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Title: Asymptotic Behavior of Memristive Circuits

Abstract

The interest in memristors has risen due to their possible application both as memory units and as computational devices in combination with CMOS. This is in part due to their nonlinear dynamics, and a strong dependence on the circuit topology. We provide evidence that also purely memristive circuits can be employed for computational purposes. In the present paper we show that a polynomial Lyapunov function in the memory parameters exists for the case of DC controlled memristors. Such a Lyapunov function can be asymptotically approximated with binary variables, and mapped to quadratic combinatorial optimization problems. This also shows a direct parallel between memristive circuits and the Hopfield-Little model. In the case of Erdos-Renyi random circuits, we show numerically that the distribution of the matrix elements of the projectors can be roughly approximated with a Gaussian distribution, and that it scales with the inverse square root of the number of elements. This provides an approximated but direct connection with the physics of disordered system and, in particular, of mean field spin glasses. Using this and the fact that the interaction is controlled by a projector operator on the loop space of the circuit. We estimate the number of stationary points ofmore » the approximate Lyapunov function and provide a scaling formula as an upper bound in terms of the circuit topology only.« less

Authors:
Publication Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1557331
Alternate Identifier(s):
OSTI ID: 1558046
Report Number(s):
LA-UR-18-24748
Journal ID: ISSN 1099-4300; ENTRFG; PII: e21080789
Grant/Contract Number:  
AC52-06NA25396; 89233218CNA000001
Resource Type:
Journal Article: Published Article
Journal Name:
Entropy
Additional Journal Information:
Journal Name: Entropy Journal Volume: 21 Journal Issue: 8; Journal ID: ISSN 1099-4300
Publisher:
MDPI
Country of Publication:
Switzerland
Language:
English
Subject:
97 MATHEMATICS AND COMPUTING; memristive circuits; spin models; disordered systems

Citation Formats

Caravelli, Francesco. Asymptotic Behavior of Memristive Circuits. Switzerland: N. p., 2019. Web. doi:10.3390/e21080789.
Caravelli, Francesco. Asymptotic Behavior of Memristive Circuits. Switzerland. https://doi.org/10.3390/e21080789
Caravelli, Francesco. 2019. "Asymptotic Behavior of Memristive Circuits". Switzerland. https://doi.org/10.3390/e21080789.
@article{osti_1557331,
title = {Asymptotic Behavior of Memristive Circuits},
author = {Caravelli, Francesco},
abstractNote = {The interest in memristors has risen due to their possible application both as memory units and as computational devices in combination with CMOS. This is in part due to their nonlinear dynamics, and a strong dependence on the circuit topology. We provide evidence that also purely memristive circuits can be employed for computational purposes. In the present paper we show that a polynomial Lyapunov function in the memory parameters exists for the case of DC controlled memristors. Such a Lyapunov function can be asymptotically approximated with binary variables, and mapped to quadratic combinatorial optimization problems. This also shows a direct parallel between memristive circuits and the Hopfield-Little model. In the case of Erdos-Renyi random circuits, we show numerically that the distribution of the matrix elements of the projectors can be roughly approximated with a Gaussian distribution, and that it scales with the inverse square root of the number of elements. This provides an approximated but direct connection with the physics of disordered system and, in particular, of mean field spin glasses. Using this and the fact that the interaction is controlled by a projector operator on the loop space of the circuit. We estimate the number of stationary points of the approximate Lyapunov function and provide a scaling formula as an upper bound in terms of the circuit topology only.},
doi = {10.3390/e21080789},
url = {https://www.osti.gov/biblio/1557331}, journal = {Entropy},
issn = {1099-4300},
number = 8,
volume = 21,
place = {Switzerland},
year = {Thu Aug 01 00:00:00 EDT 2019},
month = {Thu Aug 01 00:00:00 EDT 2019}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at https://doi.org/10.3390/e21080789

Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

Figures / Tables:

Figure 1 Figure 1: Dynamics of the memory is shown in Figure (a) and the corresponding evolution of the Lyapunov function of Equation (A1) ((b), continuous line) for 8750 memristors and for the asymptotic function of Equation (6) Figure ((b)-dashed line). We considered α = 0.1, β = 1 and ξ =more » 10, for Ωij from a random circuit of the Erdos-Renyi type with p = 0.9. The sources $$\vec{S}$$’s elements were chosen at random between [−0.05, 0.05].« less

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.