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Title: Front/Back Poly-Si/SiO2 Passivated Contact Device with Voc > 720 mV

Abstract

We report on front/back poly-Si/SiO2 passivated contact solar cells with iVoc > 735 mV and Voc > 720 mV. The devices were grown on n-Cz wafers using PECVD to deposit doped a-Si layers which were then annealed at 850 degrees C. Our best device has an efficiency of 21% which is limited by: (1) low current density from a large grid shadow loss and parasitic absorption in the front poly-Si:P layer; and (2) high series resistance from a high Al-poly-Si:P contact resistivity. We discuss the role of high temperature anneals throughout the process flow to preserve and improve the bulk lifetime of the n-Cz wafers.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1558345
Report Number(s):
NREL/CP-5900-72446
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 35th European Photovoltaic Solar Energy Conference and Exhibition, 24-27 September 2018, Brussels, Belgium
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; solar cells; passivate contacts; Tabula Rasa

Citation Formats

Young, David L, LaSalvia, Vincenzo A, Nemeth, William M, Theingi, San, Kale, Abhijit, Findley, Dawn, Atkins, Scott J, Page, Matthew, and Stradins, Pauls. Front/Back Poly-Si/SiO2 Passivated Contact Device with Voc > 720 mV. United States: N. p., 2018. Web. doi:https://dx.doi.org/10.4229/35thEUPVSEC20182018-2AV.3.32.
Young, David L, LaSalvia, Vincenzo A, Nemeth, William M, Theingi, San, Kale, Abhijit, Findley, Dawn, Atkins, Scott J, Page, Matthew, & Stradins, Pauls. Front/Back Poly-Si/SiO2 Passivated Contact Device with Voc > 720 mV. United States. doi:https://dx.doi.org/10.4229/35thEUPVSEC20182018-2AV.3.32.
Young, David L, LaSalvia, Vincenzo A, Nemeth, William M, Theingi, San, Kale, Abhijit, Findley, Dawn, Atkins, Scott J, Page, Matthew, and Stradins, Pauls. Thu . "Front/Back Poly-Si/SiO2 Passivated Contact Device with Voc > 720 mV". United States. doi:https://dx.doi.org/10.4229/35thEUPVSEC20182018-2AV.3.32.
@article{osti_1558345,
title = {Front/Back Poly-Si/SiO2 Passivated Contact Device with Voc > 720 mV},
author = {Young, David L and LaSalvia, Vincenzo A and Nemeth, William M and Theingi, San and Kale, Abhijit and Findley, Dawn and Atkins, Scott J and Page, Matthew and Stradins, Pauls},
abstractNote = {We report on front/back poly-Si/SiO2 passivated contact solar cells with iVoc > 735 mV and Voc > 720 mV. The devices were grown on n-Cz wafers using PECVD to deposit doped a-Si layers which were then annealed at 850 degrees C. Our best device has an efficiency of 21% which is limited by: (1) low current density from a large grid shadow loss and parasitic absorption in the front poly-Si:P layer; and (2) high series resistance from a high Al-poly-Si:P contact resistivity. We discuss the role of high temperature anneals throughout the process flow to preserve and improve the bulk lifetime of the n-Cz wafers.},
doi = {https://dx.doi.org/10.4229/35thEUPVSEC20182018-2AV.3.32},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {9}
}

Conference:
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