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Title: A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers

Journal Article · · IEEE Transactions on Nuclear Science

The effects of radiation damage in silicon photomultipliers (SiPMs) from gamma rays have been measured and compared with the damage produced by neutrons. Several types of multipixel photon counters from Hamamatsu were exposed to gamma rays and neutrons at the Solid State Gamma Ray Irradiation Facility (SSGRIF) at the Brookhaven National Laboratory and the Institute for Nuclear Research (Atomki) in Debrecen, Hungary. The gamma ray exposures ranged from 1 krad to 1 Mrad and the neutron exposures ranged from 10 8 to 10 12 n/cm 2 . The main effect of gamma ray damage is an increase in the noise and leakage current in the irradiated devices, similar to what is seen from neutron damage, but the level of damage is considerably less at comparable high levels of exposure. In addition, the damage from gamma rays saturates after a few hundred krad, while the damage from neutrons shows no sign of saturation, suggestive of different damage mechanisms in the two cases. The change in optical absorption in the window material of the SiPMs due to radiation was also measured. This paper was carried out in order to evaluate the use of SiPMs for particle physics applications with moderate levels of radiation exposures.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Nuclear Physics (NP); National Research, Development and Innovation Fund of Hungary
Grant/Contract Number:
SC0012704
OSTI ID:
1560008
Report Number(s):
BNL-212053-2019-JAAM; TRN: US2000445
Journal Information:
IEEE Transactions on Nuclear Science, Vol. 66, Issue 7; ISSN 0018-9499
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

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