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Title: Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

Abstract

Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1–unit cell (UC) limit. The ferroelectric transition temperature T c of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature. The interplay between semiconducting properties and ferroelectricity in this two-dimensional material may enable a wide range of applications in nonvolatile high-density memories, nanosensors, and electronics.

Authors:
 [1];  [2];  [1];  [1];  [1];  [3];  [3];  [1];  [1];  [1];  [4];  [5];  [1];  [1];  [6]
  1. Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)
  2. Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  3. Renmin Univ. of China, Beijing (China)
  4. Renmin Univ. of China, Beijing (China); Collaborative Innovation Center of Advanced Microstructures, Shanghai (China)
  5. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  6. Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Inst. of Physical and Chemical Research (RIKEN), Wako (Japan)
Publication Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1557590
Grant/Contract Number:  
SC0010526
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Science
Additional Journal Information:
Journal Volume: 353; Journal Issue: 6296; Journal ID: ISSN 0036-8075
Publisher:
AAAS
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Chang, Kai, Liu, Junwei, Lin, Haicheng, Wang, Na, Zhao, Kun, Zhang, Anmin, Jin, Feng, Zhong, Yong, Hu, Xiaopeng, Duan, Wenhui, Zhang, Qingming, Fu, Liang, Xue, Qi-Kun, Chen, Xi, and Ji, Shuai-Hua. Discovery of robust in-plane ferroelectricity in atomic-thick SnTe. United States: N. p., 2016. Web. doi:10.1126/science.aad8609.
Chang, Kai, Liu, Junwei, Lin, Haicheng, Wang, Na, Zhao, Kun, Zhang, Anmin, Jin, Feng, Zhong, Yong, Hu, Xiaopeng, Duan, Wenhui, Zhang, Qingming, Fu, Liang, Xue, Qi-Kun, Chen, Xi, & Ji, Shuai-Hua. Discovery of robust in-plane ferroelectricity in atomic-thick SnTe. United States. doi:10.1126/science.aad8609.
Chang, Kai, Liu, Junwei, Lin, Haicheng, Wang, Na, Zhao, Kun, Zhang, Anmin, Jin, Feng, Zhong, Yong, Hu, Xiaopeng, Duan, Wenhui, Zhang, Qingming, Fu, Liang, Xue, Qi-Kun, Chen, Xi, and Ji, Shuai-Hua. Fri . "Discovery of robust in-plane ferroelectricity in atomic-thick SnTe". United States. doi:10.1126/science.aad8609. https://www.osti.gov/servlets/purl/1557590.
@article{osti_1557590,
title = {Discovery of robust in-plane ferroelectricity in atomic-thick SnTe},
author = {Chang, Kai and Liu, Junwei and Lin, Haicheng and Wang, Na and Zhao, Kun and Zhang, Anmin and Jin, Feng and Zhong, Yong and Hu, Xiaopeng and Duan, Wenhui and Zhang, Qingming and Fu, Liang and Xue, Qi-Kun and Chen, Xi and Ji, Shuai-Hua},
abstractNote = {Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1–unit cell (UC) limit. The ferroelectric transition temperature Tc of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature. The interplay between semiconducting properties and ferroelectricity in this two-dimensional material may enable a wide range of applications in nonvolatile high-density memories, nanosensors, and electronics.},
doi = {10.1126/science.aad8609},
journal = {Science},
issn = {0036-8075},
number = 6296,
volume = 353,
place = {United States},
year = {2016},
month = {7}
}

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Cited by: 200 works
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