, Dawei Advances in Colloid and Interface Science, Vol. 136, Issue 1-2, p. 45-64 https://doi.org/10.1016/j.cis.2007.07.003	journal	January 2008
Electrochemical Growth of Single-Crystal Metal Nanowires via a Two-Dimensional Nucleation and Growth Mechanism Tian, Mingliang; Wang, Jinguo; Kurtz, James Nano Letters, Vol. 3, Issue 7 https://doi.org/10.1021/nl034217d	journal	July 2003
Low frequency Raman scattering in amorphous materials: a-Ge, a-InSb, and a-Ge0.5Sn0.5 Lannin, Jeffrey S. Solid State Communications, Vol. 11, Issue 11 https://doi.org/10.1016/0038-1098(72)90513-3	journal	December 1972
Direct Observation of Vapor−Liquid−Solid Nanowire Growth Wu, Yiying; Yang, Peidong Journal of the American Chemical Society, Vol. 123, Issue 13, p. 3165-3166 https://doi.org/10.1021/ja0059084	journal	April 2001
Understanding the Impact of Schottky Barriers on the Performance of Narrow Bandgap Nanowire Field Effect Transistors Zhao, Yanjie; Candebat, Drew; Delker, Collin Nano Letters, Vol. 12, Issue 10 https://doi.org/10.1021/nl302684s	journal	September 2012
Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties Das, Suprem R.; Akatay, Cem; Mohammad, Asaduzzaman Journal of Applied Physics, Vol. 116, Issue 8 https://doi.org/10.1063/1.4893704	journal	August 2014
Growth of nanowire superlattice structures for nanoscale photonics and electronics Gudiksen, Mark S.; Lauhon, Lincoln J.; Wang, Jianfang Nature, Vol. 415, Issue 6872, p. 617-620 https://doi.org/10.1038/415617a	journal	February 2002
An all-in-one nanopore battery array Liu, Chanyuan; Gillette, Eleanor I.; Chen, Xinyi Nature Nanotechnology, Vol. 9, Issue 12 https://doi.org/10.1038/nnano.2014.247	journal	November 2014
Direct Electrodeposition of Highly Dense 50 nm Bi ₂ Te _3- _y Se _y Nanowire Arrays Martín-González, Marisol; Snyder, G. Jeffrey; Prieto, Amy L. Nano Letters, Vol. 3, Issue 7 https://doi.org/10.1021/nl034079s	journal	July 2003
Effect of growth base pressure on the thermoelectric properties of indium antimonide nanowires Zhou, Feng; Moore, Arden L.; Pettes, Michael T. Journal of Physics D: Applied Physics, Vol. 43, Issue 2 https://doi.org/10.1088/0022-3727/43/2/025406	journal	December 2009
Thermal Transport Measurement Techniques for Nanowires and Nanotubes Weathers, Annie; Shi, Li Annual Review of Heat Transfer, Vol. 16, Issue 1 https://doi.org/10.1615/AnnualRevHeatTransfer.v16.40	journal	January 2013
Field effect transistor based on single crystalline InSb nanowire Wang, Yennai; Chi, Junhong; Banerjee, Karan Journal of Materials Chemistry, Vol. 21, Issue 8 https://doi.org/10.1039/c0jm03855e	journal	January 2011
Band parameters for III–V compound semiconductors and their alloys Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R. Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875 https://doi.org/10.1063/1.1368156	journal	June 2001
Fabrication of High-Quality InSb Nanowire Arrays by Chemical Beam Epitaxy Vogel, Alexander T.; de Boor, Johannes; Wittemann, Joerg V. Crystal Growth & Design, Vol. 11, Issue 5 https://doi.org/10.1021/cg200066q	journal	May 2011
Preparation of In X (X = P, As, Sb) Thin Films by Electrochemical Methods Ortega, J. Journal of The Electrochemical Society, Vol. 136, Issue 11 https://doi.org/10.1149/1.2096456	journal	January 1989
Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials Heyns, M.; Tsai, W. MRS Bulletin, Vol. 34, Issue 7 https://doi.org/10.1557/mrs2009.136	journal	July 2009
One-dimensional electron transport and thermopower in an individual InSb nanowire Zhou, F.; Seol, J. H.; Moore, A. L. Journal of Physics: Condensed Matter, Vol. 18, Issue 42 https://doi.org/10.1088/0953-8984/18/42/011	journal	October 2006
Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications Ashley, T.; Buckle, L.; Datta, S. Electronics Letters, Vol. 43, Issue 14 https://doi.org/10.1049/el:20071335	journal	January 2007
Fabrication of Highly Ordered InSb Nanowire Arrays by Electrodeposition in Porous Anodic Alumina Membranes Zhang, Xueru; Hao, Yufeng; Meng, Guowen Journal of The Electrochemical Society, Vol. 152, Issue 10 https://doi.org/10.1149/1.2007187	journal	January 2005
Anomalous Codeposition of Iron Group Metals: I. Experimental Results Zech, N. Journal of The Electrochemical Society, Vol. 146, Issue 8 https://doi.org/10.1149/1.1392024	journal	January 1999
High-performance lithium battery anodes using silicon nanowires Chan, Candace K.; Peng, Hailin; Liu, Gao Materials for Sustainable Energy: A Collection of Peer-Reviewed Research and Review Articles from Nature Publishing Group, p. 187-191 https://doi.org/10.1142/9789814317665_0026	book	October 2010
Room Temperature Device Performance of Electrodeposited InSb Nanowire Field Effect Transistors Das, Suprem R.; Delker, Collin J.; Zakharov, Dmitri arXiv https://doi.org/10.48550/arxiv.1104.5436	text	January 2011
Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions Li, S.; Kang, N.; Fan, D. X. arXiv https://doi.org/10.48550/arxiv.1604.01633	text	January 2016
Second-order Raman scattering in InSb Kiefer, W.; Richter, W.; Cardona, M. Physical Review B, Vol. 12, Issue 6 https://doi.org/10.1103/physrevb.12.2346	journal	September 1975
Raman Scattering from InSb Surfaces at Photon Energies Near the $E_{1}$ Energy Gap Pinczuk, A.; Burstein, E. Physical Review Letters, Vol. 21, Issue 15 https://doi.org/10.1103/physrevlett.21.1073	journal	October 1968