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Title: Silicon Photomultiplier for Medical Imaging -Analysis of SiPM characteristics-

Abstract

This paper proposes an automatic procedure, based on ROOT data Analysis Framework, for the analysis of Silicon Photomultipliers (SiPM) characteristics. In particular, it can be used to analyze experimental waveforms, from oscilloscope, containing SiPM pulses acquired at different temperatures and bias voltages. Important SiPMs characteristics such as: charge distribution, gain, breakdown voltage, pulse shape (rise time and recovery time) and overvoltage can been calculated. Developed procedure can be easily used to analyze any type of SiPM detectors.

Authors:
 [1];  [2];  [3]
  1. Geneva U.
  2. ARTEMIS, Nice
  3. Fermilab
Publication Date:
Research Org.:
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
OSTI Identifier:
1561553
Report Number(s):
arXiv:1907.03926; FERMILAB-PUB-19-385-CD
oai:inspirehep.net:1743024
DOE Contract Number:  
AC02-07CH11359
Resource Type:
Journal Article
Journal Name:
TBD
Additional Journal Information:
Journal Name: TBD
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Nagai, A., Dinu-Jaeger, N., and Para, A. Silicon Photomultiplier for Medical Imaging -Analysis of SiPM characteristics-. United States: N. p., 2019. Web.
Nagai, A., Dinu-Jaeger, N., & Para, A. Silicon Photomultiplier for Medical Imaging -Analysis of SiPM characteristics-. United States.
Nagai, A., Dinu-Jaeger, N., and Para, A. Mon . "Silicon Photomultiplier for Medical Imaging -Analysis of SiPM characteristics-". United States. https://www.osti.gov/servlets/purl/1561553.
@article{osti_1561553,
title = {Silicon Photomultiplier for Medical Imaging -Analysis of SiPM characteristics-},
author = {Nagai, A. and Dinu-Jaeger, N. and Para, A.},
abstractNote = {This paper proposes an automatic procedure, based on ROOT data Analysis Framework, for the analysis of Silicon Photomultipliers (SiPM) characteristics. In particular, it can be used to analyze experimental waveforms, from oscilloscope, containing SiPM pulses acquired at different temperatures and bias voltages. Important SiPMs characteristics such as: charge distribution, gain, breakdown voltage, pulse shape (rise time and recovery time) and overvoltage can been calculated. Developed procedure can be easily used to analyze any type of SiPM detectors.},
doi = {},
journal = {TBD},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {7}
}