skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Charge collection in irradiated HV-CMOS detectors

Abstract

Active silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has to be evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities in the range of 20-1000 Omega cm were irradiated with neutrons and protons up to a fluence of 2 x 10(15) n(eq) cm(-2) and 3.6 x 10(15) n(eq) cm(-2). Charge collection in passive test structures on the chip was evaluated using Edge-TCT and minimum ionising electrons from Sr-90. Results were used to assess radiation hardness of the detector in the given fluence range and to determine parameters of initial acceptor removal in different substrates.

Authors:
; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
Slovenian Research Agency (ARRS); European Union - Horizon 2020 Research and Innovation Programme
OSTI Identifier:
1557248
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Additional Journal Information:
Journal Volume: 924
Country of Publication:
United States
Language:
English
Subject:
LHC upgrade; active silicon detectors; charge collection efficiency

Citation Formats

Hiti, B., Affolder, A, Arndt, K., Bates, R., Benoit, M., Di Bello, F., Blue, A., Bortoletto, D., Buckland, M., Buttar, C., Wang, R., and Zhang, J. Charge collection in irradiated HV-CMOS detectors. United States: N. p., 2019. Web. doi:10.1016/j.nima.2018.07.022.
Hiti, B., Affolder, A, Arndt, K., Bates, R., Benoit, M., Di Bello, F., Blue, A., Bortoletto, D., Buckland, M., Buttar, C., Wang, R., & Zhang, J. Charge collection in irradiated HV-CMOS detectors. United States. doi:10.1016/j.nima.2018.07.022.
Hiti, B., Affolder, A, Arndt, K., Bates, R., Benoit, M., Di Bello, F., Blue, A., Bortoletto, D., Buckland, M., Buttar, C., Wang, R., and Zhang, J. Sun . "Charge collection in irradiated HV-CMOS detectors". United States. doi:10.1016/j.nima.2018.07.022.
@article{osti_1557248,
title = {Charge collection in irradiated HV-CMOS detectors},
author = {Hiti, B. and Affolder, A and Arndt, K. and Bates, R. and Benoit, M. and Di Bello, F. and Blue, A. and Bortoletto, D. and Buckland, M. and Buttar, C. and Wang, R. and Zhang, J.},
abstractNote = {Active silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has to be evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities in the range of 20-1000 Omega cm were irradiated with neutrons and protons up to a fluence of 2 x 10(15) n(eq) cm(-2) and 3.6 x 10(15) n(eq) cm(-2). Charge collection in passive test structures on the chip was evaluated using Edge-TCT and minimum ionising electrons from Sr-90. Results were used to assess radiation hardness of the detector in the given fluence range and to determine parameters of initial acceptor removal in different substrates.},
doi = {10.1016/j.nima.2018.07.022},
journal = {Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment},
number = ,
volume = 924,
place = {United States},
year = {2019},
month = {4}
}