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Title: Quantification of Dopant Profiles in SiGe HBT Devices

Abstract

We report on the use of atom probe tomography (APT), scanning transmission electron microscopy (STEM), and secondary ion mass spectroscopy (SIMS) to characterize doping profiles in the base region of SiGe HBT devices. We compare SIMS profiles obtained from large regions (400 um 2 ) of the device wafer to profiles obtained from individual devices of different emitter window widths (0.25 and 0.18 um 2 ) using APT. From this comparison we show how APT can provide a deeper insight into evaluating the fabrication process and its effects on electrical models of device performance and enabling the building of higher performance systems. We also demonstrate that APT can be used to characterize defects within the intrinsic regions of a device.

Authors:
 [1]; ORCiD logo [2]; ORCiD logo [2];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Northrop Grumman Corporation
  2. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1560387
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Conference
Resource Relation:
Conference: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS 2018) - San Diego, California, United States of America - 10/15/2018 8:00:00 AM-10/17/2018 8:00:00 AM
Country of Publication:
United States
Language:
English

Citation Formats

Jones, Eric, Poplawsky, Jonathan D., Leonard, Donovan N., Chung, Keith, Mercurio, Kevin, Brabant, Paul, Adam, Thomas, Shea, Patrick, and Knight, Thomas. Quantification of Dopant Profiles in SiGe HBT Devices. United States: N. p., 2018. Web. doi:10.1109/BCICTS.2018.8551114.
Jones, Eric, Poplawsky, Jonathan D., Leonard, Donovan N., Chung, Keith, Mercurio, Kevin, Brabant, Paul, Adam, Thomas, Shea, Patrick, & Knight, Thomas. Quantification of Dopant Profiles in SiGe HBT Devices. United States. doi:10.1109/BCICTS.2018.8551114.
Jones, Eric, Poplawsky, Jonathan D., Leonard, Donovan N., Chung, Keith, Mercurio, Kevin, Brabant, Paul, Adam, Thomas, Shea, Patrick, and Knight, Thomas. Mon . "Quantification of Dopant Profiles in SiGe HBT Devices". United States. doi:10.1109/BCICTS.2018.8551114. https://www.osti.gov/servlets/purl/1560387.
@article{osti_1560387,
title = {Quantification of Dopant Profiles in SiGe HBT Devices},
author = {Jones, Eric and Poplawsky, Jonathan D. and Leonard, Donovan N. and Chung, Keith and Mercurio, Kevin and Brabant, Paul and Adam, Thomas and Shea, Patrick and Knight, Thomas},
abstractNote = {We report on the use of atom probe tomography (APT), scanning transmission electron microscopy (STEM), and secondary ion mass spectroscopy (SIMS) to characterize doping profiles in the base region of SiGe HBT devices. We compare SIMS profiles obtained from large regions (400 um 2 ) of the device wafer to profiles obtained from individual devices of different emitter window widths (0.25 and 0.18 um 2 ) using APT. From this comparison we show how APT can provide a deeper insight into evaluating the fabrication process and its effects on electrical models of device performance and enabling the building of higher performance systems. We also demonstrate that APT can be used to characterize defects within the intrinsic regions of a device.},
doi = {10.1109/BCICTS.2018.8551114},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {10}
}

Conference:
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