Absorption Enhancement in InGaAsP/InGaP Quantum Well Solar Cells
Abstract
InGaAsP/InGaP quantum well (QW) structure is a potential candidate for subcells in next-generation multijunction solar cells because of its tunable bandgap (1.5-1.8 eV). However, the insufficient light absorption in the QWs has previously limited the sub-bandgap quantum efficiency (QE) to less than 25%. We report on the development of InGaAsP/InGaP superlattice solar cell with improved sub-bandgap QE exceeding 75% and bandgap-voltage offset of 0.40 V. The enhancements were accomplished by reducing the background doping in the QW region, monitoring the stress evolution during growth, modifying the QW design to grow thicker wells and processing the devices with optical reflector to enhance light absorption.
- Authors:
-
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- North Carolina State University
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1558344
- Report Number(s):
- NREL/CP-5900-68863
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Conference
- Resource Relation:
- Conference: Presented at the 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 25-30 June 2017, Washington, D.C.
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 42 ENGINEERING; bandgap engineering; InGaAs; InGaP; quantum wells; III-V; solar cells
Citation Formats
Sayed, Islam, Jain, Nikhil, Steiner, Myles A, Geisz, John F, and Bedair, Salah M. Absorption Enhancement in InGaAsP/InGaP Quantum Well Solar Cells. United States: N. p., 2018.
Web. doi:10.1109/PVSC.2017.8366528.
Sayed, Islam, Jain, Nikhil, Steiner, Myles A, Geisz, John F, & Bedair, Salah M. Absorption Enhancement in InGaAsP/InGaP Quantum Well Solar Cells. United States. https://doi.org/10.1109/PVSC.2017.8366528
Sayed, Islam, Jain, Nikhil, Steiner, Myles A, Geisz, John F, and Bedair, Salah M. 2018.
"Absorption Enhancement in InGaAsP/InGaP Quantum Well Solar Cells". United States. https://doi.org/10.1109/PVSC.2017.8366528.
@article{osti_1558344,
title = {Absorption Enhancement in InGaAsP/InGaP Quantum Well Solar Cells},
author = {Sayed, Islam and Jain, Nikhil and Steiner, Myles A and Geisz, John F and Bedair, Salah M.},
abstractNote = {InGaAsP/InGaP quantum well (QW) structure is a potential candidate for subcells in next-generation multijunction solar cells because of its tunable bandgap (1.5-1.8 eV). However, the insufficient light absorption in the QWs has previously limited the sub-bandgap quantum efficiency (QE) to less than 25%. We report on the development of InGaAsP/InGaP superlattice solar cell with improved sub-bandgap QE exceeding 75% and bandgap-voltage offset of 0.40 V. The enhancements were accomplished by reducing the background doping in the QW region, monitoring the stress evolution during growth, modifying the QW design to grow thicker wells and processing the devices with optical reflector to enhance light absorption.},
doi = {10.1109/PVSC.2017.8366528},
url = {https://www.osti.gov/biblio/1558344},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Nov 05 00:00:00 EST 2018},
month = {Mon Nov 05 00:00:00 EST 2018}
}
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