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Title: Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

Journal Article · · IEEE Transactions on Semiconductor Manufacturing
 [1];  [1];  [2];  [2];  [2];  [2];  [2];  [2];  [2];  [3]
  1. Univ. of Florida, Gainesville, FL (United States). Dept. of Chemical Engineering
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
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High Aluminum content channel (Al0.85Ga0.15N/Al-0.7Ga0.3N) High Electron Mobility Transistors (HEMTs) were operated from room temperature to 500°C in ambient. The devices exhibited only moderate reduction, 58%, in on-state forward current. Gate lag measurements at 100 kHz and 10% duty only showed a slight reduction in pulsed current from DC at 500°C and high gate voltages. Interfacial trap densities were 2 × 1011 over the range 25-300°C and 3 × 1012 cm-2 from 300-500°C from the subthreshold swing. These low interfacial trap densities and the near ideal gate lag measurement indicate high-quality epi layers. The insulating properties of the barrier layer led to low gate induced drain leakage current of ~10-12 A/mm and ~10-8 A/mm at 25 and 500°C, respectively. Low leakage current was enabled by the high Schottky barrier of the Ni/Au gate, 1.1 eV and 3.3 eV at 25 and 500°C, respectively. These properties of the AlGaN channel HEMTs demonstrate their potential for high power and high temperature operation.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1559515
Report Number(s):
SAND2019-9482J; 678448
Journal Information:
IEEE Transactions on Semiconductor Manufacturing, Journal Name: IEEE Transactions on Semiconductor Manufacturing; ISSN 0894-6507
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 13 works
Citation information provided by
Web of Science

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36 MATERIALS SCIENCE