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Title: Absorption Enhancement in InGaAsP/InGaP Quantum Well Solar Cells

Abstract

InGaAsP/InGaP quantum well (QW) structure is a potential candidate for subcells in next-generation multijunction solar cells because of its tunable bandgap (1.5-1.8 eV). However, the insufficient light absorption in the QWs has previously limited the sub-bandgap quantum efficiency (QE) to less than 25%. We report on the development of InGaAsP/InGaP superlattice solar cell with improved sub-bandgap QE exceeding 75% and bandgap-voltage offset of 0.40 V. The enhancements were accomplished by reducing the background doping in the QW region, monitoring the stress evolution during growth, modifying the QW design to grow thicker wells and processing the devices with optical reflector to enhance light absorption.

Authors:
 [1];  [1]; ORCiD logo [1];  [1];  [2]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
  2. North Carolina State University
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1558344
Report Number(s):
NREL/CP-5900-68863
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 25-30 June 2017, Washington, D.C.
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 42 ENGINEERING; bandgap engineering; InGaAs; InGaP; quantum wells; III-V; solar cells

Citation Formats

Sayed, Islam, Jain, Nikhil, Steiner, Myles A, Geisz, John F, and Bedair, Salah M. Absorption Enhancement in InGaAsP/InGaP Quantum Well Solar Cells. United States: N. p., 2018. Web. doi:10.1109/PVSC.2017.8366528.
Sayed, Islam, Jain, Nikhil, Steiner, Myles A, Geisz, John F, & Bedair, Salah M. Absorption Enhancement in InGaAsP/InGaP Quantum Well Solar Cells. United States. https://doi.org/10.1109/PVSC.2017.8366528
Sayed, Islam, Jain, Nikhil, Steiner, Myles A, Geisz, John F, and Bedair, Salah M. 2018. "Absorption Enhancement in InGaAsP/InGaP Quantum Well Solar Cells". United States. https://doi.org/10.1109/PVSC.2017.8366528.
@article{osti_1558344,
title = {Absorption Enhancement in InGaAsP/InGaP Quantum Well Solar Cells},
author = {Sayed, Islam and Jain, Nikhil and Steiner, Myles A and Geisz, John F and Bedair, Salah M.},
abstractNote = {InGaAsP/InGaP quantum well (QW) structure is a potential candidate for subcells in next-generation multijunction solar cells because of its tunable bandgap (1.5-1.8 eV). However, the insufficient light absorption in the QWs has previously limited the sub-bandgap quantum efficiency (QE) to less than 25%. We report on the development of InGaAsP/InGaP superlattice solar cell with improved sub-bandgap QE exceeding 75% and bandgap-voltage offset of 0.40 V. The enhancements were accomplished by reducing the background doping in the QW region, monitoring the stress evolution during growth, modifying the QW design to grow thicker wells and processing the devices with optical reflector to enhance light absorption.},
doi = {10.1109/PVSC.2017.8366528},
url = {https://www.osti.gov/biblio/1558344}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Nov 05 00:00:00 EST 2018},
month = {Mon Nov 05 00:00:00 EST 2018}
}

Conference:
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