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Title: Reconstructing the three-dimensional latent image of extreme ultraviolet resists with resonant soft x-ray scattering

Abstract

© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE). Extreme ultraviolet (EUV) lithography is one of the most promising printing techniques for high-volume semiconductor manufacturing at the 14-nm half-pitch device node and beyond. However, key challenges around EUV photoresist materials, such as the exposure-dose sensitivity or the line-width roughness, continue to impede its full adoption into industrial nanofab facilities. Metrology tools are required to address these challenges by helping to assess the impact of the EUV materials' properties and processing conditions along different steps of the nanofabrication process. We apply the resonant soft x-ray scattering (RSoXS) technique to gain insights into the structure of patterned EUV resists before the development step takes place. By using energies around the carbon K-edge to take advantage of small differences in chemistry, the electronic density contrast between the exposed and unexposed regions of the resists could be enhanced in order to image the patterns with subnanometer precision. Critical-dimension grazing-incidence small-angle x-ray scattering is then performed at energies where the contrast is maximized, enabling the reconstruction of the three-dimensional shape of the latent image. We demonstrate the potential of RSoXS to provide a high-resolution height-sensitive profile of patterned EUV resists, which will help in quantifying themore » evolution of critical features, such as the line-edge roughness, at a key step of the nanofabrication process.« less

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [3];  [2]
  1. Lawrence Berkeley National Laboratory, Berkeley, California
  2. Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California
  3. Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1559807
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Journal Article
Journal Name:
Journal of Micro/Nanolithography, MEMS, and MOEMS
Additional Journal Information:
Journal Volume: 18; Journal Issue: 02; Journal ID: ISSN 1932-5150
Country of Publication:
United States
Language:
English

Citation Formats

Freychet, Guillaume, Cordova, Isvar A., McAfee, Terry, Kumar, Dinesh, Pandolfi, Ronald J., Anderson, Chris, Dhuey, Scott D., and Naulleau, Patrick. Reconstructing the three-dimensional latent image of extreme ultraviolet resists with resonant soft x-ray scattering. United States: N. p., 2019. Web. doi:10.1117/1.jmm.18.2.024003.
Freychet, Guillaume, Cordova, Isvar A., McAfee, Terry, Kumar, Dinesh, Pandolfi, Ronald J., Anderson, Chris, Dhuey, Scott D., & Naulleau, Patrick. Reconstructing the three-dimensional latent image of extreme ultraviolet resists with resonant soft x-ray scattering. United States. doi:10.1117/1.jmm.18.2.024003.
Freychet, Guillaume, Cordova, Isvar A., McAfee, Terry, Kumar, Dinesh, Pandolfi, Ronald J., Anderson, Chris, Dhuey, Scott D., and Naulleau, Patrick. Mon . "Reconstructing the three-dimensional latent image of extreme ultraviolet resists with resonant soft x-ray scattering". United States. doi:10.1117/1.jmm.18.2.024003.
@article{osti_1559807,
title = {Reconstructing the three-dimensional latent image of extreme ultraviolet resists with resonant soft x-ray scattering},
author = {Freychet, Guillaume and Cordova, Isvar A. and McAfee, Terry and Kumar, Dinesh and Pandolfi, Ronald J. and Anderson, Chris and Dhuey, Scott D. and Naulleau, Patrick},
abstractNote = {© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE). Extreme ultraviolet (EUV) lithography is one of the most promising printing techniques for high-volume semiconductor manufacturing at the 14-nm half-pitch device node and beyond. However, key challenges around EUV photoresist materials, such as the exposure-dose sensitivity or the line-width roughness, continue to impede its full adoption into industrial nanofab facilities. Metrology tools are required to address these challenges by helping to assess the impact of the EUV materials' properties and processing conditions along different steps of the nanofabrication process. We apply the resonant soft x-ray scattering (RSoXS) technique to gain insights into the structure of patterned EUV resists before the development step takes place. By using energies around the carbon K-edge to take advantage of small differences in chemistry, the electronic density contrast between the exposed and unexposed regions of the resists could be enhanced in order to image the patterns with subnanometer precision. Critical-dimension grazing-incidence small-angle x-ray scattering is then performed at energies where the contrast is maximized, enabling the reconstruction of the three-dimensional shape of the latent image. We demonstrate the potential of RSoXS to provide a high-resolution height-sensitive profile of patterned EUV resists, which will help in quantifying the evolution of critical features, such as the line-edge roughness, at a key step of the nanofabrication process.},
doi = {10.1117/1.jmm.18.2.024003},
journal = {Journal of Micro/Nanolithography, MEMS, and MOEMS},
issn = {1932-5150},
number = 02,
volume = 18,
place = {United States},
year = {2019},
month = {4}
}

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