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Title: Protection of GaInP2 Photocathodes by Direct Photoelectrodeposition of MoSx Thin Films

Abstract

Catalytic MoSx thin films have been directly photoelectrodeposited on GaInP2 photocathodes for stable photoelectrochemical hydrogen generation. Specifically, the MoSx deposition conditions were controlled to obtain 8-10 nm films directly on p-GaInP2 substrates without ancillary protective layers. The films were nominally composed of MoS2, with additional MoOxSy and MoO3 species detected and showed no long-range crystalline order. The as-deposited material showed excellent catalytic activity toward the hydrogen evolution reaction relative to bare p-GaInP2. Notably, no appreciable photocurrent reduction was incurred by the addition of the photoelectrodeposited MoSx catalyst to the GaInP2 photocathode under light-limited operating conditions, highlighting the advantageous optical properties of the film. The MoSx catalyst also imparted enhanced durability toward photoelectrochemical hydrogen evolution in acidic conditions, maintaining nearly 85% of the initial photocurrent after 50 h of electrolysis. In total, this work demonstrates a simple method for producing dual-function catalyst/protective layers directly on high-performance, planar III-V photoelectrodes for photoelectrochemical energy conversion.

Authors:
 [1]; ORCiD logo [2];  [2];  [1];  [1];  [2]; ORCiD logo [2]; ORCiD logo [2];  [1]
  1. University of Michigan
  2. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Fuel Cell Technologies Office (EE-3F); USDOE Office of Science (SC), Office of Workforce Development for Teachers and Scientists
OSTI Identifier:
1548261
Report Number(s):
NREL/JA-5900-74260
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Journal Name:
ACS Applied Materials & Interfaces
Additional Journal Information:
Journal Volume: 11; Journal Issue: 28
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; photoelectrodeposition; III-V semiconductor; MoSx; water-splitting; durabilty

Citation Formats

Lancaster, Mitchell, Mow, Rachel, Liu, Jun, Cheek, Quintin, MacInnes, Molly M., Al-Jassim, Mowafak M, Deutsch, Todd G, Young, James, and Maldonado, Stephen. Protection of GaInP2 Photocathodes by Direct Photoelectrodeposition of MoSx Thin Films. United States: N. p., 2019. Web. doi:10.1021/acsami.9b03742.
Lancaster, Mitchell, Mow, Rachel, Liu, Jun, Cheek, Quintin, MacInnes, Molly M., Al-Jassim, Mowafak M, Deutsch, Todd G, Young, James, & Maldonado, Stephen. Protection of GaInP2 Photocathodes by Direct Photoelectrodeposition of MoSx Thin Films. United States. doi:10.1021/acsami.9b03742.
Lancaster, Mitchell, Mow, Rachel, Liu, Jun, Cheek, Quintin, MacInnes, Molly M., Al-Jassim, Mowafak M, Deutsch, Todd G, Young, James, and Maldonado, Stephen. Tue . "Protection of GaInP2 Photocathodes by Direct Photoelectrodeposition of MoSx Thin Films". United States. doi:10.1021/acsami.9b03742.
@article{osti_1548261,
title = {Protection of GaInP2 Photocathodes by Direct Photoelectrodeposition of MoSx Thin Films},
author = {Lancaster, Mitchell and Mow, Rachel and Liu, Jun and Cheek, Quintin and MacInnes, Molly M. and Al-Jassim, Mowafak M and Deutsch, Todd G and Young, James and Maldonado, Stephen},
abstractNote = {Catalytic MoSx thin films have been directly photoelectrodeposited on GaInP2 photocathodes for stable photoelectrochemical hydrogen generation. Specifically, the MoSx deposition conditions were controlled to obtain 8-10 nm films directly on p-GaInP2 substrates without ancillary protective layers. The films were nominally composed of MoS2, with additional MoOxSy and MoO3 species detected and showed no long-range crystalline order. The as-deposited material showed excellent catalytic activity toward the hydrogen evolution reaction relative to bare p-GaInP2. Notably, no appreciable photocurrent reduction was incurred by the addition of the photoelectrodeposited MoSx catalyst to the GaInP2 photocathode under light-limited operating conditions, highlighting the advantageous optical properties of the film. The MoSx catalyst also imparted enhanced durability toward photoelectrochemical hydrogen evolution in acidic conditions, maintaining nearly 85% of the initial photocurrent after 50 h of electrolysis. In total, this work demonstrates a simple method for producing dual-function catalyst/protective layers directly on high-performance, planar III-V photoelectrodes for photoelectrochemical energy conversion.},
doi = {10.1021/acsami.9b03742},
journal = {ACS Applied Materials & Interfaces},
number = 28,
volume = 11,
place = {United States},
year = {2019},
month = {6}
}